Abstract: In this letter, we demonstrate high-performance AlGaN/GaN planar Schottky barrier diodes (SBDs) on the silicon substrate with field plate structure for increasing breakdown voltage VB. A low turn-on resistance RON (3.55 mΩ-cm2), low reverse leakage current (< 0.1 µA) at -100 V, and high reverse breakdown voltage VB (> 1.1 kV) SBD has been fabricated. A virgin SBD exhibited a breakdown voltage (measured at 1 mA/mm) of 615 V, and with the field plate technology device exhibited a breakdown voltage (measured at 1 mA/mm) of 1525 V (the anode–cathode distance was LAC = 40 µm). Devices without the field plate design exhibit a Baliga’s figure of merit of VB2/ RON = 60.2 MW/cm2, whereas devices with the field plate design show a Baliga’s figure of merit of VB2/ RON = 340.9 MW/cm2 (the anode–cathode distance was LAC = 20 µm).
Abstract: Motivated by recent experimental and theoretical developments, we investigate the influence of embedded quantum dot (EQD) of different geometries (lens, ring and pyramidal) in a double barrier heterostructure (DBH). We work with a general theory of quantum transport that accounts the tight-binding model for the spin dependent resonant tunneling in a semiconductor nanostructure, and Rashba spin orbital to study the spin orbit coupling. In this context, we use the second quantization theory for Rashba effect and the standard Green functions method. We calculate the current density as a function of the voltage without and in the presence of quantum dots. In the second case, we considered the size and shape of the quantum dot, and in the two cases, we worked considering the spin polarization affected by external electric fields. We found that the EQD generates significant changes in current when we consider different morphologies of EQD, as those described above. The first thing shown is that the current decreases significantly, such as the geometry of EQD is changed, prevailing the geometrical confinement. Likewise, we see that the current density decreases when the voltage is increased, showing that the quantum system studied here is more efficient when the morphology of the quantum dot changes.
Abstract: The material behavior of graphene, a single layer of
carbon lattice, is extremely sensitive to its dielectric environment. We
demonstrate improvement in electronic performance of graphene
nanowire interconnects with full encapsulation by lattice-matching,
chemically inert, 2D layered insulator hexagonal boron nitride (h-
BN). A novel layer-based transfer technique is developed to construct
the h-BN/MLG/h-BN heterostructures. The encapsulated graphene
wires are characterized and compared with that on SiO2 or h-BN
substrate without passivating h-BN layer. Significant improvements
in maximum current-carrying density, breakdown threshold, and
power density in encapsulated graphene wires are observed. These
critical improvements are achieved without compromising the carrier
transport characteristics in graphene. Furthermore, graphene wires
exhibit electrical behavior less insensitive to ambient conditions, as
compared with the non-passivated ones. Overall, h-BN/graphene/h-
BN heterostructure presents a robust material platform towards the
implementation of high-speed carbon-based interconnects.
Abstract: This article is deal with the experimental
investigations of the laser diode matrixes (LDM) based on the
AlGaAs/GaAs heterostructures (lasing wavelength 790-880 nm) to
find optimal LDM parameters for active vision systems. In particular,
the dependence of LDM radiation pulse power on the pulse duration
and LDA active layer heating as well as the LDM radiation
divergence are discussed.
Abstract: We investigated a modified thermal evaporation
method in the growth process of ZnO nanowires. ZnO nanowires
were fabricated on p-type silicon substrates without using a metal
catalyst. A simple horizontal double-tube system along with
chemical vapor diffusion of the precursor was used to grow the ZnO
nanowires. The substrates were placed in different temperature
zones, and ZnO nanowires with different diameters were obtained for
the different substrate temperatures. In addition to the nanowires,
ZnO microdiscs with different diameters were obtained on another
substrate, which was placed at a lower temperature than the other
substrates. The optical properties and crystalline quality of the ZnO
nanowires and microdiscs were characterized by room temperature
photoluminescence (PL) and Raman spectrometers. The PL and
Raman studies demonstrated that the ZnO nanowires and microdiscs
grown using such set-up had good crystallinity with excellent optical
properties. Rectifying behavior of ZnO/Si heterostructures was
characterized by a simple DC circuit.
Abstract: We report a lithography-free approach to fabricate the
biomimetics, quasi-beehive Si nanostructures (QBSNs), on
Si-substrates. The self-assembled SiGe nanoislands via the strain
induced surface roughening (Asaro-Tiller-Grinfeld instability) during
in-situ annealing play a key role as patterned sacrifice regions for
subsequent reactive ion etching (RIE) process performed for
fabricating quasi-beehive nanostructures on Si-substrates. As the
measurements of field emission, the bare QBSNs show poor field
emission performance, resulted from the existence of the native oxide
layer which forms an insurmountable barrier for electron emission. In
order to dramatically improve the field emission characteristics, the
platinum nanopillars (Pt-NPs) were deposited on QBSNs to form
Pt-NPs/QBSNs heterostructures. The turn-on field of Pt-NPs/QBSNs
is as low as 2.29 V/μm (corresponding current density of 1 μA/cm2),
and the field enhancement factor (β-value) is significantly increased to
6067. More importantly, the uniform and continuous electrons excite
light emission, due to the surrounding filed emitters from
Pt-NPs/QBSNs, can be easily obtained. This approach does not require
an expensive photolithographic process and possesses great potential
for applications.
Abstract: ZnO heteronanostructured nanowires arrays have
been fabricated by low temperature solution method. Various
heterostructures were synthesized including CdS/ZnO,
CdSe/CdS/ZnO nanowires and Co3O4/ZnO, ZnO/SiC
nanowires. These multifunctional heterostructure nanowires
showed important applications in photocatalysts, sensors,
wettability control and solar energy conversion.