High Optical Properties and Rectifying Behavior of ZnO (Nano and Microstructures)/Si Heterostructures
We investigated a modified thermal evaporation
method in the growth process of ZnO nanowires. ZnO nanowires
were fabricated on p-type silicon substrates without using a metal
catalyst. A simple horizontal double-tube system along with
chemical vapor diffusion of the precursor was used to grow the ZnO
nanowires. The substrates were placed in different temperature
zones, and ZnO nanowires with different diameters were obtained for
the different substrate temperatures. In addition to the nanowires,
ZnO microdiscs with different diameters were obtained on another
substrate, which was placed at a lower temperature than the other
substrates. The optical properties and crystalline quality of the ZnO
nanowires and microdiscs were characterized by room temperature
photoluminescence (PL) and Raman spectrometers. The PL and
Raman studies demonstrated that the ZnO nanowires and microdiscs
grown using such set-up had good crystallinity with excellent optical
properties. Rectifying behavior of ZnO/Si heterostructures was
characterized by a simple DC circuit.
[1] M.H. Huang, S. Mao, H. Yan, Y. Wu, H. Kind, E. Weber, R. Russo and
P. Yang, Science 292 (2002) 1897.
[2] T. Premkumar, P. Manoravi, B.K. Panigrahi, K. Baskar, Appl. Surf. Sci
255 (2009) 6819.
[3] Y. Ma, C.P. Wong, X.T. Zeng, T. Yu, Y. Zhu, Z.X. Shen, J. Phys. D:
Appl. Phys. 42 (2009) 065417.
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5238.
[5] Y.J. Tak, Y.H. Ryu, K. Yong, Nanotechnology 16 (2005) 1712.
[6] L.C. Tien, D.P. Norton, S.J. Pearton , H.T. Wang, F. Ren, Appl. Surf.
Sci 253 (2007) 4620.
[7] Y. Liu, Z. H. Kang, Z. H. Chen, I. Shafiq, J. A. Zapien, I. Bello,W. J.
Zhang, S. T. Lee, Crystal Growth & Design, 9 (2009) 3223.
[8] S.Y. Li, C.Y. Lee and T.Y. Tseng, J. Cryst.Growth 247 (2003) 357.
[9] P.X. Gao, Y. Ding and Z.L. Wang, Nano Letters 3 (2003) 1315.
[10] S.C. Lyu, Y. Zhang, C.J. Lee, H. Ruh and H.J. Lee, Chem. Mater. 15
(2003) 3294.
[11] E. Lai, W. Kim, P. Yang, Nano Res 1 (2008) 123
[12] L. Wang, Y. Pu, Y.F. Chen, C.L. Mo, W.Q. Fang, C.B. Xiong, J.N. Dai,
F.Y. Jiang, J. Cryst.Growth 284 (2005) 459.
[13] J.H. He, J.H. Hsu, C.W. Wang, H.N. Lin, L.J. Chen, Z.L. Wang, J. Phys.
Chem. B, 110 (2006), 50
[14] C. Ye, X. Fang, Y. Hao, X. Teng and L. Zhang, J. Phys. Chem. B 109
(2005) 19758.
[15] Z.L. Wang, J. Phys.: Condens. Matter 16 (2004) R829.
[16] C. Kittel, Thermal Physics; First ed; John Wily & Sons, Inc. New York
1969.
[17] C. Kittel, Introduction to Solid State Physics; 6th ed; Wiley, New York
1986.
[18] S.L. Mensah, V.K. Kayastha, Y.K. Yap, J. Phys. Chem. C 111 (2007)
16092.
[19] J. Li, Q. Zhang, H. Peng, H.O. Everitt, L. Qin, J. Liu, J. Phys. Chem. C
113 (2009) 3950.
[20] K. Vanheusden, W.L. Warren, C.H. Seager, D.R. Tallant, J.A. Voigt and
B.E. Gnade, J. Appl. Phys, 79 (1996) 7983.
[21] R. Yousefi, B. Kamaluddin, J. Alloy Compd. 479 (2009) L11.
[22] A. Umar, Y.B. Hahn, Appl. Phys. Lett. 88 (2006) 173120.
[23] A. Umar, S.H. Kim, Y.S. Lee, K.S. Nahm, Y.B. Hahn, J. Cryst. Growth
282 (2005) 131-36.
[1] M.H. Huang, S. Mao, H. Yan, Y. Wu, H. Kind, E. Weber, R. Russo and
P. Yang, Science 292 (2002) 1897.
[2] T. Premkumar, P. Manoravi, B.K. Panigrahi, K. Baskar, Appl. Surf. Sci
255 (2009) 6819.
[3] Y. Ma, C.P. Wong, X.T. Zeng, T. Yu, Y. Zhu, Z.X. Shen, J. Phys. D:
Appl. Phys. 42 (2009) 065417.
[4] D.J.Park, D.C. Kim, J.Y. Lee1, H.K. Cho, Nanotechnology 17 (2006)
5238.
[5] Y.J. Tak, Y.H. Ryu, K. Yong, Nanotechnology 16 (2005) 1712.
[6] L.C. Tien, D.P. Norton, S.J. Pearton , H.T. Wang, F. Ren, Appl. Surf.
Sci 253 (2007) 4620.
[7] Y. Liu, Z. H. Kang, Z. H. Chen, I. Shafiq, J. A. Zapien, I. Bello,W. J.
Zhang, S. T. Lee, Crystal Growth & Design, 9 (2009) 3223.
[8] S.Y. Li, C.Y. Lee and T.Y. Tseng, J. Cryst.Growth 247 (2003) 357.
[9] P.X. Gao, Y. Ding and Z.L. Wang, Nano Letters 3 (2003) 1315.
[10] S.C. Lyu, Y. Zhang, C.J. Lee, H. Ruh and H.J. Lee, Chem. Mater. 15
(2003) 3294.
[11] E. Lai, W. Kim, P. Yang, Nano Res 1 (2008) 123
[12] L. Wang, Y. Pu, Y.F. Chen, C.L. Mo, W.Q. Fang, C.B. Xiong, J.N. Dai,
F.Y. Jiang, J. Cryst.Growth 284 (2005) 459.
[13] J.H. He, J.H. Hsu, C.W. Wang, H.N. Lin, L.J. Chen, Z.L. Wang, J. Phys.
Chem. B, 110 (2006), 50
[14] C. Ye, X. Fang, Y. Hao, X. Teng and L. Zhang, J. Phys. Chem. B 109
(2005) 19758.
[15] Z.L. Wang, J. Phys.: Condens. Matter 16 (2004) R829.
[16] C. Kittel, Thermal Physics; First ed; John Wily & Sons, Inc. New York
1969.
[17] C. Kittel, Introduction to Solid State Physics; 6th ed; Wiley, New York
1986.
[18] S.L. Mensah, V.K. Kayastha, Y.K. Yap, J. Phys. Chem. C 111 (2007)
16092.
[19] J. Li, Q. Zhang, H. Peng, H.O. Everitt, L. Qin, J. Liu, J. Phys. Chem. C
113 (2009) 3950.
[20] K. Vanheusden, W.L. Warren, C.H. Seager, D.R. Tallant, J.A. Voigt and
B.E. Gnade, J. Appl. Phys, 79 (1996) 7983.
[21] R. Yousefi, B. Kamaluddin, J. Alloy Compd. 479 (2009) L11.
[22] A. Umar, Y.B. Hahn, Appl. Phys. Lett. 88 (2006) 173120.
[23] A. Umar, S.H. Kim, Y.S. Lee, K.S. Nahm, Y.B. Hahn, J. Cryst. Growth
282 (2005) 131-36.
@article{"International Journal of Engineering, Mathematical and Physical Sciences:62715", author = "Ramin Yousefi and Muhamad. Rasat. Muhamad", title = "High Optical Properties and Rectifying Behavior of ZnO (Nano and Microstructures)/Si Heterostructures", abstract = "We investigated a modified thermal evaporation
method in the growth process of ZnO nanowires. ZnO nanowires
were fabricated on p-type silicon substrates without using a metal
catalyst. A simple horizontal double-tube system along with
chemical vapor diffusion of the precursor was used to grow the ZnO
nanowires. The substrates were placed in different temperature
zones, and ZnO nanowires with different diameters were obtained for
the different substrate temperatures. In addition to the nanowires,
ZnO microdiscs with different diameters were obtained on another
substrate, which was placed at a lower temperature than the other
substrates. The optical properties and crystalline quality of the ZnO
nanowires and microdiscs were characterized by room temperature
photoluminescence (PL) and Raman spectrometers. The PL and
Raman studies demonstrated that the ZnO nanowires and microdiscs
grown using such set-up had good crystallinity with excellent optical
properties. Rectifying behavior of ZnO/Si heterostructures was
characterized by a simple DC circuit.", keywords = "ZnO nano and microstructures, Photoluminescence,Raman, Rectifying behavior.", volume = "5", number = "2", pages = "185-5", }