Abstract: To date, nanomaterials have received extensive attention over the years because of their wide application. Various nanomaterials such as nanoparticles, nanowire, nanoring, nanostars and other nanostructures have begun to be systematically studied. The preparation of these materials by chemical methods is not only costly, but also has a long cycle and high toxicity. At the same time, preparation of nanoparticles of multi-doped composites has been limited due to the special structure of the materials. In order to prepare multi-doped composites with the same structure as macro-materials and simplify the preparation method, the GaxCo1-xZnSe0.4 (x = 0.1, 0.3, 0.5) nanoparticles are prepared by Pulse Laser Ablation (PLA) method. The particle component and structure are systematically investigated by X-ray diffraction (XRD) and Raman spectra, which show that the success of our preparation and the same concentration between nanoparticles (NPs) and target. Morphology of the NPs characterized by Transmission Electron Microscopy (TEM) indicates the circular-shaped particles in preparation. Fluorescence properties are reflected by PL spectra, which demonstrate the best performance in concentration of Ga0.3Co0.3ZnSe0.4. Therefore, all the results suggest that PLA is promising to prepare the multi-NPs since it can modulate performance of NPs.
Abstract: One-dimensional (1D) nanostructures like nanowires, nanotubes, and nanorods find variety of practical application owing to their unique physico-chemical properties. In this work, TiO2 nanowires were synthesized by direct oxidation of titanium particles in a unique microwave plasma jet reactor. The prepared TiO2 nanowires manifested the flexible features, and were characterized by using X-ray diffraction, Brunauer-Emmett-Teller (BET) surface area analyzer, UV-Visible and FTIR spectrophotometers, Scanning electron microscope, and Transmission electron microscope. Further, the photodegradation efficiency of these nanowires were tested against toxic organic dye like methylene blue (MB) and the results were compared with the commercial TiO2. It was found that TiO2 nanowires exhibited superior photocatalytic performance (89%) as compared to commercial TiO2 (75%) after 60 min of reaction. This is attributed to the lower recombination rate and increased interfacial charge transfer in TiO2 nanowire. Pseudo-first order kinetic modelling performed with the experimental results revealed that the rate constant of photodegradation in case of TiO2 nanowire was 1.3 times higher than that of commercial TiO2. Superoxide radical (O2˙−) was found to be the major contributor in the photodegradation mechanism. Based on the trapping experiments, a plausible mechanism of the photocatalytic reaction is discussed.
Abstract: The surface and bulk magnetization behavior of template released isolated ferromagnetic Ni60Fe40 nanowires of relatively thick diameters (~200 nm), deposited from a dilute suspension onto pre-patterned insulating chips have been investigated experimentally, using a highly sensitive Magneto-Optical Ker Effect (MOKE) magnetometry and Magneto-Resistance (MR) measurements, respectively. The MR data were consistent with the theoretical predictions of the anisotropic magneto-resistance (AMR) effect. The MR measurements, in all the angles of investigations, showed large features and a series of nonmonotonic "continuous small features" in the resistance profiles. The extracted switching fields from these features and from MOKE loops were compared with each other and with the switching fields reported in the literature that adopted the same analytical techniques on the similar compositions and dimensions of nanowires. A large difference between MOKE and MR measurments was noticed. The disparate between MOKE and MR results is attributed to the variance in the micro-magnetic structure of the surface and the bulk of such ferromagnetic nanowires. This result was ascertained using micro-magnetic simulations on an individual: cylindrical and rectangular cross sections NiFe nanowires, with the same diameter/thickness of the experimental wires, using the Object Oriented Micro-magnetic Framework (OOMMF) package where the simulated loops showed different switching events, indicating that such wires have different magnetic states in the reversal process and the micro-magnetic spin structures during switching behavior was complicated. These results further supported the difference between surface and bulk magnetization behavior in these nanowires. This work suggests that a combination of MOKE and MR measurements is required to fully understand the magnetization behavior of such relatively thick isolated cylindrical ferromagnetic nanowires.
Abstract: Elastic performances, as an essential property of nanowires (NWs), play a significant role in the design and fabrication of modern nanodevices. In this paper, our interest is focused on ZnO NWs to investigate wire diameter (Dwire ≤ 400 nm) effects on elastic properties. The plotted data reveal that a strong size dependence of the elastic constants exists when the wire diameter is smaller than ~ 100 nm. For larger diameters (Dwire > 100 nm), these ones approach their corresponding bulk values. To enrich this study, we make use of the scanning acoustic microscopy simulation technique. The calculation methodology consists of several steps: determination of longitudinal and transverse wave velocities, calculation of refection coefficients, calculation of acoustic signatures and Rayleigh velocity determination. Quantitatively, it was found that changes in ZnO diameters over the ranges 1 nm ≤ Dwire ≤ 100 nm lead to similar exponential variations, for all elastic parameters, of the from: A = a + b exp(-Dwire/c) where a, b, and c are characteristic constants of a given parameter. The developed relation can be used to predict elastic properties of such NW by just knowing its diameter and vice versa.
Abstract: Characterizing the fatigue and fracture properties of nanostructures is one of the most challenging tasks in nanoscience and nanotechnology due to lack of a MEMS/NEMS device for generating uniform cyclic loadings at high frequencies. Here, the dynamic response of a recently proposed MEMS/NEMS device under different inputs signals is completely investigated. This MEMS/NEMS device is designed and modeled based on the electromagnetic force induced between paired parallel wires carrying electrical currents, known as Ampere’s Force Law (AFL). Since this MEMS/NEMS device only uses two paired wires for actuation part and sensing part, it represents highly sensitive and linear response for nanostructures with any stiffness and shapes (single or arrays of nanowires, nanotubes, nanosheets or nanowalls). In addition to studying the maximum gains at different resonance frequencies of the MEMS/NEMS device, its dynamical responses are investigated for different inputs and nanostructure properties to demonstrate the capability, usability, and reliability of the device for wide range of nanostructures. This MEMS/NEMS device can be readily integrated into SEM/TEM instruments to provide real time study of the fatigue and fracture properties of nanostructures as well as their softening or hardening behaviors, and initiation and/or propagation of nanocracks in them.
Abstract: In this work, efficient directional coupler composed of
dielectric waveguides and metallic film has been analyzed in details
by simulations using finite element method (FEM). The structure
consists of a step-index fiber with dielectric core, silica cladding, and
a metal nanowire parallel to the core. The results show that an
efficient conversion of optical dielectric modes to long range
plasmonic is possible. Low insertion losses in conjunction with short
coupling length and a broadband operation can be achieved under
certain conditions. This kind of couplers has potential applications for
the design of photonic integrated circuits for signal routing between
dielectric/plasmonic waveguides, sensing, lithography, and optical
storage systems. A high efficient focusing of light in a very small
region can be obtained.
Abstract: MnO2 nanowires were developed as filtration media for wastewater treatment that uniquely combines several advantages. The resulting material demonstrated strong capability to remove the pollution of heavy metal ions and organic contents in water. In addition, the manufacture process of such material is practical and economical. In this work, MnO2 nanowires were integrated with the state-of-art bio-electrochemical system for wastewater treatment, to overcome problems currently encountered with organic, inorganic, heavy metal, and microbe removal, and to minimize the unit footprint (land/space occupation) at low cost. Results showed that coupling the bio-electrochemical with MnO2 resulted in very encouraging results with higher removal efficiencies of such pollutants.
Abstract: The material behavior of graphene, a single layer of
carbon lattice, is extremely sensitive to its dielectric environment. We
demonstrate improvement in electronic performance of graphene
nanowire interconnects with full encapsulation by lattice-matching,
chemically inert, 2D layered insulator hexagonal boron nitride (h-
BN). A novel layer-based transfer technique is developed to construct
the h-BN/MLG/h-BN heterostructures. The encapsulated graphene
wires are characterized and compared with that on SiO2 or h-BN
substrate without passivating h-BN layer. Significant improvements
in maximum current-carrying density, breakdown threshold, and
power density in encapsulated graphene wires are observed. These
critical improvements are achieved without compromising the carrier
transport characteristics in graphene. Furthermore, graphene wires
exhibit electrical behavior less insensitive to ambient conditions, as
compared with the non-passivated ones. Overall, h-BN/graphene/h-
BN heterostructure presents a robust material platform towards the
implementation of high-speed carbon-based interconnects.
Abstract: Conductivity properties of DNA molecule is
investigated in a simple, but chemically specific approach that is
intimately related to the Su-Schrieffer-Heeger (SSH) model. This
model is a tight-binding linear nanoscale chain. We have tried to
study the electrical current flowing in DNA and investigated the
characteristic I-V diagram. As a result, It is shown that there are the
(quasi-) ohmic areas in I-V diagram. On the other hand, the regions
with a negative differential resistance (NDR) are detectable in
diagram.
Abstract: Nanotechnology has become the world attention in
various applications including the solar cells devices due to the
uniqueness and benefits of achieving low cost and better
performances of devices. Recently, thin film solar cells such as
Cadmium Telluride (CdTe), Copper-Indium-Gallium-diSelenide
(CIGS), Copper-Zinc-Tin-Sulphide (CZTS), and Dye-Sensitized
Solar Cells (DSSC) enhanced by nanotechnology have attracted
much attention. Thus, a compilation of nanotechnology devices
giving the progress in the solar cells has been presented. It is much
related to nanoparticles or nanocrystallines, carbon nanotubes, and
nanowires or nanorods structures.
Abstract: The iron environment in Fe-doped Vycor Anode was
investigated with EXAFS using Brookhaven Synchrotron Light
Source. The iron-reducing Shewanella oneidensis culture was grown
in a microbial fuel cell under anaerobic respiration. The Fe bond
length was found to decrease and correlate with the amount of
biofilm growth on the Fe-doped Vycor Anode. The data suggests that
Fe-doped Vycor Anode would be a good substrate to study the
Shewanella oneidensis nanowire structure using EXAFS.
Abstract: The objective of this work is to study the effect of two
key factors - external magnetic field and applied current density
during template-based electrodeposition of nickel nanowires using an
electrode distance of 20 mm. Morphology, length, crystallite size and
crystallographic characterization of the grown nickel nanowires at an
electrode distance of 20mm are presented. For this electrode distance
of 20 mm, these two key electrodeposition factors when coupled was
found to reduce crystallite size with a higher growth length and
preferred orientation of Ni crystals. These observed changes can be
inferred to be due to coupled interaction forces induced by the
intensity of applied electric field (current density) and external
magnetic field known as magnetohydrodynamic (MHD) effect during
the electrodeposition process.
Abstract: In order to manufacture short gap single Si nanowire
(NW) field effect transistor (FET) by imprinting and transferring
method, we introduce the method using Al2O3 sacrificial layer. The
diameters of cylindrical Si NW addressed between Au electrodes by
dielectrophoretic (DEP) alignment method are controlled to 106, 128,
and 148 nm. After imprinting and transfer process, cylindrical Si NW
is embedded in PVP adhesive and dielectric layer. By curing
transferred cylindrical Si NW and Au electrodes on PVP-coated p++ Si
substrate with 200nm-thick SiO2, 3μm gap Si NW FET fabrication
was completed. As the diameter of embedded Si NW increases, the
mobility of FET increases from 80.51 to 121.24 cm2/V·s and the
threshold voltage moves from –7.17 to –2.44 V because the ratio of
surface to volume gets reduced.
Abstract: Nanotechnology is the new cyber, according to several major leaders in this field. Just as cyber is entrenched across global society now, nano is poised to be major capabilities enabler of the next decades. Expert members from the National Nanotechnology Initiative (in U.S.) representing government and science disciplines say nano has great significance for the military and the general public. It is predicted that after next 15 years nanotechnology will replace information technology as the most economic technology platform. Nanotechnology has even wider applications than information technology.
Abstract: The mechanism of nickel (Ni) metallization in silicon-germanium (Si0.5Ge0.5) alloy nanowire (NW) was studied. Transmission electron microscope imaging with in-situ annealing was conducted at temperatures of 200oC to 600°C. During rapid formation of Ni germanosilicide, loss of material from from the SiGe NW occurred which led to the formation of a thin Ni germanosilicide filament and eventual void. Energy dispersive X-ray spectroscopy analysis along the SiGe NW before and after annealing determined that Ge atoms tend to out-diffuse from the Ni germanosilicide towards the Ni source in the course of annealing. A model for the Ni germanosilicide formation in SiGe NW is proposed to explain this observation.
Abstract: This paper presents device simulations on the vertical silicon nanowire tunneling FET (VSiNW TFET). Simulations show that a narrow nanowire and thin gate oxide is required for good performance, which is expected even for conventional MOSFETs. The gate length also needs to be more than the nanowire diameter to prevent short channel effects. An effect more unique to TFET is the need for abrupt source to channel junction, which is shown to improve the performance. The ambipolar effect suppression by reducing drain doping concentration is also explored and shown to have little or no effect on performance.
Abstract: Single photon detectors have been fabricated NbN
nano wire. These detectors are fabricated from high quality, ultra
high vacuum sputtered NbN thin films on a sapphire substrate. In this
work a typical schematic of the nanowire Single Photon Detector
structure and then driving and measurement electronic circuit are
shown.
The response of superconducting nanowire single photon detectors
during a photo detection event, is modeled by a special electrical
circuits (two circuit).
Finally, current through the wire is calculated by solving
equations of models.
Abstract: This paper presents a vertical silicon nanowire n- MOSFET integrated with a CMOS-compatible fully-silicided (FUSI) NiSi2 gate. Devices with nanowire diameter of 50nm show good electrical performance (SS < 70mV/dec, DIBL < 30mV/V, Ion/Ioff > 107). Most significantly, threshold voltage tunability of about 0.2V is shown. Although threshold voltage remains low for the 50nm diameter device, it is expected to become more positive as nanowire diameter reduces.
Abstract: We integrate TiN/Ni/HfO2/Si RRAM cell with a
vertical gate-all-around (GAA) nanowire transistor to achieve
compact 4F2 footprint in a 1T1R configuration. The tip of the Si
nanowire (source of the transistor) serves as bottom electrode of the
memory cell. Fabricated devices with nanowire diameter ~ 50nm
demonstrate ultra-low current/power switching; unipolar switching
with 10μA/30μW SET and 20μA/30μW RESET and bipolar switching
with 20nA/85nW SET and 0.2nA/0.7nW RESET. Further, the
switching current is found to scale with nanowire diameter making the
architecture promising for future scaling.
Abstract: We investigated a modified thermal evaporation
method in the growth process of ZnO nanowires. ZnO nanowires
were fabricated on p-type silicon substrates without using a metal
catalyst. A simple horizontal double-tube system along with
chemical vapor diffusion of the precursor was used to grow the ZnO
nanowires. The substrates were placed in different temperature
zones, and ZnO nanowires with different diameters were obtained for
the different substrate temperatures. In addition to the nanowires,
ZnO microdiscs with different diameters were obtained on another
substrate, which was placed at a lower temperature than the other
substrates. The optical properties and crystalline quality of the ZnO
nanowires and microdiscs were characterized by room temperature
photoluminescence (PL) and Raman spectrometers. The PL and
Raman studies demonstrated that the ZnO nanowires and microdiscs
grown using such set-up had good crystallinity with excellent optical
properties. Rectifying behavior of ZnO/Si heterostructures was
characterized by a simple DC circuit.