This paper presents ageing experiments controlled by the evolution of junction parameters. The deterioration of the device is related to high injection effects which modified the transport mechanisms in the space charge region of the junction. Physical phenomena linked to the degradation of junction parameters that affect the devices reliability are reported and discussed. We have used the method based on numerical analysis of experimental current-voltage characteristic of the junction, in order to extract the electrical parameters. The simultaneous follow-up of the evolutions of the series resistance and of the transition voltage allow us to introduce a new parameter for reliability evaluation.
[1] D. Schmitt-Landsiedel, and C. Werner, "Innovative devices for
integrated circuits- A design perspective", Solid-State Electronics, Vol.
53, 2009, pp. 411-417.
[2] D.M. Fleetwood, M.P. Rodgers, L.Tsetseris, X.J. Zhou, I.Batyrev, S.
Wang, R.D.Schrimpf, and S.T. Pantelides, "Effects of device aging on
microelectronics radiation response and reliability",
Microelectron.Reliab, Vol. 47, 2007, pp. 1075-1085.
[3] D.M.Fleetwood, "Effects of hydrogen transport and reactions on
microelectronics radiation response and reliability",
Microelectron.Reliab, Vol. 42, 2002, pp. 523-541.
[4] L.Le Bras, M.Bendada, P. Mialhe, E.Blampain and J.PCharles,
"Recombination via radiative induced defects in field effect transistor",
J.Appl.Phys, Vol. 76, 1984, pp. 5676-80.
[5] E.Ben.dada, M. De la Bardonnie, P. Mialhe and J.P.Charles, "Diode
ideality factor for MOSFETS characterization of dose effect",
Radiat.Eff. Defects Solids, Vol. 138, 1996, pp 39-48.
[6] D.M. Fleetwood, S.L.Kosier, R.N. Nowlin, R.D. Schrimpf, R.A. Reber,
M.Delaus, P.S.Winokur, A. Wei, W.E.Combs, and R.L.Pease, " Physical
mechanisms contributing to enhanced bipolar gain degradation at low
dose rates", IEEE Trans.Nucl. Sci, Vol.41, 1994, pp. 1871-83.
[7] C.Salamé, P. Mialhe, J.P. Charles and A. Khoury, "N-Channel power
MOSFET for fast neutron detection", Microelectron. Int, Vol.19, 2002,
pp. 19-22.
[8] H.P.Hjalmarson, R.L. Pease, C.E. Hembree, R.M. Van Ginhoven, and
P.A. Schultz, "Dose rate dependence of radiation induced interface trap
density in Silicon bipolar transistor",Nucl.Instrum. Methods.Phys.Rev B,
Vol. 250, 2006 pp. 269-273.
[9] C.Picard, C.Brisset, A. Hoffman, J.P. Charles, F. Joffre, L. Adams, and
H.A. Siedle, "Use of electrical stress and isochronal annealing on power
MOSFETs in order to characterise the effects of Co60 irradiation",
Microelectron. Reliab, Vol. 40, 2000, pp. 1647-1652.
[10] G.Wenping, , C.Chi, , D.Huantao, , H.Yue, , Z.Jincheng, W.Chong, ,
F.Qian, , and M.Xiaohua, , " 60Co ╬│-rays irradiation effect in DC
performance of AlGaN/GaN high electron mobility transistors.", J.
Semiconductors, Vol. 30, 2009, pp. 1-5.
[11] W. Tazibt, P.Mialhe, J.P. Charles, and M.A. Belkhir, "A junction
characterization for microelectronic devices quality and reliability",
Microelectron.Reliab, Vol. 48, 2008, pp. 348-353.
[12] C.Ma, B.Li, Y.Wei, L. Zhang, J. He, X.Zhang, X.Lin, and M. Chan,
"FinFET reliability study by forward gated-diode generation-
recombination current", semicond.Sci.Technol, Vol. 23, 2008, pp.1-8.
[13] N.Toufik, , F.Pélanchon, and P.Mialhe, , "Degradation of junction
parameters of an electrically stressed npn bipolar transistor", Active and
Passive Elec. Comp, Vol. 24, 2001, pp. 155-163.
[14] C.Salamé, R.Habchi, W.Tazibt, A.Khoury, and P.Mialhe, "A faster
power MOSFET device with electrical stress treatment",
Microelectron.Int, Vol. 22, 2005, pp. 35-41.
[15] S.L. Kosier, A.Wei, R.D. Schrimpf, D.M.Fleetwood, M.D.Delaus, R.L.
Pease, and W.E.Combs, "Physically based comparison of hot-carrier
induced and ionising radiation induced degradation in BJT-s", IEEE
Trans.Electron. Dev, Vol. 42, 1995, pp. 436-444.
[16] S.Gerardina, A. Griffonia, A., Cestera, A.Paccagnellaa, and G. Ghidinib,
"Degradation of static and dynamic behaviour of CMOS inverters during
constant and pulsed voltage stress" Microelectron. Reliab, Vol. 46,
2006, pp. 1669-1672.
[17] L.J.Tang, K.L. Pey, C.H.Tung, R.Ranjanand W.H.Lin, "Study of
breakdown in ultrathin gate dielectrics using constant voltage stress and
successive constant voltage stress", Microelectron. Eng, Vol. 80, 2005,
pp. 170-173.
[18] S.Doyle, B.D.Krakauer, R.Mistry, "Examination of oxide damage
during high current stress of n-MOS transistors", IEEE Trans. Electron.
Dev, Vol. 40, 1993, pp. 980-985.
[19] Gao, G., Wang, J., Yap, A. and Li, H., (2009), "Two-stage hot-carrier
degradation behavior of 0.18 ╬╝m 18 V n-type DEMOS and its recovery
effect", Microelectron. Reliab, Vol. 49, pp. 8-12.
[20] S.Y.Park, C.Floresca, U.Chowdhury, J.L. Jimenez, C.Lee, E. Beam,
P.Saunier, , T.Balestreri, and M.J.Kim, "Physical degradation of GaN
HEMT devices under high drain bias reliability testing", Microelectron.
Reliab, Vol. 49, 2009, pp. 478-483.
[21] Y.Wen, C.and Basaran, "An analytical model for thermal stress analysis
of multi-layered microelectronics packaging"; Mech. Mater, Vol. 36,
2004, pp.369-385.
[22] A.Tarakji, X.Hu, A.Koudymov, G.Simin, J.Yang, M.A.Khan,
M.S.Shur, and R.Gaska, , "DC and microwave performance of a
GaN/AlGaN MOSHFET under high temperature stress", Solid-State
Electronics, Vol. 46, 2002, pp. 1211-1214.
[23] Z.Benamara, B.Akkal, A.Talbi, and B.Gruzza, "Electrical transport
characteristics of Au/n-GaN Schottky diodes", Mater Sci. Eng C, Vol.
26, 2006, pp. 519-522.
[24] T.Grasser, B. Kaczer, , W.Goes, T.Aichinger, P.Hehenberger, and
M.Nelhiebel, "Understanding negative bias temperature instability in the
context of hole trapping", Microelectron.Eng, Vol. 86, 2009, pp. 1876-
1882.
[25] L.G. Crespo, D.P.Giesy, and S.P. Kenny, "Reliability-based analysis and
design via failure domain bounding", Structural Safety, Vol. 31, 2009,
pp. 306-315.
[26] J.R. Gonzalez, M.Vazquez, N.Nunez, C.Algora, I.Rey-Stolle, and
B.Galliana, "Reliability analysis of temperature step-stress tests on III-V
high concentrator solar cells", Microelectron. Reliab, Vol. 49, 2009, pp.
673-680.
[27] D.Cheng, D. Zhu, R.P. Broadwater and S.Lee, "A graph trace based
reliability analysis of electric power systems with time-varying loads
and dependent failures", Electr.power Syst.Res, Vol. 79, 2009, pp. 1321-
1328.
[28] A.Naess, B.J. Leira, and O. Batsevych, "System reliability analysis by
enhanced Monte Carlo simulation", Structural Safety, Vol. 31,2009, pp.
349-355.
[29] W.J.Plumbridge, "New avenues for failure analysis", Engineering
Failure Analyses, Vol. 16, 2009, pp. 1347-1354.
[30] D.M.Fleetwood, "Hydrogen-related reliability issues for advanced
microelectronics", Microelectron.Reliab, ", Vol. 42, 2002, pp. 1397-
1403.
[31] S.T.Pantelides, L.Tsetseris, S.N. Rashkeev, X.J.Zhou, D.M. Fleetwood,
and R.D.Schrimpf, "Hydrogen in MOSFETs - A primary agent of
reliability issues", Microelectron.Reliab, Vol. 47, 2007, pp. 903-911.
[32] L.Vendrame, P.Pavan, G.Corva, A.Nardi, A.Neviani, and E.Zanoni, ,
"Degradation mechanisms in polysilicon emitter bipolar junction
transistors for digital applications", ,Microelectron.Reliab, Vol. 40,
2000, pp. 207-230.
[33] M.Borgarino, R.Menozzi, D.Dieci, L.Cattani, and F.Fantini, "Reliability
physics of compound semiconductor transistors for microwave
applications", Microelectron.Reliab, Vol. 41, 2001, pp. 21-30.
[34] J.P.Charles, I.Mekkaoui-Alaoui, G.Bordure, and P.Mialhe, "A critical
study of the effectiveness of the single and double exponential models",
Solid-State Electronics, Vol. 28, 1985, pp. 807- 820.
[35] P.A .Basore, "Numerical modeling of textured silicon solar cells using
PC-1D", IEEE Transactions On Electron Devices, Vol. 37, 1990, pp.
337-343.
[36] M.El-Tahchi, A.Khoury, M.De La Bardonnie, , P.Mialhe, and
F.Pelanchon, "Degradation of the diode ideality factor of silicon n-p
junctions", Solar Energy Material and Solar Cells, Vol. 62, 2000, pp.
1957-1979.
[37] N.Toufik, F.Pélanchon, and P.Mialhe, "Degradation of junction
parameters of an electrically stressed npn bipolar transistor", Active and
Passive Elec.Comp, Vol. 24, 2001, pp. 155-163.
[38] M.El-Tahchi, N.Toufik, F.Pelonchon, M.Ajaka, A.Khoury, and
P.Mialhe, "New modelling method for forward junction I-V analysis",
J.Phys D: Appl. Phys, Vol. 35, 2002, pp. 487-491.
[39] S.M. Sze, Physics of Semiconductor Devices, John & Sons, New York,
NY, 1981.
[40] X.Zhixiong, Z. Jiang, W.Tongli, L.Yao, and W.Mingwang, "Analysis of
the high injection effects in silicon bipolar transistors at low
temperatures", Solid-State Electronics, Vol. 38, 1995 pp. 1455-1460.
[41] A.Gendron, P.Renaud, M.Bafleur, and N.Nolhier, "Analytical
description of the injection ratio of self-biased bipolar transistors under
the very high injection conditions of ESD events", Solid-State
Electronics, Vol. 52, 2008, pp. 663-674.
[42] L.D. Edmonds, "High-level injection in n+-p junction silicon devices",
J.App.Phys, Vol. 97, 2005, pp. 1-7.
[1] D. Schmitt-Landsiedel, and C. Werner, "Innovative devices for
integrated circuits- A design perspective", Solid-State Electronics, Vol.
53, 2009, pp. 411-417.
[2] D.M. Fleetwood, M.P. Rodgers, L.Tsetseris, X.J. Zhou, I.Batyrev, S.
Wang, R.D.Schrimpf, and S.T. Pantelides, "Effects of device aging on
microelectronics radiation response and reliability",
Microelectron.Reliab, Vol. 47, 2007, pp. 1075-1085.
[3] D.M.Fleetwood, "Effects of hydrogen transport and reactions on
microelectronics radiation response and reliability",
Microelectron.Reliab, Vol. 42, 2002, pp. 523-541.
[4] L.Le Bras, M.Bendada, P. Mialhe, E.Blampain and J.PCharles,
"Recombination via radiative induced defects in field effect transistor",
J.Appl.Phys, Vol. 76, 1984, pp. 5676-80.
[5] E.Ben.dada, M. De la Bardonnie, P. Mialhe and J.P.Charles, "Diode
ideality factor for MOSFETS characterization of dose effect",
Radiat.Eff. Defects Solids, Vol. 138, 1996, pp 39-48.
[6] D.M. Fleetwood, S.L.Kosier, R.N. Nowlin, R.D. Schrimpf, R.A. Reber,
M.Delaus, P.S.Winokur, A. Wei, W.E.Combs, and R.L.Pease, " Physical
mechanisms contributing to enhanced bipolar gain degradation at low
dose rates", IEEE Trans.Nucl. Sci, Vol.41, 1994, pp. 1871-83.
[7] C.Salamé, P. Mialhe, J.P. Charles and A. Khoury, "N-Channel power
MOSFET for fast neutron detection", Microelectron. Int, Vol.19, 2002,
pp. 19-22.
[8] H.P.Hjalmarson, R.L. Pease, C.E. Hembree, R.M. Van Ginhoven, and
P.A. Schultz, "Dose rate dependence of radiation induced interface trap
density in Silicon bipolar transistor",Nucl.Instrum. Methods.Phys.Rev B,
Vol. 250, 2006 pp. 269-273.
[9] C.Picard, C.Brisset, A. Hoffman, J.P. Charles, F. Joffre, L. Adams, and
H.A. Siedle, "Use of electrical stress and isochronal annealing on power
MOSFETs in order to characterise the effects of Co60 irradiation",
Microelectron. Reliab, Vol. 40, 2000, pp. 1647-1652.
[10] G.Wenping, , C.Chi, , D.Huantao, , H.Yue, , Z.Jincheng, W.Chong, ,
F.Qian, , and M.Xiaohua, , " 60Co ╬│-rays irradiation effect in DC
performance of AlGaN/GaN high electron mobility transistors.", J.
Semiconductors, Vol. 30, 2009, pp. 1-5.
[11] W. Tazibt, P.Mialhe, J.P. Charles, and M.A. Belkhir, "A junction
characterization for microelectronic devices quality and reliability",
Microelectron.Reliab, Vol. 48, 2008, pp. 348-353.
[12] C.Ma, B.Li, Y.Wei, L. Zhang, J. He, X.Zhang, X.Lin, and M. Chan,
"FinFET reliability study by forward gated-diode generation-
recombination current", semicond.Sci.Technol, Vol. 23, 2008, pp.1-8.
[13] N.Toufik, , F.Pélanchon, and P.Mialhe, , "Degradation of junction
parameters of an electrically stressed npn bipolar transistor", Active and
Passive Elec. Comp, Vol. 24, 2001, pp. 155-163.
[14] C.Salamé, R.Habchi, W.Tazibt, A.Khoury, and P.Mialhe, "A faster
power MOSFET device with electrical stress treatment",
Microelectron.Int, Vol. 22, 2005, pp. 35-41.
[15] S.L. Kosier, A.Wei, R.D. Schrimpf, D.M.Fleetwood, M.D.Delaus, R.L.
Pease, and W.E.Combs, "Physically based comparison of hot-carrier
induced and ionising radiation induced degradation in BJT-s", IEEE
Trans.Electron. Dev, Vol. 42, 1995, pp. 436-444.
[16] S.Gerardina, A. Griffonia, A., Cestera, A.Paccagnellaa, and G. Ghidinib,
"Degradation of static and dynamic behaviour of CMOS inverters during
constant and pulsed voltage stress" Microelectron. Reliab, Vol. 46,
2006, pp. 1669-1672.
[17] L.J.Tang, K.L. Pey, C.H.Tung, R.Ranjanand W.H.Lin, "Study of
breakdown in ultrathin gate dielectrics using constant voltage stress and
successive constant voltage stress", Microelectron. Eng, Vol. 80, 2005,
pp. 170-173.
[18] S.Doyle, B.D.Krakauer, R.Mistry, "Examination of oxide damage
during high current stress of n-MOS transistors", IEEE Trans. Electron.
Dev, Vol. 40, 1993, pp. 980-985.
[19] Gao, G., Wang, J., Yap, A. and Li, H., (2009), "Two-stage hot-carrier
degradation behavior of 0.18 ╬╝m 18 V n-type DEMOS and its recovery
effect", Microelectron. Reliab, Vol. 49, pp. 8-12.
[20] S.Y.Park, C.Floresca, U.Chowdhury, J.L. Jimenez, C.Lee, E. Beam,
P.Saunier, , T.Balestreri, and M.J.Kim, "Physical degradation of GaN
HEMT devices under high drain bias reliability testing", Microelectron.
Reliab, Vol. 49, 2009, pp. 478-483.
[21] Y.Wen, C.and Basaran, "An analytical model for thermal stress analysis
of multi-layered microelectronics packaging"; Mech. Mater, Vol. 36,
2004, pp.369-385.
[22] A.Tarakji, X.Hu, A.Koudymov, G.Simin, J.Yang, M.A.Khan,
M.S.Shur, and R.Gaska, , "DC and microwave performance of a
GaN/AlGaN MOSHFET under high temperature stress", Solid-State
Electronics, Vol. 46, 2002, pp. 1211-1214.
[23] Z.Benamara, B.Akkal, A.Talbi, and B.Gruzza, "Electrical transport
characteristics of Au/n-GaN Schottky diodes", Mater Sci. Eng C, Vol.
26, 2006, pp. 519-522.
[24] T.Grasser, B. Kaczer, , W.Goes, T.Aichinger, P.Hehenberger, and
M.Nelhiebel, "Understanding negative bias temperature instability in the
context of hole trapping", Microelectron.Eng, Vol. 86, 2009, pp. 1876-
1882.
[25] L.G. Crespo, D.P.Giesy, and S.P. Kenny, "Reliability-based analysis and
design via failure domain bounding", Structural Safety, Vol. 31, 2009,
pp. 306-315.
[26] J.R. Gonzalez, M.Vazquez, N.Nunez, C.Algora, I.Rey-Stolle, and
B.Galliana, "Reliability analysis of temperature step-stress tests on III-V
high concentrator solar cells", Microelectron. Reliab, Vol. 49, 2009, pp.
673-680.
[27] D.Cheng, D. Zhu, R.P. Broadwater and S.Lee, "A graph trace based
reliability analysis of electric power systems with time-varying loads
and dependent failures", Electr.power Syst.Res, Vol. 79, 2009, pp. 1321-
1328.
[28] A.Naess, B.J. Leira, and O. Batsevych, "System reliability analysis by
enhanced Monte Carlo simulation", Structural Safety, Vol. 31,2009, pp.
349-355.
[29] W.J.Plumbridge, "New avenues for failure analysis", Engineering
Failure Analyses, Vol. 16, 2009, pp. 1347-1354.
[30] D.M.Fleetwood, "Hydrogen-related reliability issues for advanced
microelectronics", Microelectron.Reliab, ", Vol. 42, 2002, pp. 1397-
1403.
[31] S.T.Pantelides, L.Tsetseris, S.N. Rashkeev, X.J.Zhou, D.M. Fleetwood,
and R.D.Schrimpf, "Hydrogen in MOSFETs - A primary agent of
reliability issues", Microelectron.Reliab, Vol. 47, 2007, pp. 903-911.
[32] L.Vendrame, P.Pavan, G.Corva, A.Nardi, A.Neviani, and E.Zanoni, ,
"Degradation mechanisms in polysilicon emitter bipolar junction
transistors for digital applications", ,Microelectron.Reliab, Vol. 40,
2000, pp. 207-230.
[33] M.Borgarino, R.Menozzi, D.Dieci, L.Cattani, and F.Fantini, "Reliability
physics of compound semiconductor transistors for microwave
applications", Microelectron.Reliab, Vol. 41, 2001, pp. 21-30.
[34] J.P.Charles, I.Mekkaoui-Alaoui, G.Bordure, and P.Mialhe, "A critical
study of the effectiveness of the single and double exponential models",
Solid-State Electronics, Vol. 28, 1985, pp. 807- 820.
[35] P.A .Basore, "Numerical modeling of textured silicon solar cells using
PC-1D", IEEE Transactions On Electron Devices, Vol. 37, 1990, pp.
337-343.
[36] M.El-Tahchi, A.Khoury, M.De La Bardonnie, , P.Mialhe, and
F.Pelanchon, "Degradation of the diode ideality factor of silicon n-p
junctions", Solar Energy Material and Solar Cells, Vol. 62, 2000, pp.
1957-1979.
[37] N.Toufik, F.Pélanchon, and P.Mialhe, "Degradation of junction
parameters of an electrically stressed npn bipolar transistor", Active and
Passive Elec.Comp, Vol. 24, 2001, pp. 155-163.
[38] M.El-Tahchi, N.Toufik, F.Pelonchon, M.Ajaka, A.Khoury, and
P.Mialhe, "New modelling method for forward junction I-V analysis",
J.Phys D: Appl. Phys, Vol. 35, 2002, pp. 487-491.
[39] S.M. Sze, Physics of Semiconductor Devices, John & Sons, New York,
NY, 1981.
[40] X.Zhixiong, Z. Jiang, W.Tongli, L.Yao, and W.Mingwang, "Analysis of
the high injection effects in silicon bipolar transistors at low
temperatures", Solid-State Electronics, Vol. 38, 1995 pp. 1455-1460.
[41] A.Gendron, P.Renaud, M.Bafleur, and N.Nolhier, "Analytical
description of the injection ratio of self-biased bipolar transistors under
the very high injection conditions of ESD events", Solid-State
Electronics, Vol. 52, 2008, pp. 663-674.
[42] L.D. Edmonds, "High-level injection in n+-p junction silicon devices",
J.App.Phys, Vol. 97, 2005, pp. 1-7.
@article{"International Journal of Engineering, Mathematical and Physical Sciences:52259", author = "Tazibt W. and Mialhe P.", title = "Physical Parameters for Reliability Evaluation", abstract = "This paper presents ageing experiments controlled by the evolution of junction parameters. The deterioration of the device is related to high injection effects which modified the transport mechanisms in the space charge region of the junction. Physical phenomena linked to the degradation of junction parameters that affect the devices reliability are reported and discussed. We have used the method based on numerical analysis of experimental current-voltage characteristic of the junction, in order to extract the electrical parameters. The simultaneous follow-up of the evolutions of the series resistance and of the transition voltage allow us to introduce a new parameter for reliability evaluation.
", keywords = "High injection, junction, parameters, reliability", volume = "5", number = "11", pages = "1674-5", }
