Abstract: In this paper a new method for increasing the speed of
SAGCM-APD is proposed. Utilizing carrier rate equations in
different regions of the structure, a circuit model for the structure is
obtained. In this research, in addition to frequency response, the
effect of added new charge layer on some transient parameters like
slew-rate, rising and falling times have been considered. Finally, by
trading-off among some physical parameters such as different layers
widths and droppings, a noticeable decrease in breakdown voltage
has been achieved. The results of simulation, illustrate some features
of proposed structure improvement in comparison with conventional
SAGCM-APD structures.