Inductance Characteristic of Annealed Titanium Dioxide on Silicon Substrate
The control of oxygen flow rate during growth of
titanium dioxide by mass flow controller in DC plasma sputtering
growth system is studied. The impedance of TiO2 films for inductance
effect is influenced by annealing time and oxygen flow rate. As
annealing time is increased, the inductance of TiO2 film is the more.
The growth condition of optimum and maximum inductance for TiO2
film to serve as sensing device are oxygen flow rate of 15 sccm and
large annealing time. The large inductance of TiO2 film will be
adopted to fabricate the biosensor to obtain the high sensitivity of
sensing in biology.
[1] J. M. Jung, M. Wang, E. J. Kim, C. Park, and S. H. Hahn, "Enhanced
photocatalytic activity of Au-buffered TiO2 thin films prepared by radio
frequency magnetron sputtering," Applied Catalysis B: Environmental,
vol. 84, pp. 389-392, 2008.
[2] M. K. Bera and C. K. Maiti, "Electrical properties of SiO2/TiO2
high-╬║gate dielectric stack,"Materials Science in Semiconductor
Proceeding, vol.9, pp. 909-917, 2006.
[3] M. F. Brunella, M.V. Diamanti, M. P. Pedeferri, F. Di Fonzo, C. S. Casari,
and A. Li.Bassi,, "Photocatalytic behavior of different titanium dioxide
layers," Thin Solid Films, vol. 515, pp.6309-6313, 2007.
[4] I. Jogi, K. Kukli, J. Araik, A. Aidla, and J. Lu, "Precursor-dependent
structural and electrical characteristics of atomic layer deposited films:
Case study on titanium oxide," Materials Science in Semiconductor
Proceeding, vol.9, pp. 1084-1089, 2006.
[5] B. Karunagaran, R. T. Rajendra Kumar, V. Senthil Kumar, D. Managlaraj,
Sa. K. Narayandass, G. Mohan Rao, "Structure characteristization of DC
magnetron-sputtered TiO2 thin films using XRD and Raman scattering
studies," Materials Science in Semiconductor Proceeding, vol.6, pp.
547-550, 2003.
[6] M. H. Weng, R. Mahapatra, P. Tappin, B. Miao, s. Chattopadhyay, A.B.
Horsfall, and N. G. Wright, "High temperature characterization of
high-╬║dielectrics on SiC," Materials Science in Semiconductor
Proceeding, vol.9, pp. 1133-1136, 2006.
[7] M. F. Hossain, S. Biswas, T. Takahashi, and A. Fujishima, "Investigation
of sputter-deposited TiO2 thin film for the fabrication of dye-sensitized
solar cells," Thin Solid Films, vol.516, pp.7149-7154, 2008.
[1] J. M. Jung, M. Wang, E. J. Kim, C. Park, and S. H. Hahn, "Enhanced
photocatalytic activity of Au-buffered TiO2 thin films prepared by radio
frequency magnetron sputtering," Applied Catalysis B: Environmental,
vol. 84, pp. 389-392, 2008.
[2] M. K. Bera and C. K. Maiti, "Electrical properties of SiO2/TiO2
high-╬║gate dielectric stack,"Materials Science in Semiconductor
Proceeding, vol.9, pp. 909-917, 2006.
[3] M. F. Brunella, M.V. Diamanti, M. P. Pedeferri, F. Di Fonzo, C. S. Casari,
and A. Li.Bassi,, "Photocatalytic behavior of different titanium dioxide
layers," Thin Solid Films, vol. 515, pp.6309-6313, 2007.
[4] I. Jogi, K. Kukli, J. Araik, A. Aidla, and J. Lu, "Precursor-dependent
structural and electrical characteristics of atomic layer deposited films:
Case study on titanium oxide," Materials Science in Semiconductor
Proceeding, vol.9, pp. 1084-1089, 2006.
[5] B. Karunagaran, R. T. Rajendra Kumar, V. Senthil Kumar, D. Managlaraj,
Sa. K. Narayandass, G. Mohan Rao, "Structure characteristization of DC
magnetron-sputtered TiO2 thin films using XRD and Raman scattering
studies," Materials Science in Semiconductor Proceeding, vol.6, pp.
547-550, 2003.
[6] M. H. Weng, R. Mahapatra, P. Tappin, B. Miao, s. Chattopadhyay, A.B.
Horsfall, and N. G. Wright, "High temperature characterization of
high-╬║dielectrics on SiC," Materials Science in Semiconductor
Proceeding, vol.9, pp. 1133-1136, 2006.
[7] M. F. Hossain, S. Biswas, T. Takahashi, and A. Fujishima, "Investigation
of sputter-deposited TiO2 thin film for the fabrication of dye-sensitized
solar cells," Thin Solid Films, vol.516, pp.7149-7154, 2008.
@article{"International Journal of Chemical, Materials and Biomolecular Sciences:60287", author = "Chih Chin Yang and Lan Hui Huang and Bo Shum Chen and Jia Liang Ke and Chung Lun Tsai", title = "Inductance Characteristic of Annealed Titanium Dioxide on Silicon Substrate", abstract = "The control of oxygen flow rate during growth of
titanium dioxide by mass flow controller in DC plasma sputtering
growth system is studied. The impedance of TiO2 films for inductance
effect is influenced by annealing time and oxygen flow rate. As
annealing time is increased, the inductance of TiO2 film is the more.
The growth condition of optimum and maximum inductance for TiO2
film to serve as sensing device are oxygen flow rate of 15 sccm and
large annealing time. The large inductance of TiO2 film will be
adopted to fabricate the biosensor to obtain the high sensitivity of
sensing in biology.", keywords = "Annealed, Inductance, Silicon substarte, Titanium
dioxide", volume = "3", number = "8", pages = "413-3", }