Abstract: In this work, the physical based device model of
AlGaN/GaN high electron mobility transistors (HEMTs) has been
established and the corresponding device operation behavior has
been investigated also by using Sentaurus TCAD from Synopsys.
Advanced AlGaN/GaN hetero-structures with GaN cap layer and AlN
spacer have been considered and the GaN cap layer and AlN spacer
are found taking important roles on the gate leakage blocking and
off-state breakdown voltage enhancement.