Identification of States and Events for the Static and Dynamic Simulation of Single Electron Tunneling Circuits
The implementation of single-electron tunneling
(SET) simulators based on the master-equation (ME) formalism
requires the efficient and accurate identification of an exhaustive list
of active states and related tunnel events. Dynamic simulations also
require the control of the emerging states and guarantee the safe
elimination of decaying states. This paper describes algorithms for
use in the stationary and dynamic control of the lists of active states
and events. The paper presents results obtained using these
algorithms with different SET structures.
[1] K. Likharev, "Correlated discrete transfer of single electrons in ultrasmall
tunnel junctions", IBM J. Res. & Dev. Vol (32),1, pp. 144-158,
1988
[2] S. Gustavsson et. al. "Electrons in quantum dots: One by one", J.
Applied Physics, 105, 122401, 2009.
[3] P. Heshfield, J. Davies, P. Hydgaard, C. Stanton & J. Wilkinson, "Zerofrequency
current noise for the double tunnel junction Coulomb
blockade", Phys Rev B, 47 (4), pp. 1967-1979, 1992.
[4] L. Fonseca, A. N. Korotkov and K. Likharev, "SENECA: a New
Program for the Analysis of Single-Electron Devices", VLSI Design,
Vol. 6, Nos. (1--4), pp. 57-60, 1998.
[5] V. Nguyen and V. Nguyena, "Shot noise in metallic double dot
structures with a negative differential conductance", Appl. Phys Lett, 87,
123107, 2005.
[6] C. Wasshuber, H. Kosina & S. Selberherr, "SIMON-A simulator for
single-electron tunnel devices and circuits", IEEE Trans. Computer-
Aided Design of Integrated Circuits and Systems, 6 (9), 937-944, 2002.
[7] Y. S. Yu, J. H. OH, S. W. Hwang, and D. Ahn, "Implementation of
Single Electron Circuit", Simulation by PSPICE: KOSEC SPICE," IEIC
Technical Report vol. 100, no. 150, pp. 85-90, 2000.
[8] G. Zardalidis, and I. G. Karafyllidis, "SECS: A New Single-Electron-
Circuit Simulator,", IEEE Transactions on Circuits and Systems - I, vol.
55, no. 9, pp. 2774-2784, 2008.
[9] S. Amakawa1 et. al, "Single-electron logic based on multiple-tunnel
junctions", in Mesoscopic Tunneling Devices, ed. H. Nakashima, 2004.
[10] J. Bylander, T. Duty and P. Delsing, "LineWidths of Single-Electron
Tunneling Oscillations: Experiment and Numerical Simulations", 24th
International Conference on Low Temperature Physics - LT24. AIP
Conference Proceedings, Volume 850, pp. 1442-1443 (2006).
[11] S. Babiker, "Simulation of single-electron transport in nanostructured
quantum dots", IEEE Trans. On Electron Devices, vol. 52, no. 3, pp.
392-396, 2005.
[1] K. Likharev, "Correlated discrete transfer of single electrons in ultrasmall
tunnel junctions", IBM J. Res. & Dev. Vol (32),1, pp. 144-158,
1988
[2] S. Gustavsson et. al. "Electrons in quantum dots: One by one", J.
Applied Physics, 105, 122401, 2009.
[3] P. Heshfield, J. Davies, P. Hydgaard, C. Stanton & J. Wilkinson, "Zerofrequency
current noise for the double tunnel junction Coulomb
blockade", Phys Rev B, 47 (4), pp. 1967-1979, 1992.
[4] L. Fonseca, A. N. Korotkov and K. Likharev, "SENECA: a New
Program for the Analysis of Single-Electron Devices", VLSI Design,
Vol. 6, Nos. (1--4), pp. 57-60, 1998.
[5] V. Nguyen and V. Nguyena, "Shot noise in metallic double dot
structures with a negative differential conductance", Appl. Phys Lett, 87,
123107, 2005.
[6] C. Wasshuber, H. Kosina & S. Selberherr, "SIMON-A simulator for
single-electron tunnel devices and circuits", IEEE Trans. Computer-
Aided Design of Integrated Circuits and Systems, 6 (9), 937-944, 2002.
[7] Y. S. Yu, J. H. OH, S. W. Hwang, and D. Ahn, "Implementation of
Single Electron Circuit", Simulation by PSPICE: KOSEC SPICE," IEIC
Technical Report vol. 100, no. 150, pp. 85-90, 2000.
[8] G. Zardalidis, and I. G. Karafyllidis, "SECS: A New Single-Electron-
Circuit Simulator,", IEEE Transactions on Circuits and Systems - I, vol.
55, no. 9, pp. 2774-2784, 2008.
[9] S. Amakawa1 et. al, "Single-electron logic based on multiple-tunnel
junctions", in Mesoscopic Tunneling Devices, ed. H. Nakashima, 2004.
[10] J. Bylander, T. Duty and P. Delsing, "LineWidths of Single-Electron
Tunneling Oscillations: Experiment and Numerical Simulations", 24th
International Conference on Low Temperature Physics - LT24. AIP
Conference Proceedings, Volume 850, pp. 1442-1443 (2006).
[11] S. Babiker, "Simulation of single-electron transport in nanostructured
quantum dots", IEEE Trans. On Electron Devices, vol. 52, no. 3, pp.
392-396, 2005.
@article{"International Journal of Engineering, Mathematical and Physical Sciences:59375", author = "Sharief F. Babiker and Abdelkareem Bedri and Rania Naeem", title = "Identification of States and Events for the Static and Dynamic Simulation of Single Electron Tunneling Circuits", abstract = "The implementation of single-electron tunneling
(SET) simulators based on the master-equation (ME) formalism
requires the efficient and accurate identification of an exhaustive list
of active states and related tunnel events. Dynamic simulations also
require the control of the emerging states and guarantee the safe
elimination of decaying states. This paper describes algorithms for
use in the stationary and dynamic control of the lists of active states
and events. The paper presents results obtained using these
algorithms with different SET structures.", keywords = "Active state, Coulomb blockade, Master Equation,
Single electron devices", volume = "5", number = "12", pages = "2033-5", }