Abstract: We investigated a modified thermal evaporation
method in the growth process of ZnO nanowires. ZnO nanowires
were fabricated on p-type silicon substrates without using a metal
catalyst. A simple horizontal double-tube system along with
chemical vapor diffusion of the precursor was used to grow the ZnO
nanowires. The substrates were placed in different temperature
zones, and ZnO nanowires with different diameters were obtained for
the different substrate temperatures. In addition to the nanowires,
ZnO microdiscs with different diameters were obtained on another
substrate, which was placed at a lower temperature than the other
substrates. The optical properties and crystalline quality of the ZnO
nanowires and microdiscs were characterized by room temperature
photoluminescence (PL) and Raman spectrometers. The PL and
Raman studies demonstrated that the ZnO nanowires and microdiscs
grown using such set-up had good crystallinity with excellent optical
properties. Rectifying behavior of ZnO/Si heterostructures was
characterized by a simple DC circuit.