Abstract: This paper presents a design of a wireless read out system for tracking the frequency shift of the polymer coated piezoelectric micro electromechanical resonator due to gas absorption. The measure of this frequency shift indicates the percentage of a particular gas the sensor is exposed to. It is measured using an oscillator and an FPGA based frequency counter by employing the resonator as a frequency determining element in the oscillator. This system consists of a Gas Sensing Wireless Readout (GSWR) and an USB Wireless Transceiver (UWT). GSWR consists of an oscillator based on a trans-impedance sustaining amplifier, an FPGA based frequency readout, a sub 1GHz wireless transceiver and a micro controller. UWT can be plugged into the computer via USB port and function as a wireless module to transfer gas sensor data from GSWR to the computer through its USB port. GUI program running on the computer periodically polls for sensor data through UWT - GSWR wireless link, the response from GSWR is logged in a file for post processing as well as displayed on screen.
Abstract: In this paper, the design of wide-swing constant transconductance (gm) bias circuit that generates bias voltage for low-noise amplifier (LNA) circuit design by using an off-chip resistor is demonstrated. The overall transconductance (Gm) generated by the constant gm bias circuit is important to maintain the overall gain and noise figure of the LNA circuit. Therefore, investigation is performed to study the variation in Gm with process, temperature and supply voltage (PVT). Temperature and supply voltage are swept from -10 °C to 85 °C and 1.425 V to 1.575 V respectively, while the process conditions are also varied to the extreme and the gm variation is eventually concluded at between -3 % to 7 %. With the slight variation in the gm value, through simulation, at worst condition of state SS, we are able to attain a conversion gain (S21) variation of -3.10 % and a noise figure (NF) variation of 18.71 %. The whole constant gm circuit draws approximately 100 µA from a 1.5V supply and is designed based on 0.13 µm CMOS process.