Scholarly

Characterization of the LMOS with Different Channel Structure

Year: 2013 Volume: 7 Issue: 6 989 - 992 Pages

Abstract: In this paper, we propose a novel metal oxide semiconductor field effect transistor with L-shaped channel structure (LMOS), and several type of L-shaped structures are also designed, studied and compared with the conventional MOSFET device for the same average gate length (Lavg). The proposed device electrical characteristics are analyzed and evaluated by three dimension (3-D) ISE-TCAD simulator. It can be confirmed that the LMOS devices have higher on-state drain current and both lower drain-induced barrier lowering (DIBL) and subthreshold swing (S.S.) than its conventional counterpart has. In addition, the transconductance and voltage gain properties of the LMOS are also improved.

Improvement in Silicon on Insulator Devices using Strained Si/SiGe Technology for High Performance in RF Integrated Circuits

Year: 2010 Volume: 4 Issue: 12 1776 - 1779 Pages

Abstract: RF performance of SOI CMOS device has attracted significant amount of interest recently. In order to improve RF parameters, Strained Si/Relaxed Si0.8Ge0.2 investigated as a replacement for Si technology .Enhancement of carrier mobility associated with strain engineering makes Strained Si a promising candidate for improving RF performance of CMOS technology. From the simulation, the cut-off frequency is estimated to be 224 GHZ, whereas in SOI at similar bias is about 188 GHZ. Therefore, Strained Si exhibits 19% improvement in cut-off frequency over similar Si counterpart. In this paper, Ion/Ioff ratio is studied as one of the key parameters in logic and digital application. Strained Si/SiGe demonstrates better Ion/Ioff characteristic than SOI, in similar channel length of 100 nm.Another important key analog figures of merit such as Early Voltage (VEA) ,transconductance vs drain current (gm /Ids) are studied. They introduce the efficiency of the devices to convert dc power into ac frequency.

Design of Folded Cascode OTA in Different Regions of Operation through gm/ID Methodology

Year: 2008 Volume: 2 Issue: 9 1930 - 1935 Pages

Abstract: This paper presents an optimized methodology to folded cascode operational transconductance amplifier (OTA) design. The design is done in different regions of operation, weak inversion, strong inversion and moderate inversion using the gm/ID methodology in order to optimize MOS transistor sizing. Using 0.35μm CMOS process, the designed folded cascode OTA achieves a DC gain of 77.5dB and a unity-gain frequency of 430MHz in strong inversion mode. In moderate inversion mode, it has a 92dB DC gain and provides a gain bandwidth product of around 69MHz. The OTA circuit has a DC gain of 75.5dB and unity-gain frequency limited to 19.14MHZ in weak inversion region.

Application of Femtosecond Laser pulses for Nanometer Accuracy Profiling of Quartz and Diamond Substrates and for Multi-Layered Targets and Thin-Film Conductors Processing

Year: 2011 Volume: 5 Issue: 7 974 - 976 Pages

Abstract: Research results and optimal parameters investigation of laser cut and profiling of diamond and quartz substrates by femtosecond laser pulses are presented. Profiles 10 μm in width, ~25 μm in depth and several millimeters long were made. Investigation of boundaries quality has been carried out with the use of AFM «Vecco». Possibility of technological formation of profiles and micro-holes in diamond and quartz substrates with nanometer-scale boundaries is shown. Experimental results of multilayer dielectric cover treatment are also presented. Possibility of precise upper layer (thickness of 70–140 nm) removal is demonstrated. Processes of thin metal film (60 nm and 350 nm thick) treatment are considered. Isolation tracks (conductance ~ 10-11 S) 1.6–2.5 μm in width in conductive metal layers are formed.

A Digitally Programmable Voltage-mode Multifunction Biquad Filter with Single-Output

Year: 2012 Volume: 6 Issue: 9 958 - 962 Pages

Abstract: This article proposes a voltage-mode multifunction filter using differential voltage current controllable current conveyor transconductance amplifier (DV-CCCCTA). The features of the circuit are that: the quality factor and pole frequency can be tuned independently via the values of capacitors: the circuit description is very simple, consisting of merely 1 DV-CCCCTA, and 2 capacitors. Without any component matching conditions, the proposed circuit is very appropriate to further develop into an integrated circuit. Additionally, each function response can be selected by suitably selecting input signals with digital method. The PSpice simulation results are depicted. The given results agree well with the theoretical anticipation.

Two-dimensional Analytical Drain Current Model for Multilayered-Gate Material Engineered Trapezoidal Recessed Channel(MLGME-TRC) MOSFET: a Novel Design

Year: 2010 Volume: 4 Issue: 4 723 - 727 Pages

Abstract: In this paper, for the first time, a two-dimensional (2D) analytical drain current model for sub-100 nm multi-layered gate material engineered trapezoidal recessed channel (MLGMETRC) MOSFET: a novel design is presented and investigated using ATLAS and DEVEDIT device simulators, to mitigate the large gate leakages and increased standby power consumption that arise due to continued scaling of SiO2-based gate dielectrics. The twodimensional (2D) analytical model based on solution of Poisson-s equation in cylindrical coordinates, utilizing the cylindrical approximation, has been developed which evaluate the surface potential, electric field, drain current, switching metric: ION/IOFF ratio and transconductance for the proposed design. A good agreement between the model predictions and device simulation results is obtained, verifying the accuracy of the proposed analytical model.

Analysis of a Novel Strained Silicon RF LDMOS

Year: 2010 Volume: 4 Issue: 9 1357 - 1361 Pages

Abstract: In this paper we propose a novel RF LDMOS structure which employs a thin strained silicon layer at the top of the channel and the N-Drift region. The strain is induced by a relaxed Si0.8 Ge0.2 layer which is on top of a compositionally graded SiGe buffer. We explain the underlying physics of the device and compare the proposed device with a conventional LDMOS in terms of energy band diagram and carrier concentration. Numerical simulations of the proposed strained silicon laterally diffused MOS using a 2 dimensional device simulator indicate improvements in saturation and linear transconductance, current drivability, cut off frequency and on resistance. These improvements are however accompanied with a suppression in the break down voltage.

Implementation of Second Order Current- Mode Quadrature Sinusoidal Oscillator with Current Controllability

Year: 2013 Volume: 7 Issue: 3 301 - 303 Pages

Abstract: The realization of current-mode quadrature oscillators using current controlled current conveyor transconductance amplifiers (CCCCTAs) and grounded capacitors is presented. The proposed oscillators can provide 2 sinusoidal output currents with 90º phase difference. It is enabled non-interactive dual-current control for both the condition of oscillation and the frequency of oscillation. High output impedances of the configurations enable the circuit to be cascaded without additional current buffers. The use of only grounded capacitors is ideal for integration. The circuit performances are depicted through PSpice simulations, they show good agreement to theoretical anticipation.

Simulation Study of Lateral Trench Gate Power MOSFET on 4H-SiC

Year: 2014 Volume: 8 Issue: 2 217 - 220 Pages

Abstract: A lateral trench-gate power metal-oxide-semiconductor on 4H-SiC is proposed. The device consists of two separate trenches in which two gates are placed on both sides of P-body region resulting two parallel channels. Enhanced current conduction and reduced-surface-field effect in the structure provide substantial improvement in the device performance. Using two dimensional simulations, the performance of proposed device is evaluated and compare of with that of the conventional device for same cell pitch. It is demonstrated that the proposed structure provides two times higher output current, 11% decrease in threshold voltage, 70% improvement in transconductance, 70% reduction in specific ON-resistance, 52% increase in breakdown voltage, and nearly eight time improvement in figure-of-merit over the conventional device.

First Order Filter Based Current-Mode Sinusoidal Oscillators Using Current Differencing Transconductance Amplifiers (CDTAs)

Year: 2014 Volume: 8 Issue: 7 1044 - 1048 Pages

Abstract: This article presents new current-mode oscillator circuits using CDTAs which is designed from block diagram. The proposed circuits consist of two CDTAs and two grounded capacitors. The condition of oscillation and the frequency of oscillation can be adjusted by electronic method. The circuits have high output impedance and use only grounded capacitors without any external resistor which is very appropriate to future development into an integrated circuit. The results of PSPICE simulation program are corresponding to the theoretical analysis.

Design of a CMOS Highly Linear Front-end IC with Auto Gain Controller for a Magnetic Field Transceiver

Year: 2011 Volume: 5 Issue: 7 797 - 801 Pages

Abstract: This paper describes a low-voltage and low-power channel selection analog front end with continuous-time low pass filters and highly linear programmable gain amplifier (PGA). The filters were realized as balanced Gm-C biquadratic filters to achieve a low current consumption. High linearity and a constant wide bandwidth are achieved by using a new transconductance (Gm) cell. The PGA has a voltage gain varying from 0 to 65dB, while maintaining a constant bandwidth. A filter tuning circuit that requires an accurate time base but no external components is presented. With a 1-Vrms differential input and output, the filter achieves -85dB THD and a 78dB signal-to-noise ratio. Both the filter and PGA were implemented in a 0.18um 1P6M n-well CMOS process. They consume 3.2mW from a 1.8V power supply and occupy an area of 0.19mm2.

A Study on the Condition Monitoring of Transmission Line by On-line Circuit Parameter Measurement

Year: 2013 Volume: 7 Issue: 8 967 - 971 Pages

Abstract: An on-line condition monitoring method for transmission line is proposed using electrical circuit theory and IT technology in this paper. It is reasonable that the circuit parameters such as resistance (R), inductance (L), conductance (g) and capacitance (C) of a transmission line expose the electrical conditions and physical state of the line. Those parameters can be calculated from the linear equation composed of voltages and currents measured by synchro-phasor measurement technique at both end of the line. A set of linear voltage drop equations containing four terminal constants (A, B ,C ,D ) are mathematical models of the transmission line circuits. At least two sets of those linear equations are established from different operation condition of the line, they may mathematically yield those circuit parameters of the line. The conditions of line connectivity including state of connecting parts or contacting parts of the switching device may be monitored by resistance variations during operation. The insulation conditions of the line can be monitored by conductance (g) and capacitance(C) measurements. Together with other condition monitoring devices such as partial discharge, sensors and visual sensing device etc.,they may give useful information to monitor out any incipient symptoms of faults. The prototype of hardware system has been developed and tested through laboratory level simulated transmission lines. The test has shown enough evident to put the proposed method to practical uses.

A Temperature-Insensitive Wide-Dynamic Range Positive/Negative Full-Wave Rectifier Based on Operational Trasconductance Amplifier using Commercially Available ICs

Year: 2011 Volume: 5 Issue: 10 1077 - 1080 Pages

Abstract: This paper presents positive and negative full-wave rectifier. The proposed structure is based on OTA using commercially available ICs (LT1228). The features of the proposed circuit are that: it can rectify and amplify voltage signal with controllable output magnitude via input bias current: the output voltage is free from temperature variation. The circuit description merely consists of 1 single ended and 3 fully differential OTAs. The performance of the proposed circuit are investigated though PSpice. They show that the proposed circuit can function as positive/negative full-wave rectifier, where the voltage input wide-dynamic range from -5V to 5V. Furthermore, the output voltage is slightly dependent on the temperature variations.

Third Order Current-mode Quadrature Sinusoidal Oscillator with High Output Impedances

Year: 2013 Volume: 7 Issue: 3 284 - 287 Pages

Abstract: This article presents a current-mode quadrature oscillator using differential different current conveyor (DDCC) and voltage differencing transconductance amplifier (VDTA) as active elements. The proposed circuit is realized fro m a non-inverting lossless integrator and an inverting second order low-pass filter. The oscillation condition and oscillation frequency can be electronically/orthogonally controlled via input bias currents. The circuit description is very simple, consisting of merely 1 DDCC, 1 VDTA, 1 grounded resistor and 3 grounded capacitors. Using only grounded elements, the proposed circuit is then suitable for IC architecture. The proposed oscillator has high output impedance which is easy to cascade or dive the external load without the buffer devices. The PSPICE simulation results are depicted, and the given results agree well with the theoretical anticipation. The power consumption is approximately 1.76mW at ±1.25V supply voltages.

A High-Frequency Low-Power Low-Pass-Filter-Based All-Current-Mirror Sinusoidal Quadrature Oscillator

Year: 2008 Volume: 2 Issue: 6 1042 - 1047 Pages

Abstract: A high-frequency low-power sinusoidal quadrature oscillator is presented through the use of two 2nd-order low-pass current-mirror (CM)-based filters, a 1st-order CM low-pass filter and a CM bilinear transfer function. The technique is relatively simple based on (i) inherent time constants of current mirrors, i.e. the internal capacitances and the transconductance of a diode-connected NMOS, (ii) a simple negative resistance RN formed by a resistor load RL of a current mirror. Neither external capacitances nor inductances are required. As a particular example, a 1.9-GHz, 0.45-mW, 2-V CMOS low-pass-filter-based all-current-mirror sinusoidal quadrature oscillator is demonstrated. The oscillation frequency (f0) is 1.9 GHz and is current-tunable over a range of 370 MHz or 21.6 %. The power consumption is at approximately 0.45 mW. The amplitude matching and the quadrature phase matching are better than 0.05 dB and 0.15°, respectively. Total harmonic distortions (THD) are less than 0.3 %. At 2 MHz offset from the 1.9 GHz, the carrier to noise ratio (CNR) is 90.01 dBc/Hz whilst the figure of merit called a normalized carrier-to-noise ratio (CNRnorm) is 153.03 dBc/Hz. The ratio of the oscillation frequency (f0) to the unity-gain frequency (fT) of a transistor is 0.25. Comparisons to other approaches are also included.

Closed form Delay Model for on-Chip VLSIRLCG Interconnects for Ramp Input for Different Damping Conditions

Year: 2011 Volume: 5 Issue: 3 225 - 231 Pages

Abstract: Fast delay estimation methods, as opposed to simulation techniques, are needed for incremental performance driven layout synthesis. On-chip inductive effects are becoming predominant in deep submicron interconnects due to increasing clock speed and circuit complexity. Inductance causes noise in signal waveforms, which can adversely affect the performance of the circuit and signal integrity. Several approaches have been put forward which consider the inductance for on-chip interconnect modelling. But for even much higher frequency, of the order of few GHz, the shunt dielectric lossy component has become comparable to that of other electrical parameters for high speed VLSI design. In order to cope up with this effect, on-chip interconnect has to be modelled as distributed RLCG line. Elmore delay based methods, although efficient, cannot accurately estimate the delay for RLCG interconnect line. In this paper, an accurate analytical delay model has been derived, based on first and second moments of RLCG interconnection lines. The proposed model considers both the effect of inductance and conductance matrices. We have performed the simulation in 0.18μm technology node and an error of as low as less as 5% has been achieved with the proposed model when compared to SPICE. The importance of the conductance matrices in interconnect modelling has also been discussed and it is shown that if G is neglected for interconnect line modelling, then it will result an delay error of as high as 6% when compared to SPICE.

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