Abstract: A novel method to produce a fast high voltage solid
states switch using Insulated Gate Bipolar Transistors (IGBTs) is
presented for discharge-pumped gas lasers. The IGBTs are connected
in series to achieve a high voltage rating. An avalanche transistor is
used as the gate driver. The fast pulse generated by the avalanche
transistor quickly charges the large input capacitance of the IGBT,
resulting in a switch out of a fast high-voltage pulse. The switching
characteristic of fast-high voltage solid state switch has been estimated
in the multi-stage series-connected IGBT with the applied voltage of
several tens of kV. Electrical circuit diagram and the mythology of
fast-high voltage solid state switch as well as experimental results
obtained are presented.
Abstract: The charge-pump circuit is an important component in a phase-locked loop (PLL). The charge-pump converts Up and Down signals from the phase/frequency detector (PFD) into current. A conventional CMOS charge-pump circuit consists of two switched current sources that pump charge into or out of the loop filter according to two logical inputs. The mismatch between the charging current and the discharging current causes phase offset and reference spurs in a PLL. We propose a new charge-pump circuit to reduce the current mismatch by using a regulated cascode circuit. The proposed charge-pump circuit is designed and simulated by spectre with TSMC 0.18-μm 1.8-V CMOS technology.