Abstract: In this paper, we present and investigate a double gate PN diode based tunnel field effect transistor (DGPNTFET). The importance of proposed structure is that the formation of different drain doping is not required and ambipolar effect in OFF state is completely removed for this structure. Validation of this structure to behave like a Tunnel Field Effect Transistor (TFET) is carried out through energy band diagrams and transfer characteristics. Simulated result shows point subthreshold slope (SS) of 19.14 mV/decade and ON to OFF current ratio (ION / IOFF) of 2.66 × 1014 (ION at VGS=1.5V, VDS=1V and IOFF at VGS=0V, VDS=1V) for gate length of 20nm and HfO2 as gate oxide at room temperature. Which indicate that the DGPNTFET is a promising candidate for nano-scale, ambipolar free switch.
Abstract: In order to manufacture short gap single Si nanowire
(NW) field effect transistor (FET) by imprinting and transferring
method, we introduce the method using Al2O3 sacrificial layer. The
diameters of cylindrical Si NW addressed between Au electrodes by
dielectrophoretic (DEP) alignment method are controlled to 106, 128,
and 148 nm. After imprinting and transfer process, cylindrical Si NW
is embedded in PVP adhesive and dielectric layer. By curing
transferred cylindrical Si NW and Au electrodes on PVP-coated p++ Si
substrate with 200nm-thick SiO2, 3μm gap Si NW FET fabrication
was completed. As the diameter of embedded Si NW increases, the
mobility of FET increases from 80.51 to 121.24 cm2/V·s and the
threshold voltage moves from –7.17 to –2.44 V because the ratio of
surface to volume gets reduced.