Abstract: Many sustainable approaches to generate electric energy have emerged in the last few decades; one of them is through solar cells. Yet, this also has the disadvantage of highly polluting inorganic semiconductor manufacturing processes. Therefore, the use of molecular semiconductors must be considered. In this work, allene compounds C24H26O4 and C24H26O5 were used as dopants to manufacture semiconductor films based on PbPc by high-vacuum evaporation technique. IR spectroscopy was carried out to determine the phase and any significant chemical changes which may occur during the thermal evaporation. According to UV-visible spectroscopy and Tauc’s model, the deposition process generated thin films with an activation energy range of 1.47 eV to 1.55 eV for direct transitions and 1.29 eV to 1.33 eV for indirect transitions. These values place the manufactured films within the range of low bandgap semiconductors. The flexible devices were manufactured: polyethylene terephthalate (PET), Indium tin oxide (ITO)/organic semiconductor/Cubic Close Packed (CCP). The characterization of the devices was carried out by evaluating electrical conductivity using the four-probe collinear method. I-V curves were obtained under different lighting conditions at room temperature. OS1 (PbPc/C24H26O4) showed an Ohmic behavior, while OS2 (PbPc/C24H26O5) reached higher current values at lower voltages. The results obtained show that the semiconductor devices doped with allene compounds can be used in the manufacture of optoelectronic devices.
Abstract: In this study we present the effect of elevated
temperatures from 300K to 400K on the electrical properties of
copper Phthalocyanine (CuPc) based organic field effect transistors
(OFET). Thin films of organic semiconductor CuPc (40nm) and
semitransparent Al (20nm) were deposited in sequence, by vacuum
evaporation on a glass substrate with previously deposited Ag source
and drain electrodes with a gap of 40 μm. Under resistive mode of
operation, where gate was suspended it was observed that drain
current of this organic field effect transistor (OFET) show an
increase with temperature. While in grounded gate condition metal
(aluminum) – semiconductor (Copper Phthalocyanine) Schottky
junction dominated the output characteristics and device showed
switching effect from low to high conduction states like Zener diode
at higher bias voltages. This threshold voltage for switching effect
has been found to be inversely proportional to temperature and shows
an abrupt decrease after knee temperature of 360K. Change in
dynamic resistance (Rd = dV/dI) with respect to temperature was
observed to be -1%/K.
Abstract: IFP Group Technology “Sulfrex process" was used in
Iran-s South Pars Gas Complex Refineries for removing sulfur
compounds such as mercaptans, carbonyl sulfide and hydrogen
sulfide, which uses sulfonated cobalt phthalocyanine dispersed in
alkaline solution as catalyst. In this technology, catalyst and alkaline
solution were used circularly. However the stability of catalyst due to
effect of some parameters would reduce with the running of the unit
and therefore sweetening efficiency would be decreased. Hence, the
aim of this research is study the factors effecting on the stability of
catalyst.
Abstract: This paper presents a spectroscopic study on doping
of Vanadyl pathalocyanine (VOPc) by [6,6]-phenyl C61 butyric acid
methyl ester (PCBM). The films are characterized by UV/Vis/NIR
spectroscopy. A drastic increase in the absorption coefficient has
been observed with increasing dopant concentration. Optical
properties of VOPc:PCBM films deposited by spin coating technique
were studied in detail. Optical band gap decreased with the PCBM
incorporation in the VOPc film. Optical band gap calculated from the
absorption spectra decreased from 3.32 eV to 3.26 eV with a
variation of 0–75 % of PCBM concentration in the VOPC films.
Abstract: An organic bulk heterojunction (BHJ) was fabricated using a blended film containing Copper (II) tetrakis(4-acumylphenoxy) phthalocyanine (Tc-CuPc) along with [6,6]-Phenyl C61 butyric acid methyl ester (PCBM). Weight ratio between Tc-CuPc and PCBM was 1:1. The electrical properties of Tc-CuPc: PCBM BHJ were examined. Rectifying nature of the BHJ was displayed by current-voltage (I-V) curves, recorded in dark and at various temperatures. At low voltages, conduction was ohmic succeeded by space-charge limiting current (SCLC) conduction at higher voltages in which exponential trap distribution was dominant. Series resistance, shunt resistance, ideality factor, effective barrier height and mobility at room temperature were found to be 526 4, 482 k4, 3.7, 0.17 eV and 2×10-7 cm2V-1s-1 respectively. Temperature effect towards different BHJ parameters was observed under dark condition.
Abstract: This paper presents a comparative study on
Vanadyl Phthalocyanine (VOPc) thin films deposited by thermal
evaporation and spin coating techniques. The samples
were prepared on cleaned glass substrates and annealed at
various temperatures ranging form 95oC to 155oC. To obtain
the morphological and structural properties of VOPc thin
films, X-ray diffraction (XRD) technique and atomic force
microscopy (AFM) have been implied. The AFM topographic
images show a very slight difference in the thermally grown
films, before and after annealing, however best results are
achieved for the spin-cast film annealed at 125oC. The XRD
spectra show no existence of the sharp peaks, suggesting the
material to be amorphous. The humps in the XRD patterns
indicate the presence of some crystallites.