Abstract: We consider fluctuations of defects density taking into account their interaction. Stochastic field of displacement generation rate gives random defect distribution. We determinate statistical characteristics (mean and dispersion) of random field of point defect distribution as function of defect generation parameters, temperature and properties of irradiated crystal.
Abstract: Irradiated material is a typical example of a complex
system with nonlinear coupling between its elements. During
irradiation the radiation damage is developed and this development
has bifurcations and qualitatively different kinds of behavior.
The accumulation of primary defects in irradiated crystals is
considered in frame work of nonlinear evolution of complex system.
The thermo-concentration nonlinear feedback is carried out as a
mechanism of self-oscillation development.
It is shown that there are two ways of the defect density evolution
under stationary irradiation. The first is the accumulation of defects;
defect density monotonically grows and tends to its stationary state
for some system parameters. Another way that takes place for
opportune parameters is the development of self-oscillations of the
defect density.
The stationary state, its stability and type are found. The
bifurcation values of parameters (environment temperature, defect
generation rate, etc.) are obtained. The frequency of the selfoscillation
and the conditions of their development is found and
rated. It is shown that defect density, heat fluxes and temperature
during self-oscillations can reach much higher values than the
expected steady-state values. It can lead to a change of typical
operation and an accident, e.g. for nuclear equipment.