The Buffer Gas Influence Rate on Absolute Cu Atoms Density with regard to Deposition

The absolute Cu atoms density in Cu(2S1/2ÔåÉ2P1/2) ground state has been measured by Resonance Optical Absorption (ROA) technique in a DC magnetron sputtering deposition with argon. We measured these densities under variety of operation conditions: pressure from 0.6 μbar to 14 μbar, input power from 10W to 200W and N2 mixture from 0% to 100%. For measuring the gas temperature, we used the simulation of N2 rotational spectra with a special computer code. The absolute number density of Cu atoms decreases with increasing the N2 percentage of buffer gas at any conditions of this work. But the deposition rate, is not decreased with the same manner. The deposition rate variation is very small and in the limit of quartz balance measuring equipment accuracy. So we conclude that decrease in the absolute number density of Cu atoms in magnetron plasma has not a big effect on deposition rate, because the diffusion of Cu atoms to the chamber volume and deviation of Cu atoms from direct path (towards the substrate) decreases with increasing of N2 percentage of buffer gas. This is because of the lower mass of N2 atoms compared to the argon ones.

Influence of UV Treatment on the Electrooptical Properties of Indium Tin Oxide Films Used in Flexible Displays

Indium-tin oxide films are deposited by low plasma temperature RF sputtering on highly flexible modification of glycol polyethyleneterephtalate substrates. The produced layers are characterized with transparency over 82 % and sheet resistance of 86.9 Ω/square. The film’s conductivity was further improved by additional UV illumination from light source (365 nm), having power of 250 W. The influence of the UV exposure dose on the structural and electro-optical properties of ITO was investigated. It was established that the optimum time of illumination is 10 minutes and further UV treatment leads to polymer substrates degradation. Structural and bonds type analysis show that at longer treatment carbon atoms release and diffuse into ITO films, which worsen their electrical behavior. For the optimum UV dose the minimum sheet resistance was measured to be 19.2 Ω/square, and the maximum transparency remained almost unchanged – above 82 %.

Inductance Characteristic of Annealed Titanium Dioxide on Silicon Substrate

The control of oxygen flow rate during growth of titanium dioxide by mass flow controller in DC plasma sputtering growth system is studied. The impedance of TiO2 films for inductance effect is influenced by annealing time and oxygen flow rate. As annealing time is increased, the inductance of TiO2 film is the more. The growth condition of optimum and maximum inductance for TiO2 film to serve as sensing device are oxygen flow rate of 15 sccm and large annealing time. The large inductance of TiO2 film will be adopted to fabricate the biosensor to obtain the high sensitivity of sensing in biology.

Optical and Structural Properties of a ZnS Buffer Layer Fabricated with Deposition Temperature of RF Magnetron Sputtering System

Optical properties of sputter-deposited ZnS thin films were investigated as potential replacements for CBD(chemical bath deposition) CdS buffer layers in the application of CIGS solar cells. ZnS thin films were fabricated on glass substrates at RT, 150oC, 200oC, and 250oC with 50 sccm Ar gas using an RF magnetron sputtering system. The crystal structure of the thin film is found to be zinc blende (cubic) structure. Lattice parameter of ZnS is slightly larger than CdS on the plane and thus better matched with that of CIGS. Within a 400-800 nm wavelength region, the average transmittance was larger than 75%. When the deposition temperature of the thin film was increased, the blue shift phenomenon was enhanced. Band gap energy of the ZnS thin film tended to increase as the deposition temperature increased. ZnS thin film is a promising material system for the CIGS buffer layer, in terms of ease of processing, low cost, environmental friendliness, higher transparency, and electrical properties

Deposition Rate and Energy Enhancements of TiN Thin-Film in a Magnetized Sheet Plasma Source

Titanium nitride (TiN) has been synthesized using the sheet plasma negative ion source (SPNIS). The parameters used for its effective synthesis has been determined from previous experiments and studies. In this study, further enhancement of the deposition rate of TiN synthesis and advancement of the SPNIS operation is presented. This is primarily achieved by the addition of Sm-Co permanent magnets and a modification of the configuration in the TiN deposition process. The magnetic enhancement is aimed at optimizing the sputtering rate and the sputtering yield of the process. The Sm-Co permanent magnets are placed below the Ti target for better sputtering by argon. The Ti target is biased from –250V to – 350V and is sputtered by Ar plasma produced at discharge current of 2.5–4A and discharge potential of 60–90V. Steel substrates of dimensions 20x20x0.5mm3 were prepared with N2:Ar volumetric ratios of 1:3, 1:5 and 1:10. Ocular inspection of samples exhibit bright gold color associated with TiN. XRD characterization confirmed the effective TiN synthesis as all samples exhibit the (200) and (311) peaks of TiN and the non-stoichiometric Ti2N (220) facet. Cross-sectional SEM results showed increase in the TiN deposition rate of up to 0.35μm/min. This doubles what was previously obtained [1]. Scanning electron micrograph results give a comparative morphological picture of the samples. Vickers hardness results gave the largest hardness value of 21.094GPa.

Removal of Hydrogen Sulfide in Terms of Scrubbing Techniques using Silver Nano-Particles

Silver nano-particles have been used for antibacterial purpose and it is also believed to have removal of odorous compounds, oxidation capacity as a metal catalyst. In this study, silver nano-particles in nano sizes (5-30 nm) were prepared on the surface of NaHCO3, the supporting material, using a sputtering method that provided high silver content and minimized conglomerating problems observed in the common AgNO3 photo-deposition method. The silver nano-particles were dispersed by dissolving Ag-NaHCO3 into water, and the dispersed silver nano-particles in the aqueous phase were applied to remove inorganic odor compounds, H2S, in a scrubbing reactor. Hydrogen sulfide in the gas phase was rapidly removed by the silver nano-particles, and the concentration of sulfate (SO4 2-) ion increased with time due to the oxidation reaction by silver as a catalyst. Consequently, the experimental results demonstrated that the silver nano-particles in the aqueous solution can be successfully applied to remove odorous compounds without adding additional energy sources and producing any harmful byproducts

Nugget Formation during Resistance Spot Welding using Finite Element Model

Resistance spot welding process comprises of electric, thermal and mechanical phenomenon, which makes this process complex and highly non-linear and thus, it becomes difficult to model it. In order to obtain good weld nugget during spot welding, hit and trial welds are usually done which is very costly. Therefore the numerical simulation research has been conducted to understand the whole process. In this paper three different cases were analyzed by varying the tip contact area and it was observed that, with the variation of tip contact area the nugget formation at the faying surface is affected. The tip contact area of the welding electrode becomes large with long welding cycles. Therefore in order to maintain consistency of nugget formation during the welding process, the current compensation in control feedback is required. If the contact area of the welding electrode tip is reduced, a large amount of current flows through the faying surface, as a result of which sputtering occurs.

The Influence of Substrate Bias on the Mechanical Properties of a W- and S-containing DLC-based Solid-lubricant Film

A diamond-like carbon (DLC) based solid-lubricant film was designed and DLC films were successfully prepared using a microwave plasma enhanced magnetron sputtering deposition technology. Post-test characterizations including Raman spectrometry, X-ray diffraction, nano-indentation test, adhesion test, friction coefficient test were performed to study the influence of substrate bias voltage on the mechanical properties of the W- and S-doped DLC films. The results indicated that the W- and S-doped DLC films also had the typical structure of DLC films and a better mechanical performance achieved by the application of a substrate bias of -200V.

Effects of Annealing Treatment on Optical Properties of Anatase TiO2 Thin Films

In this investigation, anatase TiO2 thin films were grown by radio frequency magnetron sputtering on glass substrates at a high sputtering pressure and room temperature. The anatase films were then annealed at 300-600 °C in air for a period of 1 hour. To examine the structure and morphology of the films, X-ray diffraction (XRD) and atomic force microscopy (AFM) methods were used respectively. From X-ray diffraction patterns of the TiO2 films, it was found that the as-deposited film showed some differences compared with the annealed films and the intensities of the peaks of the crystalline phase increased with the increase of annealing temperature. From AFM images, the distinct variations in the morphology of the thin films were also observed. The optical constants were characterized using the transmission spectra of the films obtained by UV-VIS-IR spectrophotometer. Besides, optical thickness of the film deposited at room temperature was calculated and cross-checked by taking a cross-sectional image through SEM. The optical band gaps were evaluated through Tauc model. It was observed that TiO2 films produced at room temperatures exhibited high visible transmittance and transmittance decreased slightly with the increase of annealing temperatures. The films were found to be crystalline having anatase phase. The refractive index of the films was found from 2.31-2.35 in the visible range. The extinction coefficient was nearly zero in the visible range and was found to increase with annealing temperature. The allowed indirect optical band gap of the films was estimated to be in the range from 3.39 to 3.42 eV which showed a small variation. The allowed direct band gap was found to increase from 3.67 to 3.72 eV. The porosity was also found to decrease at a higher annealing temperature making the film compact and dense.

Energetic Considerations for Sputter Deposition Processes

Sputter deposition processes, especially for sputtering from metal targets, are well investigated. For practical reasons, i.e. for industrial processes, energetic considerations for sputter deposition are useful in order to optimize the sputtering process. In particular, for substrates at floating conditions it is required to obtain energetic conditions during film growth that enables sufficient dense metal films of good quality. The influence of ion energies, energy density and momentum transfer is thus examined both for sputtering at the target as well as during film growth. Different regimes dominated by ion energy, energy density and momentum transfer were identified by using different plasma sources and by varying power input, pressure and bias voltage.

Effects of Mo Thickness on the Properties of AZO/Mo/AZO Multilayer Thin Films

In this paper, we proposed the effects of Mo thickness on the properties of AZO/Mo/AZO multilayer thin films for opto-electronics applications. The structural, optical and electrical properties of AZO/Mo/AZO thin films were investigated. Optimization of the thin films coatings resulted with low resistivity of 9.98 × 10-5 )-cm, mobility of 12.75 cm2/V-s, carrier concentration of 1.05 × 1022 cm-3, maximum transmittance of 79.13% over visible spectrum of 380 – 780 nm and Haacke figure of merit (FOM) are 5.95 × 10-2 )-1 under Mo layer thickness of 15 nm. These results indicate an alternative candidate for use as a transparent electrode in solar cells and various displays applications.

Work Function Engineering of Functionally Graded ZnO+Ga2O3 Thin Film for Solar Cell and Organic Light Emitting Diodes Applications

ZnO+Ga2O3 functionally graded thin films (FGTFs) were examined for their potential use as Solar cell and organic light emitting diodes (OLEDs). FGTF transparent conducting oxides (TCO) were fabricated by combinatorial RF magnetron sputtering. The composition gradient was controlled up to 10% by changing the plasma power of the two sputter guns. A Ga2O3+ZnO graded region was placed on the top layer of ZnO. The FGTFs showed up to 80% transmittance. Their surface resistances were reduced to < 10% by increasing the Ga2O3: pure ZnO ratio in the TCO. The FGTFs- work functions could be controlled within a range of 0.18 eV. The controlled work function is a very promising technology because it reduces the contact resistance between the anode and Hall transport layers of OLED and solar cell devices.

Characterization of Microroughness Parameters in Cu and Cu2O Nanoparticles Embedded in Carbon Film

The morphological parameter of a thin film surface can be characterized by power spectral density (PSD) functions which provides a better description to the topography than the RMS roughness and imparts several useful information of the surface including fractal and superstructure contributions. Through the present study Nanoparticle copper/carbon composite films were prepared by co-deposition of RF-Sputtering and RF-PECVD method from acetylene gas and copper target. Surface morphology of thin films is characterized by using atomic force microscopy (AFM). The Carbon content of our films was obtained by Rutherford Back Scattering (RBS) and it varied from .4% to 78%. The power values of power spectral density (PSD) for the AFM data were determined by the fast Fourier transform (FFT) algorithms. We investigate the effect of carbon on the roughness of thin films surface. Using such information, roughness contributions of the surface have been successfully extracted.