Abstract: The Q-enhanced LC filters are the most used
architecture in the Bandpass (BP) Continuous-Time (CT)
Delta-Sigma (ΣΔ) modulators, due to their: high frequencies
operation, high linearity than the active filters and a high quality
factor obtained by Q-enhanced technique. This technique consists
of the use of a negative resistance that compensate the ohmic
losses in the on-chip inductor. However, this technique introduces a
zero in the filter transfer function which will affect the modulator
performances in term of Dynamic Range (DR), stability and in-band
noise (Signal-to-Noise Ratio (SNR)). In this paper, we study the
effect of this zero and we demonstrate that a calibration of the
excess loop delay (ELD) is required to ensure the best performances
of the modulator. System level simulations are done for a 2ndorder
BP CT (ΣΔ) modulator at a center frequency of 300MHz. Simulation
results indicate that the optimal ELD should be reduced by 13% to
achieve the maximum SNR and DR compared to the ideal LC-based
ΣΔ modulator.
Abstract: Germanium Telluride based quaternary thin film switching devices with composition Ge15In5Te56Ag24, have been deposited in sandwich geometry on glass substrate with aluminum as top and bottom electrodes. The bulk glassy form of the said composition is prepared by melt quenching technique. In this technique, appropriate quantity of elements with high purity are taken in a quartz ampoule and sealed under a vacuum of 10-5 mbar. Then, it is allowed to rotate in a horizontal rotary furnace for 36 hours to ensure homogeneity of the melt. After that, the ampoule is quenched into a mixture of ice - water and NaOH to get the bulk ingot of the sample. The sample is then coated on a glass substrate using flash evaporation technique at a vacuum level of 10-6 mbar. The XRD report reveals the amorphous nature of the thin film sample and Energy - Dispersive X-ray Analysis (EDAX) confirms that the film retains the same chemical composition as that of the base sample. Electrical switching behavior of the device is studied with the help of Keithley (2410c) source-measure unit interfaced with Lab VIEW 7 (National Instruments). Switching studies, mainly SET (changing the state of the material from amorphous to crystalline) operation is conducted on the thin film form of the sample. This device is found to manifest memory switching as the device remains 'ON' even after the removal of the electric field. Also it is found that amorphous Ge15In5Te56Ag24 thin film unveils clean memory type of electrical switching behavior which can be justified by the absence of fluctuation in the I-V characteristics. The I-V characteristic also reveals that the switching is faster in this sample as no data points could be seen in the negative resistance region during the transition to on state and this leads to the conclusion of fast phase change during SET process. Scanning Electron Microscopy (SEM) studies are performed on the chosen sample to study the structural changes at the time of switching. SEM studies on the switched Ge15In5Te56Ag24 sample has shown some morphological changes at the place of switching wherein it can be explained that a conducting crystalline channel is formed in the device when the device switches from high resistance to low resistance state. From these studies it can be concluded that the material may find its application in fast switching Non-Volatile Phase Change Memory (PCM) Devices.
Abstract: A high-frequency low-power sinusoidal quadrature
oscillator is presented through the use of two 2nd-order low-pass
current-mirror (CM)-based filters, a 1st-order CM low-pass filter and
a CM bilinear transfer function. The technique is relatively simple
based on (i) inherent time constants of current mirrors, i.e. the
internal capacitances and the transconductance of a diode-connected
NMOS, (ii) a simple negative resistance RN formed by a resistor load
RL of a current mirror. Neither external capacitances nor inductances
are required. As a particular example, a 1.9-GHz, 0.45-mW, 2-V
CMOS low-pass-filter-based all-current-mirror sinusoidal quadrature
oscillator is demonstrated. The oscillation frequency (f0) is 1.9 GHz
and is current-tunable over a range of 370 MHz or 21.6 %. The
power consumption is at approximately 0.45 mW. The amplitude
matching and the quadrature phase matching are better than 0.05 dB
and 0.15°, respectively. Total harmonic distortions (THD) are less
than 0.3 %. At 2 MHz offset from the 1.9 GHz, the carrier to noise
ratio (CNR) is 90.01 dBc/Hz whilst the figure of merit called a
normalized carrier-to-noise ratio (CNRnorm) is 153.03 dBc/Hz. The
ratio of the oscillation frequency (f0) to the unity-gain frequency (fT)
of a transistor is 0.25. Comparisons to other approaches are also
included.