Abstract: Electrical conduction in a quasi-one-dimensional
polycrystalline metallic ring with a long electron phase coherence
length realized at low temperature is investigated. In this situation, the
wave nature of electrons is important in the ring, where the electrical
current I can be induced by a vector potential that arises from a static
magnetic field applied perpendicularly to the ring’s area. It is shown
that if the average grain size of the polycrystalline ring becomes
large (or comparable to the Fermi wavelength), the electrical current
I increases to ~I0, where I0 is a current in a disorder-free ring. The
cause of this increasing effect is examined, and this takes place if the
electron localization length in the polycrystalline potential increases
with increasing grain size, which gives rise to coherent connection
of tails of a localized electron wave function in the ring and thus
provides highly coherent electrical conduction.
Abstract: Dielectric ceramic samples in the BaO-Re2O3-TiO2
ternary system were synthesized with structural formula Ba2-
xRe4+2x/3Ti8O24 where Re= rare earth metal and Re= Sm and La where
x varies from 0.0 to 0.6 with step size 0.1. Polycrystalline samples
were prepared by the conventional solid state reaction technique. The
dielectric, electrical and impedance analysis of all the samples in the
frequency range 1KHz- 1MHz at room temperature (25°C) have been
done to get the understanding of electrical conduction and dielectric
relaxation and their correlation. Dielectric response of the samples at
lower frequencies shows dielectric dispersion while at higher
frequencies it shows dielectric relaxation. The ac conductivity is well
fitted by the Jonscher law. The spectroscopic data in the impedance
plane confirms the existence of grain contribution to the relaxation.
All the properties are found out to be function of frequency as well as
the amount of substitution.
Abstract: Resistive switching of aluminum nitride (AlNx) thin film was demonstrated in a TaN/AlNx/TiN memory cell that was prepared by sputter deposition techniques. The memory cell showed bipolar switching of resistance between +3.5 V and –3.5 V. The resistance ratio of high resistance state (HRS) to low resistance state (HRS), RHRS/RLRS, was about 2 over 100 cycles of endurance test. Both the LRS and HRS of the memory cell exhibited ohmic conduction at low voltages and Poole-Frenkel emission at high voltages. The electrical conduction in the TaN/AlNx/TiN memory cell was possibly attributed to the interactions between charges and defects in the AlNx film.