Effect of Non Uniformity Factors and Assignment Factors on Errors in Charge Simulation Method with Point Charge Model
Charge Simulation Method (CSM) is one of the very widely used numerical field computation technique in High Voltage (HV) engineering. The high voltage fields of varying non uniformities are encountered in practice. CSM programs being case specific, the simulation accuracies heavily depend on the user (programmers) experience. Here is an effort to understand CSM errors and evolve some guidelines to setup accurate CSM models, relating non uniformities with assignment factors. The results are for the six-point-charge model of sphere-plane gap geometry. Using genetic algorithm (GA) as tool, optimum assignment factors at different non uniformity factors for this model have been evaluated and analyzed. It is shown that the symmetrically placed six-point-charge models can be good enough to set up CSM programs with potential errors less than 0.1% when the field non uniformity factor is greater than 2.64 (field utilization factor less than 52.76%).
[1] H Singer, H. Steinbigler P. Weiss, "A change simulation method for the
calculation of high voltage fields", IEEE trans, PAS vol.93, 1974,
pp1660-68.
[2] Nazar H Malik, "A review of the charge simulation method and its
application", IEEE Transaction on electrical insulation, Vol.24, No.1,
1989, pp. 1-20.
[3] S. Chakravorty, "Charge Simulation Method: a critical overview", Ie (I)
journal-el, Vol. 78, March 1998, pp. 210-214.
[4] E. Kuffel, W.S.Zeangle & J.Kuffel, "High Voltage Engineering
fundamentals", Newnes, An imprint of Butterworth-Heinemann, A
division of Reed Educational and Publishing Ltd, Woburn, MA. 2000,
pp.254-269.
[5] H Anis, A Zeitoun, M El-Ragheb m and El-Desouki, "Field calculations
Around Non-Standard Electrodes Using Regression and Their Spherical
Equivalence", IEEE Trans on PAS, Vol.PAS-96, no.6, November-
December 1977, pp.1721-1730.
[6] A Yializis, E.Kuffel, P H Alexander, "An Optimized Charge Simulation
Method for the Calculation of High Voltage fields", IEEE Transaction
on PAS-97, 1978, pp. 2434-40.
[7] Y L Chow and C Charalambous, "Static-field computation by method of
optimized simulated images", Proc. IEE, Vol.126, No.1, 1979, pp.123-
125.
[8] M R Iravani, M R Raghuveer, "Accurate Field Solution in the Entire
Inter electrode Space of A Pod-Plane Gap Using Optimized Charge
Simulation", IEEE Transactions on EI Vol.EI-17 No.4, August 1982, pp.
333-337.
[9] M M Abouelsaad, M M El Bahy: "Accurate Field Computation of
Needle-Plane Gaps using an Optimized Charge Simulation Method",
Conference on Electrical Insulation and Dielectric Phenomena, 2000,
pp506-509.
[10] Ryo Nishimura, Katsumi Nishimori, Naganori Ishihara, "Automatic
arrangement of fictitious charges and contour points in charge
simulation method for two spherical electrodes", Journal of electrostatics
57, 2003, pp. 337-346.
[11] M.Th.El-Mohandes, H Okubo, "Error analysis based on the interaction
between simulating charges in the CSM for the Electric-Field
Calculation of HV Apparatus", European Transactions on Electric
Power, ETEP, Vol.4, No.6, November/December 1994, pp565-570.
[12] H. McL Ryan and C.A. Welley, "Field Auxiliary Factors for simple
electrode geometries". Proc IEE Vol 114, no.10, Oct, 1967, pp 1529-
1536.
[13] Y. Qui, "Simple expression of field nonuniformity factor for
hemisphereically capped rod-plane gap", IEEE Trans. Electrical
Insulation, Vol.21, No.4, 1986, pp. 673-675.
[14] Christopher R Houck, Jeffery A. Joines and Michael G.Kay, A genetic
algorithm for function optimization: A Matlab implementation, North
Carolina State University, available at
http://www.ie.ncsu.edu/mirage/GAToolBox/gaot//papers/gaotv5.ps.
[1] H Singer, H. Steinbigler P. Weiss, "A change simulation method for the
calculation of high voltage fields", IEEE trans, PAS vol.93, 1974,
pp1660-68.
[2] Nazar H Malik, "A review of the charge simulation method and its
application", IEEE Transaction on electrical insulation, Vol.24, No.1,
1989, pp. 1-20.
[3] S. Chakravorty, "Charge Simulation Method: a critical overview", Ie (I)
journal-el, Vol. 78, March 1998, pp. 210-214.
[4] E. Kuffel, W.S.Zeangle & J.Kuffel, "High Voltage Engineering
fundamentals", Newnes, An imprint of Butterworth-Heinemann, A
division of Reed Educational and Publishing Ltd, Woburn, MA. 2000,
pp.254-269.
[5] H Anis, A Zeitoun, M El-Ragheb m and El-Desouki, "Field calculations
Around Non-Standard Electrodes Using Regression and Their Spherical
Equivalence", IEEE Trans on PAS, Vol.PAS-96, no.6, November-
December 1977, pp.1721-1730.
[6] A Yializis, E.Kuffel, P H Alexander, "An Optimized Charge Simulation
Method for the Calculation of High Voltage fields", IEEE Transaction
on PAS-97, 1978, pp. 2434-40.
[7] Y L Chow and C Charalambous, "Static-field computation by method of
optimized simulated images", Proc. IEE, Vol.126, No.1, 1979, pp.123-
125.
[8] M R Iravani, M R Raghuveer, "Accurate Field Solution in the Entire
Inter electrode Space of A Pod-Plane Gap Using Optimized Charge
Simulation", IEEE Transactions on EI Vol.EI-17 No.4, August 1982, pp.
333-337.
[9] M M Abouelsaad, M M El Bahy: "Accurate Field Computation of
Needle-Plane Gaps using an Optimized Charge Simulation Method",
Conference on Electrical Insulation and Dielectric Phenomena, 2000,
pp506-509.
[10] Ryo Nishimura, Katsumi Nishimori, Naganori Ishihara, "Automatic
arrangement of fictitious charges and contour points in charge
simulation method for two spherical electrodes", Journal of electrostatics
57, 2003, pp. 337-346.
[11] M.Th.El-Mohandes, H Okubo, "Error analysis based on the interaction
between simulating charges in the CSM for the Electric-Field
Calculation of HV Apparatus", European Transactions on Electric
Power, ETEP, Vol.4, No.6, November/December 1994, pp565-570.
[12] H. McL Ryan and C.A. Welley, "Field Auxiliary Factors for simple
electrode geometries". Proc IEE Vol 114, no.10, Oct, 1967, pp 1529-
1536.
[13] Y. Qui, "Simple expression of field nonuniformity factor for
hemisphereically capped rod-plane gap", IEEE Trans. Electrical
Insulation, Vol.21, No.4, 1986, pp. 673-675.
[14] Christopher R Houck, Jeffery A. Joines and Michael G.Kay, A genetic
algorithm for function optimization: A Matlab implementation, North
Carolina State University, available at
http://www.ie.ncsu.edu/mirage/GAToolBox/gaot//papers/gaotv5.ps.
@article{"International Journal of Electrical, Electronic and Communication Sciences:64320", author = "Gururaj S Punekar and N K Kishore Senior and H S Y Shastry", title = "Effect of Non Uniformity Factors and Assignment Factors on Errors in Charge Simulation Method with Point Charge Model", abstract = "Charge Simulation Method (CSM) is one of the very widely used numerical field computation technique in High Voltage (HV) engineering. The high voltage fields of varying non uniformities are encountered in practice. CSM programs being case specific, the simulation accuracies heavily depend on the user (programmers) experience. Here is an effort to understand CSM errors and evolve some guidelines to setup accurate CSM models, relating non uniformities with assignment factors. The results are for the six-point-charge model of sphere-plane gap geometry. Using genetic algorithm (GA) as tool, optimum assignment factors at different non uniformity factors for this model have been evaluated and analyzed. It is shown that the symmetrically placed six-point-charge models can be good enough to set up CSM programs with potential errors less than 0.1% when the field non uniformity factor is greater than 2.64 (field utilization factor less than 52.76%).
", keywords = "Assignment factor, Charge Simulation Method, High Voltage, Numerical field computation, Non uniformity factor, Simulation errors.", volume = "2", number = "10", pages = "2411-5", }
