Characterization of the LMOS with Different Channel Structure
In this paper, we propose a novel metal oxide
semiconductor field effect transistor with L-shaped channel structure
(LMOS), and several type of L-shaped structures are also designed,
studied and compared with the conventional MOSFET device for the
same average gate length (Lavg). The proposed device electrical
characteristics are analyzed and evaluated by three dimension (3-D)
ISE-TCAD simulator. It can be confirmed that the LMOS devices
have higher on-state drain current and both lower drain-induced
barrier lowering (DIBL) and subthreshold swing (S.S.) than its
conventional counterpart has. In addition, the transconductance and
voltage gain properties of the LMOS are also improved.
[1] X. Sun and T.-J. King Liu, "Scale-Length Assessment of the Trigate
Bulk MOSFET Design," IEEE Trans. Electron Devices, vol. 56, no 11,
pp. 2840-2842, Nov, 2009..
[2] R. A. Vega and T.-J. K. Liu, "Three_Dimensional FinFET Source_Drain
and Contact Design Optimization Study," IEEE Trans. Electron Devices,
vol. 56, no 7, pp. 1482-1492, July, 2009..
[3] B. Ramadout and G.-N. Lu et al., "Multigate MOSFET in a Bulk
Technology by Integrating Polysilicon-Filled Trenches," IEEE Electron
Device, vol. 30, no 12, pp. 1350-1352, Dec, 2009..
[4] P. Magnone and A. Mercha et al, "Matching Performance of FinFET
Devices With Fin Widths Down to 10 nm," IEEE Electron Device Lett,
vol. 30. no 12, pp. 1374-1376, Dec, 2009..
[5] J.-T. Lin and P.-H. Lin, IEEE "Characterization of a New L-shaped
MOSFET for Future Deca Nano Application," International Conference
on Microelectronics, Serbia, 2012.
[1] X. Sun and T.-J. King Liu, "Scale-Length Assessment of the Trigate
Bulk MOSFET Design," IEEE Trans. Electron Devices, vol. 56, no 11,
pp. 2840-2842, Nov, 2009..
[2] R. A. Vega and T.-J. K. Liu, "Three_Dimensional FinFET Source_Drain
and Contact Design Optimization Study," IEEE Trans. Electron Devices,
vol. 56, no 7, pp. 1482-1492, July, 2009..
[3] B. Ramadout and G.-N. Lu et al., "Multigate MOSFET in a Bulk
Technology by Integrating Polysilicon-Filled Trenches," IEEE Electron
Device, vol. 30, no 12, pp. 1350-1352, Dec, 2009..
[4] P. Magnone and A. Mercha et al, "Matching Performance of FinFET
Devices With Fin Widths Down to 10 nm," IEEE Electron Device Lett,
vol. 30. no 12, pp. 1374-1376, Dec, 2009..
[5] J.-T. Lin and P.-H. Lin, IEEE "Characterization of a New L-shaped
MOSFET for Future Deca Nano Application," International Conference
on Microelectronics, Serbia, 2012.
@article{"International Journal of Engineering, Mathematical and Physical Sciences:56917", author = "Hung-Pei Hsu and Jyi-Tsong Lin and Po-Hsieh Lin and Cheng-Hsien Chang and Ming-Tsung Shih and Chan-Hsiang Chang and Shih-Chuan Tseng and Min-Yan Lin and Shih-Wen Hsu", title = "Characterization of the LMOS with Different Channel Structure", abstract = "In this paper, we propose a novel metal oxide
semiconductor field effect transistor with L-shaped channel structure
(LMOS), and several type of L-shaped structures are also designed,
studied and compared with the conventional MOSFET device for the
same average gate length (Lavg). The proposed device electrical
characteristics are analyzed and evaluated by three dimension (3-D)
ISE-TCAD simulator. It can be confirmed that the LMOS devices
have higher on-state drain current and both lower drain-induced
barrier lowering (DIBL) and subthreshold swing (S.S.) than its
conventional counterpart has. In addition, the transconductance and
voltage gain properties of the LMOS are also improved.", keywords = "Average gate length (Lavg), drain-induced barrier lowering (DIBL), L-shaped channel MOSFET (LMOS), subthreshold swing (S.S.).", volume = "7", number = "6", pages = "989-4", }