Proximity-Inset Fed Triple Band Antenna for Global Position System with High Gain

A triple band circularly polarized antenna covering 1.17, 1.22, and 1.57 GHz is presented. To extend to the triple-band operation, we need to add one more ring while maintaining the mechanism to independently control each ring. The inset-part in the feeding scheme is used to excite the band at 1.22 GHz, while the proximate-part of the feeding scheme is used to excite not only the band at 1.57 GHz but also the band at 1.17 GHz. This is achieved by up-vertically coupled with one ring to radiate at 1.57 GHz and down-vertically coupled another ring to radiate at 1.17 GHz. It is also noted that the inset-part in our feeding scheme is by horizontal coupling. Furthermore, to increase the gain at all three bands, three air-layers are added to make the total height of the antenna be 7.8 mm. The total thickness of the three air-layers is 3 mm. The gains of the three bands are all greater than 5 dBiC after adding the air-layers.

Design of a CMOS Differential Operational Transresistance Amplifier in 90 nm CMOS Technology

In this paper, a CMOS differential operational transresistance amplifier (OTRA) is presented. The amplifier is designed and implemented in a standard umc90-nm CMOS technology. The differential OTRA provides wider bandwidth at high gain. It also shows much better rise and fall time and exhibits a very good input current dynamic range of 50 to 50 μA. The OTRA can be used in many analog VLSI applications. The presented amplifier has high gain bandwidth product of 617.6 THz Ω. The total power dissipation of the presented amplifier is also very low and it is 0.21 mW.