Fabrication of Cylindrical Silicon Nanowire-Embedded Field Effect Transistor Using Al2O3 Transfer Layer

In order to manufacture short gap single Si nanowire (NW) field effect transistor (FET) by imprinting and transferring method, we introduce the method using Al2O3 sacrificial layer. The diameters of cylindrical Si NW addressed between Au electrodes by dielectrophoretic (DEP) alignment method are controlled to 106, 128, and 148 nm. After imprinting and transfer process, cylindrical Si NW is embedded in PVP adhesive and dielectric layer. By curing transferred cylindrical Si NW and Au electrodes on PVP-coated p++ Si substrate with 200nm-thick SiO2, 3μm gap Si NW FET fabrication was completed. As the diameter of embedded Si NW increases, the mobility of FET increases from 80.51 to 121.24 cm2/V·s and the threshold voltage moves from –7.17 to –2.44 V because the ratio of surface to volume gets reduced.

A Novel Tracking Method Using Filtering and Geometry

Image target detection and tracking methods based on target information such as intensity, shape model, histogram and target dynamics have been proven to be robust to target model variations and background clutters as shown by recent researches. However, no definitive answer has been given to occluded target by counter measure or limited field of view(FOV). In this paper, we will present a novel tracking method using filtering and computational geometry. This paper has two central goals: 1) to deal with vulnerable target measurements; and 2) to maintain target tracking out of FOV using non-target-originated information. The experimental results, obtained with airborne images, show a robust tracking ability with respect to the existing approaches. In exploring the questions of target tracking, this paper will be limited to consideration of airborne image.