Synthesis and Characterization of Non-Aqueous Electrodeposited ZnSe Thin Film
A nanocrystalline thin film of ZnSe was successfully
electrodeposited on copper substrate using a non-aqueous solution
and subsequently annealed in air at 400°C. XRD analysis indicates
the polycrystalline deposit of (111) plane in both the cases. The
sharpness of the peak increases due to annealing of the film and
average grain size increases to 20 nm to 27nm. SEM photograph
indicate that grains are uniform and densely distributed over the
surface. Annealing increases the average grain size by 20%. The EDS
spectroscopy shows the ratio of Zn & Se is 1.1 in case of annealed
film. AFM analysis indicates the average roughness of the film
reduces from 181nm to 165nm due to annealing of the film. The
bandgap also decreases from 2.71eV to 2.62eV.
[1] R. Chanrdamohan, A. Kathalingam, K. Kumar, D. Kalyanaraman, and
T. Mahalingam, “Studies on Electrosynthesized Semiconducting Zinc
Selenide Thin Films,” Ionics, vol.10, pp.297, 2004.
[2] H. Morkoe, S. Strite, G.B. Gao, M.E. Lin, B. Sverdlov, and M. Burns,
“Large bandgap SiC, III-V nitride and II-VI ZnSe-based semiconductor
device technologies,” J. Appl. Phys., vol. 76, pp 1363, 1994.
[3] K.R. Murali, S. Dhanapandiyana, and C. Manoharana, “Pulse
Electrodeposited Zinc Selenide Films and Their Characteristics,”
Chalcogenide Lett., vol. 6, pp-51, 2009.
[4] J.M. Dona, and J. Herrero, “Chemical-Bath Deposition of ZnSe Thin
Films: Process and Material Characterization,” J. Electrochem. Soc., vol.
142, pp-764, 1995.
[5] N.J. Suthan Kissinger, N. Velmurugan, and K. Perumal, “Substratetemperature-
dependent Structural and Optical Properties of ZnSe Thin
Films Fabricated by Using an Electron Beam Evaporation Technique,” J.
Korean Phys. Soc., Vol. 55, pp- 1577, 2009.
[6] T. Mahalingam, A. Kathalingam, S. Lee, S. Moon, and Y.D. Kim,
“Studies of electrosynthesized Zinc Selenide thin films,” J. New Mater.
Electrochem. Sys., Vol. 10, pp-15, 2007.
[7] M.C. Harris Liao, Y.H. Chang, Y.F. Chen, J.W. Hsu, J.M. Lin, and W.C.
Chou, "Fabrication of ZnSe Quantum Dots Under Volmer-Weber Mode
by Metalorganic Chemical Vapor Deposition," Appl. Phys. Lett., Vol.
70, pp-2256, 1997.
[8] H. Li, and W. Jie,"Growth and characterizations of bulk ZnSe single
crystal by chemical vapor transport," J. Cryst. Growth, Vol. 257, pp-110,
2003.[9] N. Sankar, and K. Ramachandran,"On the thermal and optical properties
of ZnSe and doped ZnSe crystals grown by PVT," J. Cryst. Growth, Vol.
247, pp-157, 2003.
[10] E. Guziewicz, M. Godlewski, K. Kopalko, E. Lus-akowska, E.
Dynowska, M. Guziewicz, M.M. Godlewski, and M. Phillips, "Atomic
layer deposition of thin films of ZnSe—structural and optical
characterization, Thin Solid Films , Vol. 446, pp-446, 2004.
[11] A. Rizzo, M. A. Tagliente, L. Caneve, and S. Scaglione,"The influence
of the momentum transfer on the structural and optical properties of
ZnSe thin films prepared by r.f. magnetron sputtering," Thin Solid
Films, Vol. 368, pp-8, 2000.
[12] R.K. Aloney, J.K. Dongre, B.E. Chandra, and M. Ramrakhi-ani,
"Photoelectrochemical Solar Cells Based on Electro-codeposited
CdSe/ZnSe Double Layer Photoelectrodes," Chalcogenide Lett., Vol. 6,
pp-569, 2009.
[13] K. Singh, and J.P. Rai,"Electrosynthesis and photoelectroactivity of
polycrystalline p-zinc selenide," Phys. Status Solidi, Vol. A 99, pp-257,
1987.
[14] C. Natarajan, M. Sharon, C. Levy-Clement, and M. Neu-mann-Spallart,
"Electrodeposition of zinc selenide," Thin Solid Films, Vol. 237, pp-
118, 1994.
[15] A. P. Samantilleke, M. H. Boyle, J. Young, and I. M. Dharma-dasa,
"Electrodeposition of n-type and p-type ZnSe thin films for applications
in large area optoelectronic devices," J. Mater. Sci. Mater. Electron.,
Vol. 9, pp- 2891998.
[16] G. Riveros, H. Gomez, R. Henriquez, R. Schrebler, R.E. Marotti, and
E.A. Dalchiele, "Electrodeposition and characterization of ZnSe
semiconductor thin films," Sol. Energy Mater. Sol. Cells, Vol.70, pp-
255, 2001.
[17] M. Bouroushian, T. Kosanovic, Z. Loizos, and Z. Spyrellis,
“Electrochemical formation of ZnSe from acidic aqueous solutions,” J.
Solid State Electrochem., Vol. 6, pp-272, 2002.
[18] Dori. Gal, and G. Hodes,"Electrochemical Deposition of ZnSe and
(Zn,Cd)Se Films from Nonaqueous Solutions," J. Electrochem. Soc.,
Vol. 147,pp- 1825, 2000.
[19] K.R. Murali, S. Kala, and P. Elango,"Characteristics of ZnS films pulse
plated using non-aqueous electrolytes," J. Mater. Sci. Mater. Electron.,
Vol. 21, pp- 1293, 2010.
[20] R. Kowalik, P. Zabinski, and K. Fitzner,"Electrodeposition of ZnSe,"
Electrochim. Acta, Vol.53, pp-6184, 2008.
[21] G. Riveros, H. Gomez, R. Henriquez, R. Sshrebler, and R. Cordova,
"Electrodeposition and characterization of ZnX (X=Se,Te) semicond.
Thin Films," Bol. Soc. Chil.Quim., Vol. 47, pp-411, 2002.
[1] R. Chanrdamohan, A. Kathalingam, K. Kumar, D. Kalyanaraman, and
T. Mahalingam, “Studies on Electrosynthesized Semiconducting Zinc
Selenide Thin Films,” Ionics, vol.10, pp.297, 2004.
[2] H. Morkoe, S. Strite, G.B. Gao, M.E. Lin, B. Sverdlov, and M. Burns,
“Large bandgap SiC, III-V nitride and II-VI ZnSe-based semiconductor
device technologies,” J. Appl. Phys., vol. 76, pp 1363, 1994.
[3] K.R. Murali, S. Dhanapandiyana, and C. Manoharana, “Pulse
Electrodeposited Zinc Selenide Films and Their Characteristics,”
Chalcogenide Lett., vol. 6, pp-51, 2009.
[4] J.M. Dona, and J. Herrero, “Chemical-Bath Deposition of ZnSe Thin
Films: Process and Material Characterization,” J. Electrochem. Soc., vol.
142, pp-764, 1995.
[5] N.J. Suthan Kissinger, N. Velmurugan, and K. Perumal, “Substratetemperature-
dependent Structural and Optical Properties of ZnSe Thin
Films Fabricated by Using an Electron Beam Evaporation Technique,” J.
Korean Phys. Soc., Vol. 55, pp- 1577, 2009.
[6] T. Mahalingam, A. Kathalingam, S. Lee, S. Moon, and Y.D. Kim,
“Studies of electrosynthesized Zinc Selenide thin films,” J. New Mater.
Electrochem. Sys., Vol. 10, pp-15, 2007.
[7] M.C. Harris Liao, Y.H. Chang, Y.F. Chen, J.W. Hsu, J.M. Lin, and W.C.
Chou, "Fabrication of ZnSe Quantum Dots Under Volmer-Weber Mode
by Metalorganic Chemical Vapor Deposition," Appl. Phys. Lett., Vol.
70, pp-2256, 1997.
[8] H. Li, and W. Jie,"Growth and characterizations of bulk ZnSe single
crystal by chemical vapor transport," J. Cryst. Growth, Vol. 257, pp-110,
2003.[9] N. Sankar, and K. Ramachandran,"On the thermal and optical properties
of ZnSe and doped ZnSe crystals grown by PVT," J. Cryst. Growth, Vol.
247, pp-157, 2003.
[10] E. Guziewicz, M. Godlewski, K. Kopalko, E. Lus-akowska, E.
Dynowska, M. Guziewicz, M.M. Godlewski, and M. Phillips, "Atomic
layer deposition of thin films of ZnSe—structural and optical
characterization, Thin Solid Films , Vol. 446, pp-446, 2004.
[11] A. Rizzo, M. A. Tagliente, L. Caneve, and S. Scaglione,"The influence
of the momentum transfer on the structural and optical properties of
ZnSe thin films prepared by r.f. magnetron sputtering," Thin Solid
Films, Vol. 368, pp-8, 2000.
[12] R.K. Aloney, J.K. Dongre, B.E. Chandra, and M. Ramrakhi-ani,
"Photoelectrochemical Solar Cells Based on Electro-codeposited
CdSe/ZnSe Double Layer Photoelectrodes," Chalcogenide Lett., Vol. 6,
pp-569, 2009.
[13] K. Singh, and J.P. Rai,"Electrosynthesis and photoelectroactivity of
polycrystalline p-zinc selenide," Phys. Status Solidi, Vol. A 99, pp-257,
1987.
[14] C. Natarajan, M. Sharon, C. Levy-Clement, and M. Neu-mann-Spallart,
"Electrodeposition of zinc selenide," Thin Solid Films, Vol. 237, pp-
118, 1994.
[15] A. P. Samantilleke, M. H. Boyle, J. Young, and I. M. Dharma-dasa,
"Electrodeposition of n-type and p-type ZnSe thin films for applications
in large area optoelectronic devices," J. Mater. Sci. Mater. Electron.,
Vol. 9, pp- 2891998.
[16] G. Riveros, H. Gomez, R. Henriquez, R. Schrebler, R.E. Marotti, and
E.A. Dalchiele, "Electrodeposition and characterization of ZnSe
semiconductor thin films," Sol. Energy Mater. Sol. Cells, Vol.70, pp-
255, 2001.
[17] M. Bouroushian, T. Kosanovic, Z. Loizos, and Z. Spyrellis,
“Electrochemical formation of ZnSe from acidic aqueous solutions,” J.
Solid State Electrochem., Vol. 6, pp-272, 2002.
[18] Dori. Gal, and G. Hodes,"Electrochemical Deposition of ZnSe and
(Zn,Cd)Se Films from Nonaqueous Solutions," J. Electrochem. Soc.,
Vol. 147,pp- 1825, 2000.
[19] K.R. Murali, S. Kala, and P. Elango,"Characteristics of ZnS films pulse
plated using non-aqueous electrolytes," J. Mater. Sci. Mater. Electron.,
Vol. 21, pp- 1293, 2010.
[20] R. Kowalik, P. Zabinski, and K. Fitzner,"Electrodeposition of ZnSe,"
Electrochim. Acta, Vol.53, pp-6184, 2008.
[21] G. Riveros, H. Gomez, R. Henriquez, R. Sshrebler, and R. Cordova,
"Electrodeposition and characterization of ZnX (X=Se,Te) semicond.
Thin Films," Bol. Soc. Chil.Quim., Vol. 47, pp-411, 2002.
@article{"International Journal of Chemical, Materials and Biomolecular Sciences:69378", author = "S. R. Kumar and Shashikant Rajpal", title = "Synthesis and Characterization of Non-Aqueous Electrodeposited ZnSe Thin Film", abstract = "A nanocrystalline thin film of ZnSe was successfully
electrodeposited on copper substrate using a non-aqueous solution
and subsequently annealed in air at 400°C. XRD analysis indicates
the polycrystalline deposit of (111) plane in both the cases. The
sharpness of the peak increases due to annealing of the film and
average grain size increases to 20 nm to 27nm. SEM photograph
indicate that grains are uniform and densely distributed over the
surface. Annealing increases the average grain size by 20%. The EDS
spectroscopy shows the ratio of Zn & Se is 1.1 in case of annealed
film. AFM analysis indicates the average roughness of the film
reduces from 181nm to 165nm due to annealing of the film. The
bandgap also decreases from 2.71eV to 2.62eV.
", keywords = "Electrodeposition, Non-aqueous medium, SEM,
XRD.", volume = "9", number = "3", pages = "469-4", }
