Effect of CW Laser Annealing on Silicon Surface for Application of Power Device
As application of re-activation of backside on power
device Insulated Gate Bipolar Transistor (IGBT), laser annealing was
employed to irradiate amorphous silicon substrate, and resistivities
were measured using four point probe measurement. For annealing
the amorphous silicon two lasers were used at wavelength of visible
green (532 nm) together with Infrared (793 nm). While the green
laser efficiently increased temperature at top surface the Infrared
laser reached more deep inside and was effective for melting the
top surface. A finite element method was employed to evaluate time
dependent thermal distribution in silicon substrate.
[1] J. P. Biersack and L. Haggmark, "Srim - the stopping and range of ions
in matter," Nucl. Instr. and Meth., vol. 174, p. 257, 1980.
[2] J. F. Ziegler, J. P. Biersack, and M. D. Ziegler, SRIM: The Stopping and
Range of Ions in Matter. 860 Aviation Parkway; Suite 300; Morrisville,
NC, 27560 USA: Lulu Press Co., 2008.
[3] S. de Unamuno and E. Fogarassy, "A thermal description of the melting
of c- and a-silicon under pulsed excimer lasers," Appl. Surf. Sci., vol. 36,
pp. 1 - 11, 1989.
[4] R. F. Wood and G. E. Giles, "Macroscopic theory of pulsed-laser
annealing. i. thermal transport and melting," Phys. Rev. B, vol. 23, no. 6,
p. 2923, 1981.
[5] K. Shimizu, S. Imai, O. Sugihara, and M. Matsumura, "Transient temperature
profiles in silicon films during pulsed laser annealing," Jpn. J.
Appl. Phys., vol. 30, no. 11A, pp. 2664-2672, 1991.
[6] J. R. Kohler, R. Dassow, and J. Werner, "Numerical modeling of high
repetition rate pulsed laser crystallization of silicon films on glass," Mat.
Res. Soc. Sympo. Proc., vol. 685E, pp. D10.3.1-D10.3.6, 2001.
[1] J. P. Biersack and L. Haggmark, "Srim - the stopping and range of ions
in matter," Nucl. Instr. and Meth., vol. 174, p. 257, 1980.
[2] J. F. Ziegler, J. P. Biersack, and M. D. Ziegler, SRIM: The Stopping and
Range of Ions in Matter. 860 Aviation Parkway; Suite 300; Morrisville,
NC, 27560 USA: Lulu Press Co., 2008.
[3] S. de Unamuno and E. Fogarassy, "A thermal description of the melting
of c- and a-silicon under pulsed excimer lasers," Appl. Surf. Sci., vol. 36,
pp. 1 - 11, 1989.
[4] R. F. Wood and G. E. Giles, "Macroscopic theory of pulsed-laser
annealing. i. thermal transport and melting," Phys. Rev. B, vol. 23, no. 6,
p. 2923, 1981.
[5] K. Shimizu, S. Imai, O. Sugihara, and M. Matsumura, "Transient temperature
profiles in silicon films during pulsed laser annealing," Jpn. J.
Appl. Phys., vol. 30, no. 11A, pp. 2664-2672, 1991.
[6] J. R. Kohler, R. Dassow, and J. Werner, "Numerical modeling of high
repetition rate pulsed laser crystallization of silicon films on glass," Mat.
Res. Soc. Sympo. Proc., vol. 685E, pp. D10.3.1-D10.3.6, 2001.
@article{"International Journal of Chemical, Materials and Biomolecular Sciences:62375", author = "Satoru Kaneko and Takeshi Ito and Kensuke Akiyama and Manabu Yasui and Chihiro Kato and Satomi Tanaka and Yasuo Hirabayashi and Takeshi Ozawa and Akira Matsuno and Takashi Nire and Hiroshi Funakubo and Mamoru Yoshimoto", title = "Effect of CW Laser Annealing on Silicon Surface for Application of Power Device", abstract = "As application of re-activation of backside on power
device Insulated Gate Bipolar Transistor (IGBT), laser annealing was
employed to irradiate amorphous silicon substrate, and resistivities
were measured using four point probe measurement. For annealing
the amorphous silicon two lasers were used at wavelength of visible
green (532 nm) together with Infrared (793 nm). While the green
laser efficiently increased temperature at top surface the Infrared
laser reached more deep inside and was effective for melting the
top surface. A finite element method was employed to evaluate time
dependent thermal distribution in silicon substrate.", keywords = "laser, annealing, silicon, recrystallization, thermal distribution, resistivity, finite element method, absorption, melting point, latent heat of fusion.", volume = "5", number = "2", pages = "191-3", }