Abstract: Many sustainable approaches to generate electric energy have emerged in the last few decades; one of them is through solar cells. Yet, this also has the disadvantage of highly polluting inorganic semiconductor manufacturing processes. Therefore, the use of molecular semiconductors must be considered. In this work, allene compounds C24H26O4 and C24H26O5 were used as dopants to manufacture semiconductor films based on PbPc by high-vacuum evaporation technique. IR spectroscopy was carried out to determine the phase and any significant chemical changes which may occur during the thermal evaporation. According to UV-visible spectroscopy and Tauc’s model, the deposition process generated thin films with an activation energy range of 1.47 eV to 1.55 eV for direct transitions and 1.29 eV to 1.33 eV for indirect transitions. These values place the manufactured films within the range of low bandgap semiconductors. The flexible devices were manufactured: polyethylene terephthalate (PET), Indium tin oxide (ITO)/organic semiconductor/Cubic Close Packed (CCP). The characterization of the devices was carried out by evaluating electrical conductivity using the four-probe collinear method. I-V curves were obtained under different lighting conditions at room temperature. OS1 (PbPc/C24H26O4) showed an Ohmic behavior, while OS2 (PbPc/C24H26O5) reached higher current values at lower voltages. The results obtained show that the semiconductor devices doped with allene compounds can be used in the manufacture of optoelectronic devices.
Abstract: Alternative electrode materials for optoelectronic devices have been widely investigated in recent years. Since indium tin oxide (ITO) is the most preferred transparent conductive electrode, producing ITO films by simple and cost-effective solution-based techniques with enhanced optical and electrical properties has great importance. In this study, single- and multi-walled carbon nanotubes (SWCNT and MWCNT) incorporated into the ITO structure to increase electrical conductivity, mechanical strength, and chemical stability. Carbon nanotubes (CNTs) were firstly functionalized by acid treatment (HNO3:H2SO4), and the thermal resistance of CNTs after functionalization was determined by thermogravimetric analysis (TGA). Thin films were then prepared by spin coating technique and characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), four-point probe measurement system and UV-Vis spectrophotometer. The effects of process parameters were compared for ITO, MWCNT-ITO, and SWCNT-ITO films. Two factors including CNT concentration and annealing temperature were considered. The UV-Vis measurements demonstrated that the transmittance of ITO films was 83.58% at 550 nm, which was decreased depending on the concentration of CNT dopant. On the other hand, both CNT dopants provided an enhancement in the crystalline structure and electrical conductivity. Due to compatible diameter and better dispersibility of SWCNTs in the ITO solution, the best result in terms of electrical conductivity was obtained by SWCNT-ITO films with the 0.1 g/L SWCNT dopant concentration and heat-treatment at 550 °C for 1 hour.
Abstract: Biosensors are playing vital role in industrial, clinical, and chemical analysis applications. Among other techniques, ZnO based biosensor is an easy approach due to its exceptional chemical and electrical properties. ZnO nanorods have positively charged isoelectric point which helps immobilize the negative charge glucose oxides (GOx). Here, we report ZnO nanorods based biosensors for the immobilization of GOx. The ZnO nanorods were grown by hydrothermal method on indium tin oxide substrate (ITO). The fabrication of biosensors was carried through batch processing using conventional photolithography. The buffer solutions of GOx were prepared in phosphate with a pH value of around 7.3. The biosensors effectively immobilized the GOx and result was analyzed by calculation of voltage and current on nanostructures.
Abstract: Zinc sulphide (ZnS) quantum dots (QDs) were synthesized successfully via simple sonochemical method. X-ray diffraction (XRD), scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM) analysis revealed the average size of QDs of the order of 3.7 nm. The band gap of the QDs was tuned to 5.2 eV by optimizing the synthesis parameters. UV-Vis absorption spectra of ZnS QD confirm the quantum confinement effect. Fourier transform infrared (FTIR) analysis confirmed the formation of single phase ZnS QDs. To fabricate the diode, blend of ZnS QDs and P3HT was prepared and the heterojunction of PEDOT:PSS and the blend was formed by spin coating on indium tin oxide (ITO) coated glass substrate. The diode behaviour of the heterojunction was analysed, wherein the ideality factor was found to be 2.53 with turn on voltage 0.75 V and the barrier height was found to be 1.429 eV. ZnS-Graphene QDs nanocomposite was characterised for the surface morphological study. It was found that the synthesized ZnS QDs appear as quasi spherical particles on the graphene sheets. The average particle size of ZnS-graphene nanocomposite QDs was found to be 8.4 nm. From voltage-current characteristics of ZnS-graphene nanocomposites, it is observed that the conductivity of the composite increases by 104 times the conductivity of ZnS QDs. Thus the addition of graphene QDs in ZnS QDs enhances the mobility of the charge carriers in the composite material. Thus, the graphene QDs, with high specific area for a large interface, high mobility and tunable band gap, show a great potential as an electron-acceptors in photovoltaic devices.
Abstract: Silver nanostructures have been successfully fabricated by using electrodeposition method onto indium-tin-oxide (ITO) substrate. Scanning electron microscopy (SEM), electrochemical impedance spectroscopy (EIS) and ultraviolet-visible spectroscopy (UV-Vis) techniques were employed for characterization of silver nanostructures. The results show nanostructures with different morphology and electrochemical properties can be obtained by various the deposition potentials and times. Electrochemical behavior of the nanostructures has been studied by using cyclic voltammetry. Silver nanostructures exhibits good electrocatalytic activity towards the reduction of H2O2. The presented electrode can be employed as sensing element for hydrogen peroxide.
Abstract: The present work reports an effect of surface- modification of indium tin oxide (ITO) particles with chemicals on their electronic conductivity properties. Examined chemicals were polyvinyl alcohol (nonionic polymer), poly(diallyl dimethyl ammonium chloride) (cationic polymer), poly(sodium 4-styrene-sulfonate) (anionic polymer), (2-aminopropyl) trimethoxy silane (APMS) (silane coupling agent with amino group), and (3-mercaptopropyl) trimethoxy silane (MPS) (silane coupling agent with thiol group). For all the examined chemicals, volume resistivities of surface-modified ITO particles did not increase much when they were aged in air at 80 oC, compared to a volume resistivity of un-surface-modified ITO particles. Increases in volume resistivities of ITO particles surface-modified with the silane coupling agents were smaller than those with the polymers, since hydrolysis of the silane coupling agents and condensation of generated silanol and OH groups on ITO particles took place to provide efficient immobilization of them on particles. The APMS gave an increase in volume resistivity smaller than the MPS, since a larger solubility in water of APMS providing a larger amount of APMS immobilized on particles.
Abstract: Nanotechnology has become the world attention in
various applications including the solar cells devices due to the
uniqueness and benefits of achieving low cost and better
performances of devices. Recently, thin film solar cells such as
Cadmium Telluride (CdTe), Copper-Indium-Gallium-diSelenide
(CIGS), Copper-Zinc-Tin-Sulphide (CZTS), and Dye-Sensitized
Solar Cells (DSSC) enhanced by nanotechnology have attracted
much attention. Thus, a compilation of nanotechnology devices
giving the progress in the solar cells has been presented. It is much
related to nanoparticles or nanocrystallines, carbon nanotubes, and
nanowires or nanorods structures.
Abstract: In the present research work we present the optical
emission studies of the Indium (In) – Tin (Sn) plasma produced by
the first (1064 nm) harmonic of an Nd: YAG nanosecond pulsed
laser. The experimentally observed line profiles of neutral Indium (In
I) and Tin (SnI) are used to extract the electron temperature (Te)
using the Boltzmann plot method. Whereas, the electron number
density (Ne) has been determined from the Stark broadening line
profile method. The Te is calculated by varying the distance from the
target surface along the line of propagation of plasma plume and also
by varying the laser irradiance. Beside we have studied the variation
of Ne as a function of laser irradiance as well as its variation with
distance from the target surface.
Abstract: The increasing demand of gallium, indium and
rare-earth elements for the production of electronics, e.g. solid
state-lighting, photovoltaics, integrated circuits, and liquid crystal
displays, will exceed the world-wide supply according to current
forecasts. Recycling systems to reclaim these materials are not yet in
place, which challenges the sustainability of these technologies. This
paper proposes a multispectral imaging system as a basis for a vision
based recognition system for valuable components of electronics
waste. Multispectral images intend to enhance the contrast of images
of printed circuit boards (single components, as well as labels) for
further analysis, such as optical character recognition and entire
printed circuit board recognition. The results show, that a higher
contrast is achieved in the near infrared compared to ultraviolett and
visible light.
Abstract: The contact resistance between source/drain electrodes
and semiconductor layer is an important parameter affecting electron
transporting performance in the thin film transistor (TFT). In this
work, we introduced a transparent and the solution prossable
single-walled carbon nanotube (SWCNT)/Al-doped ZnO nano particle
(AZO NP) bilayer electrodes showing low contact resistance with
indium-oxide (In2O3) sol gel thin film. By inserting low work function
AZO NPs into the interface between the SWCNTs and the In2O3 which
has a high energy barrier, we could obtain an electrical Ohmic contact
between them. Finally, with the SWCNT-AZO NP bilayer electrodes,
we successfully fabricated a TFT showing a field effect mobility of
5.38 cm2/V·s at 250°C.
Abstract: In this study, the Mo-electrode thin films were deposited using two-stepped process and the high purity copper indium selenide-based powder (CuInSe2, CIS) was fabricated by using hydrothermal process by Nanowin Technology Co. Ltd. Because the CIS powder was aggregated into microscale particles, the CIS power was ground into nano-scale particles. 6 wt% CIS particles were mixed and dispersed into isopropyl alcohol (IPA). A new non-vacuum thin-film deposition process, spray coating method (SPM), was investigated to deposit the high-densified CIS absorber layers. 0.1 ml CIS solution was sprayed on the 20 mm×10 mm Mo/glass substrates and then the CuInSe2 thin films were annealed in a selenization furnace using N2 as atmosphere. The annealing temperature and time were set at 550oC and 5 min, and 0.0g~0.6g extra Se content was added in the furnace. The influences of extra Se content on the densification, crystallization, resistivity (ρ), hall mobility (μ), and carrier concentration of the CIS absorber layers were well investigated in this study.
Abstract: InGaAsN and GaAsN epitaxial layers with similar
nitrogen compositions in a sample were successfully grown on a
GaAs (001) substrate by solid source molecular beam epitaxy. An
electron cyclotron resonance nitrogen plasma source has been used to
generate atomic nitrogen during the growth of the nitride layers. The
indium composition changed from sample to sample to give
compressive and tensile strained InGaAsN layers. Layer
characteristics have been assessed by high-resolution x-ray
diffraction to determine the relationship between the lattice constant
of the GaAs1-yNy layer and the fraction x of In. The objective was to
determine the In fraction x in an InxGa1-xAs1-yNy epitaxial layer which
exactly cancels the strain present in a GaAs1-yNy epitaxial layer with
the same nitrogen content when grown on a GaAs substrate.
Abstract: Indium-tin oxide films are deposited by low plasma
temperature RF sputtering on highly flexible modification of glycol
polyethyleneterephtalate substrates. The produced layers are
characterized with transparency over 82 % and sheet resistance of
86.9 Ω/square. The film’s conductivity was further improved by
additional UV illumination from light source (365 nm), having power
of 250 W. The influence of the UV exposure dose on the structural
and electro-optical properties of ITO was investigated. It was
established that the optimum time of illumination is 10 minutes and
further UV treatment leads to polymer substrates degradation.
Structural and bonds type analysis show that at longer treatment
carbon atoms release and diffuse into ITO films, which worsen their
electrical behavior. For the optimum UV dose the minimum sheet
resistance was measured to be 19.2 Ω/square, and the maximum
transparency remained almost unchanged – above 82 %.
Abstract: In situ observation of absorption spectral change of
heptil viologen cation radical (HV+.) was performed by slab optical
waveguide (SOWG) spectroscopy utilizing indium-tin-oxide (ITO)
electrodes. Synchronizing with electrochemical techniques, we
observed the adsorption process of HV+.on the ITO electrode. In this
study, we carried out the ITO-SOWG observations using KBr aqueous
solution containing different concentration of HV to investigate the
concentration dependent spectral change. A few specific absorption
bands, which indicated HV+.existed as both monomer and dimer on
ITO electrode surface with a monolayer or a few layers deposition,
were observed in UV-visible region. The change in the peak position
of the absorption spectra from adsorption species of HV+. were
correlated with the concentration of HV as well as the electrode
potential.
Abstract: Nanowire arrays of copper with uniform diameters have
been synthesized by potentiostatic electrochemical metal deposition
(EMD) of copper sulphate and potassium chloride solution within
the nano-channels of porous Indium-Tin Oxide (ITO), also known as
Tin doped Indium Oxide templates. The nanowires developed were
fairly continuous with diameters ranging from 110-140 nm along
the entire length. Single as well as poly-crystalline copper wires
have been prepared by application of appropriate potential during the
EMD process. Scanning electron microscopy (SEM), high resolution
transmission electron microscopy (HRTEM), small angle electron
diffraction (SAED) and atomic force microscopy (AFM) were used
to characterize the synthesized nano wires at room temperature. The
electrochemical response of synthesized products was evaluated by
cyclic voltammetry while surface energy analysis was carried out
using a Goniometer.
Abstract: Quaternary InxAlyGa1-x-yN semiconductors have
attracted much research interest because the use of this quaternary
offer the great flexibility in tailoring their band gap profile while
maintaining their lattice-matching and structural integrity. The
structural and optical properties of InxAlyGa1-x-yN alloys grown by
molecular beam epitaxy (MBE) is presented. The structural quality of
InxAlyGa1-x-yN layers was characterized using high-resolution X-ray
diffraction (HRXRD). The results confirm that the InxAlyGa1-x-yN
films had wurtzite structure and without phase separation. As the In
composition increases, the Bragg angle of the (0002) InxAlyGa1-x-yN
peak gradually decreases, indicating the increase in the lattice constant
c of the alloys. FWHM of (0002) InxAlyGa1-x-yN decreases with
increasing In composition from 0 to 0.04, that could indicate the
decrease of quality of the samples due to point defects leading to
non-uniformity of the epilayers. UV-VIS spectroscopy have been used
to study the energy band gap of InxAlyGa1-x-yN. As the indium (In)
compositions increases, the energy band gap decreases. However, for
InxAlyGa1-x-yN with In composition of 0.1, the band gap shows a
sudden increase in energy. This is probably due to local alloy
compositional fluctuations in the epilayer. The bowing parameter
which appears also to be very sensitive on In content is investigated
and obtained b = 50.08 for quaternary InxAlyGa1-x-yN alloys. From
photoluminescence (PL) measurement, green luminescence (GL)
appears at PL spectrum of InxAlyGa1-x-yN, emitted for all x at ~530 nm
and it become more pronounced as the In composition (x) increased,
which is believed cause by gallium vacancies and related to isolated
native defects.
Abstract: We have fabricated a-IGZO TFT and investigated the
stability under positive DC and AC bias stress. The threshold voltage
of a-IGZO TFT shifts positively under those biases, and that reduces
on-current. For this reason, conventional shift-register circuit
employing TFTs which stressed by positive bias will be unstable, may
do not work properly. We have designed a new 6-transistor
shift-register, which has less transistors than prior circuits. The TFTs
of the proposed shift-register are not suffering from positive DC or AC
stress, mainly kept unbiased. Despite the compact design, the stable
output signal was verified through the SPICE simulation even under
RC delay of clock signal.