Abstract: Optical properties of sputter-deposited ZnS thin films
were investigated as potential replacements for CBD(chemical bath
deposition) CdS buffer layers in the application of CIGS solar cells.
ZnS thin films were fabricated on glass substrates at RT, 150oC, 200oC,
and 250oC with 50 sccm Ar gas using an RF magnetron sputtering
system. The crystal structure of the thin film is found to be zinc blende
(cubic) structure. Lattice parameter of ZnS is slightly larger than CdS
on the plane and thus better matched with that of CIGS. Within a
400-800 nm wavelength region, the average transmittance was larger
than 75%. When the deposition temperature of the thin film was
increased, the blue shift phenomenon was enhanced. Band gap energy
of the ZnS thin film tended to increase as the deposition temperature
increased. ZnS thin film is a promising material system for the CIGS
buffer layer, in terms of ease of processing, low cost, environmental
friendliness, higher transparency, and electrical properties
Abstract: ZnO+Ga2O3 functionally graded thin films (FGTFs)
were examined for their potential use as Solar cell and organic light
emitting diodes (OLEDs). FGTF transparent conducting oxides (TCO)
were fabricated by combinatorial RF magnetron sputtering. The
composition gradient was controlled up to 10% by changing the
plasma power of the two sputter guns. A Ga2O3+ZnO graded region
was placed on the top layer of ZnO. The FGTFs showed up to 80%
transmittance. Their surface resistances were reduced to < 10% by
increasing the Ga2O3: pure ZnO ratio in the TCO. The FGTFs- work
functions could be controlled within a range of 0.18 eV. The
controlled work function is a very promising technology because it
reduces the contact resistance between the anode and Hall transport
layers of OLED and solar cell devices.