Microstructure and Aging Behavior of Nonflammable AZ91D Mg Alloy

Phase equilibria of AZ91D Mg alloys for nonflammable use, containing Ca and Y, were carried out by using FactSage® and FTLite database, which revealed that solid solution treatment could be performed at temperatures from 400 to 450oC. Solid solution treatment of AZ91D Mg alloy without Ca and Y was successfully conducted at 420oC and supersaturated microstructure with all beta phase resolved into matrix was obtained. In the case of AZ91D Mg alloy with some Ca and Y; however, a little amount of intermetallic particles were observed after solid solution treatment. After solid solution treatment, each alloy was annealed at temperatures of 180 and 200oC for time intervals from 1 min to 48 hrs and hardness of each condition was measured by micro-Vickers method. Peak aging conditions were deduced as at the temperature of 200oC for 10 hrs.

Using Printing Method and Post Heat Treatment to Fabricate CIS Absorber Layer

In this study, the Mo-electrode thin films were deposited using two-stepped process and the high purity copper indium selenide-based powder (CuInSe2, CIS) was fabricated by using hydrothermal process by Nanowin Technology Co. Ltd. Because the CIS powder was aggregated into microscale particles, the CIS power was ground into nano-scale particles. 6 wt% CIS particles were mixed and dispersed into isopropyl alcohol (IPA). A new non-vacuum thin-film deposition process, spray coating method (SPM), was investigated to deposit the high-densified CIS absorber layers. 0.1 ml CIS solution was sprayed on the 20 mm×10 mm Mo/glass substrates and then the CuInSe2 thin films were annealed in a selenization furnace using N2 as atmosphere. The annealing temperature and time were set at 550oC and 5 min, and 0.0g~0.6g extra Se content was added in the furnace. The influences of extra Se content on the densification, crystallization, resistivity (ρ), hall mobility (μ), and carrier concentration of the CIS absorber layers were well investigated in this study.

Interface Analysis of Annealed Al/Cu Cladded Sheet

Effect of aging treatment on microstructural aspects of interfacial layers of the Cu/Al clad sheet produced by differential speed rolling (DSR) process were studied by electron back scattered diffraction (EBSD). Clad sheet of Al/Cu has been fabricated by using DSR, which caused severe shear deformation between Al and Cu plate to easily bond to each other. Rolling was carried out at 100oC with speed ratio of 2, in which the total thickness reduction was 45%. Interface layers of clad sheet were analyzed by EBSD after subsequent annealing at 400oC for 30 to 120min. With increasing annealing time, thickness of interface layer and fraction of high angle grain boundary were increased and average grain size was decreased.

Mechanical Properties Enhancement of 66/34Mg-Alloy for Medical Application

Sand cast samples of the as-received 66/34Mg-Al alloy were first homogenized at 4900C and then divided into three groups on which annealing, normalising and artificial ageing were respectively carried out. Thermal ageing of the samples involved treatment at 5000C, soaked for 4 hours and quenched in water at ambient temperature followed by tempering at 2000C for 2 hours. Test specimens were subjected to microstructure and mechanical analyses and the results compared. Precipitation of significant volume of stable Mg17Al12 crystals in the aged specimen’s matrix conferred superior mechanical characteristics compared with the annealed, normalized and as-cast specimens. The ultimate tensile strength was 93.4MPa with micro-hardness of 64.9HRC and impact energy (toughness) of 4.05J. In particular, its Young modulus was 10.4GPa which compared well with that of cortical (trabecule) bone’s modulus that varies from 12-17GPa.

Light Emission Enhancement of Silicon Nanocrystals by Gold Layer

A thin gold metal layer was deposited on the top of silicon oxide films containing embedded Si nanocrystals (Si-nc). The sample was annealed in a gas containing nitrogen, and subsequently characterized by photoluminescence. We obtained 3-fold enhancement of photon emission from the Si-nc embedded in silicon dioxide covered with a Gold layer as compared with an uncovered sample. We attribute this enhancement to the increase of the spontaneous emission rate caused by the coupling of the Si-nc emitters with the surface plasmons (SP). The evolution of PL emission with laser irradiated time was also collected from covered samples, and compared to that from uncovered samples. In an uncovered sample, the PL intensity decreases with time, approximately with two decay constants. Although the decrease of the initial PL intensity associated with the increase of sample temperature under CW pumping is still observed in samples covered with a gold layer, this film significantly contributes to reduce the permanent deterioration of the PL intensity. The resistance to degradation of light-emitting silicon nanocrystals can be increased by SP coupling to suppress the permanent deterioration. Controlling the permanent photodeterioration can allow to perform a reliable optical gain measurement.

Effect of Equal Channel Angular Pressing Process on Impact Property of Pure Copper

Ultrafine grained (UFG) and nanostructured (NS) materials have experienced a rapid development during the last decade and made profound impact on every field of materials science and engineering. The present work has been undertaken to develop ultrafine grained pure copper by severe plastic deformation method and to examine the impact property by different characterizing tools. For this aim, equal channel angular pressing die with the channel angle, outer corner angle and channel diameter of 90°, 17° and 20mm had been designed and manufactured. Commercial pure copper billets were ECAPed up to four passes by route BC at the ambient temperature. The results indicated that there is a great improvement at the hardness measurement, yield strength and ultimate tensile strength after ECAP process. It is found that the magnitudes of HV reach 136HV from 52HV after the final pass. Also, about 285% and 125% enhancement at the YS and UTS values have been obtained after the fourth pass as compared to the as-received conditions, respectively. On the other hand, the elongation to failure and impact energy have been reduced by imposing ECAP process and pass numbers. It is needed to say that about 56% reduction in the impact energy have been attained for the samples as contrasted to annealed specimens. 

Effects of Formic Acid on the Chemical State and Morphology of As-synthesized and Annealed ZnO Films

Zinc oxide thin films with various microstructures were grown on substrates by using HCOOH-sols. The reaction mechanism of the sol system was investigated by performing an XPS analysis of as-synthesized films, due to the products of hydrolysis and condensation in the sol system contributing to the chemical state of the as-synthesized films. The chemical structures of the assynthesized films related to the microstructures of the final annealed films were also studied. The results of the Zn 2p3/2, C 1s and O1s XPS patterns indicate that the hydrolysis reaction in the sol system is strongly influenced by the HCOOH agent. The results of XRD and FE-SEM demonstrated the microstructures of the annealed films are related to the content of hydrolyzed zinc hydrate (Zn-OH) species present, and that content of the Zn-OH species in the sol system increases the HCOOH adding, and these Zn-OH species existing in the sol phase are responsible for large ZnO crystallites in the final annealed films.

Effect of Including Thermal Process on Spot Welded and Weld-Bonded Joints

A three-dimensional finite element modeling for austenitic stainless steel AISI 304 annealed condition sheets of 1.0 mm thickness are developed using ABAQUS® software. This includes spot welded and weld bonded joints models. Both models undergo thermal heat caused by spot welding process and then are subjected to axial load up to the failure point. The properties of elastic and plastic regions, modulus of elasticity, fracture limit, nugget and heat affected zones are determined. Complete loaddisplacement curve for each joining model is obtained and compared with the experiment data and with the finite element models without including the effect of thermal process. In general, the results obtained for both spot welded and weld-bonded joints affected by thermal process showed an excellent agreement with the experimental data.

Patterned Growth of ZnO Nanowire Arrays on Zinc Foil by Thermal Oxidation

A simple approach is demonstrated for growing large scale, nearly vertically aligned ZnO nanowire arrays by thermal oxidation method. To reveal effect of temperature on growth and physical properties of the ZnO nanowires, gold coated zinc substrates were annealed at 300 °C and 400 °C for 4 hours duration in air. Xray diffraction patterns of annealed samples indicated a set of well defined diffraction peaks, indexed to the wurtzite hexagonal phase of ZnO. The scanning electron microscopy studies show formation of ZnO nanowires having length of several microns and average of diameter less than 500 nm. It is found that the areal density of wires is relatively higher, when the annealing is carried out at higher temperature i.e. at 400°C. From the field emission studies, the values of the turn-on and threshold field, required to draw emission current density of 10 μA/cm2 and 100 μA/cm2 are observed to be 1.2 V/μm and 1.7 V/μm for the samples annealed at 300 °C and 2.9 V/μm and 3.7 V/μm for that annealed at 400 °C, respectively. The field emission current stability, investigated over duration of more than 2 hours at the preset value of 1 μA, is found to be fairly good in both cases. The simplicity of the synthesis route coupled with the promising field emission properties offer unprecedented advantage for the use of ZnO field emitters for high current density applications.

Thermal Treatments and Characteristics Study On Unalloyed Structural (AISI 1140) Steel

The main emphasis of metallurgists has been to process the materials to obtain the balanced mechanical properties for the given application. One of the processing routes to alter the properties is heat treatment. Nearly 90% of the structural applications are related to the medium carbon an alloyed steels and hence are regarded as structural steels. The major requirement in the conventional steel is to improve workability, toughness, hardness and grain refinement. In this view, it is proposed to study the mechanical and tribological properties of unalloyed structural (AISI 1140) steel with different thermal (heat) treatments like annealing, normalizing, tempering and hardening and compared with as brought (cold worked) specimen. All heat treatments are carried out in atmospheric condition. Hardening treatment improves hardness of the material, a marginal decrease in hardness value with improved ductility is observed in tempering. Annealing and normalizing improve ductility of the specimen. Normalized specimen shows ultimate ductility. Hardened specimen shows highest wear resistance in the initial period of slide wear where as above 25KM of sliding distance, as brought steel dominates the hardened specimen. Both mild and severe wear regions are observed. Microstructural analysis shows the existence of pearlitic structure in normalized specimen, lath martensitic structure in hardened, pearlitic, ferritic structure in annealed specimen.

Inductance Characteristic of Annealed Titanium Dioxide on Silicon Substrate

The control of oxygen flow rate during growth of titanium dioxide by mass flow controller in DC plasma sputtering growth system is studied. The impedance of TiO2 films for inductance effect is influenced by annealing time and oxygen flow rate. As annealing time is increased, the inductance of TiO2 film is the more. The growth condition of optimum and maximum inductance for TiO2 film to serve as sensing device are oxygen flow rate of 15 sccm and large annealing time. The large inductance of TiO2 film will be adopted to fabricate the biosensor to obtain the high sensitivity of sensing in biology.

Characterization of the Energy Band Diagram of Fabricated SnO2/CdS/CdTe Thin Film Solar Cells

A SnO2/CdS/CdTe heterojunction was fabricated by thermal evaporation technique. The fabricated cells were annealed at 573K for periods of 60, 120 and 180 minutes. The structural properties of the solar cells have been studied by using X-ray diffraction. Capacitance- voltage measurements were studied for the as-prepared and annealed cells at a frequency of 102 Hz. The capacitance- voltage measurements indicated that these cells are abrupt. The capacitance decreases with increasing annealing time. The zero bias depletion region width and the carrier concentration increased with increasing annealing time. The carrier transport mechanism for the CdS/CdTe heterojunction in dark is tunneling recombination. The ideality factor is 1.56 and the reverse bias saturation current is 9.6×10-10A. The energy band lineup for the n- CdS/p-CdTe heterojunction was investigated using current - voltage and capacitance - voltage characteristics.

Blind Image Deconvolution by Neural Recursive Function Approximation

This work explores blind image deconvolution by recursive function approximation based on supervised learning of neural networks, under the assumption that a degraded image is linear convolution of an original source image through a linear shift-invariant (LSI) blurring matrix. Supervised learning of neural networks of radial basis functions (RBF) is employed to construct an embedded recursive function within a blurring image, try to extract non-deterministic component of an original source image, and use them to estimate hyper parameters of a linear image degradation model. Based on the estimated blurring matrix, reconstruction of an original source image from a blurred image is further resolved by an annealed Hopfield neural network. By numerical simulations, the proposed novel method is shown effective for faithful estimation of an unknown blurring matrix and restoration of an original source image.

Preparation of Nanostructure ZnO-SnO2 Thin Films for Optoelectronic Properties and Post Annealing Influence

ZnO-SnO2 i.e. Zinc-Tin-Oxide (ZTO) thin films were deposited on glass substrate with varying concentrations (ZnO:SnO2 - 100:0, 90:10, 70:30 and 50:50 wt.%) at room temperature by flash evaporation technique. These deposited ZTO film were annealed at 450 0C in vacuum. These films were characterized to study the effect of annealing on the structural, electrical, and optical properties. Atomic force microscopy (AFM) and Scanning electron microscopy (SEM) images manifest the surface morphology of these ZTO thin films. The apparent growth of surface features revealed the formation of nanostructure ZTO thin films. The small value of surface roughness (root mean square RRMS) ensures the usefulness in optical coatings. The sheet resistance was also found to be decreased for both types of films with increasing concentration of SnO2. The optical transmittance found to be decreased however blue shift has been observed after annealing.

Development of a Porous Silica Film by Sol-gel Process

In the present work homogeneous silica film on silicon was fabricated by colloidal silica sol. The silica sol precursor with uniformly granular particle was derived by the alkaline hydrolysis of tetraethoxyorthosilicate (TEOS) in presence of glycerol template. The film was prepared by dip coating process. The templated hetero-structured silica film was annealed at elevated temperatures to generate nano- and meso porosity in the film. The film was subsequently annealed at different temperatures to make it defect free and abrasion resistant. The sol and the film were characterized by the measurement of particle size distribution, scanning electron microscopy, XRD, FTIR spectroscopy, transmission electron microscopy, atomic force microscopy, measurement of the refractive index, thermal conductivity and abrasion resistance. The porosity of the films decreased whereas refractive index and dielectric constant of it `increased with the increase in the annealing temperature. The thermal conductivity of the films increased with the increase in the film thickness. The developed porous silica film holds strong potential for use in different areas.

Physical and Electrical Characterization of ZnO Thin Films Prepared by Sol-Gel Method

In this paper, Zinc Oxide (ZnO) thin films are deposited on glass substrate by sol-gel method. The ZnO thin films with well defined orientation were acquired by spin coating of zinc acetate dehydrate monoethanolamine (MEA), de-ionized water and isopropanol alcohol. These films were pre-heated at 275°C for 10 min and then annealed at 350°C, 450°C and 550°C for 80 min. The effect of annealing temperature and different thickness on structure and surface morphology of the thin films were verified by Atomic Force Microscopy (AFM). It was found that there was a significant effect of annealing temperature on the structural parameters of the films such as roughness exponent, fractal dimension and interface width. Thin films also were characterizied by X-ray Diffractometery (XRD) method. XRD analysis revealed that the annealed ZnO thin films consist of single phase ZnO with wurtzite structure and show the c-axis grain orientation. Increasing annealing temperature increased the crystallite size and the c-axis orientation of the film after 450°C. Also In this study, ZnO thin films in different thickness have been prepared by sol-gel method on the glass substrate at room temperature. The thicknesses of films are 100, 150 and 250 nm. Using fractal analysis, morphological characteristics of surface films thickness in amorphous state were investigated. The results show that with increasing thickness, surface roughness (RMS) and lateral correlation length (ξ) are decreased. Also, the roughness exponent (α) and growth exponent (β) were determined to be 0.74±0.02 and 0.11±0.02, respectively.

Effect of Applied Voltage Frequency on Electrical Treeing in 22 kV Cross-linked Polyethylene Insulated Cable

This paper presents the experimental results on effect of applied voltage stress frequency to the occurrence of electrical treeing in 22 kV cross linked polyethylene (XLPE) insulated cable.Hallow disk of XLPE insulating material with thickness 5 mm taken from unused high voltage cable was used as the specimen in this study. Stainless steel needle was inserted gradually into the specimen to give a tip to earth plane electrode separation of 2.50.2 mm at elevated temperature 105-110°C. The specimen was then annealed for 5 minute to minimize any mechanical stress build up around the needle-plane region before it was cooled down to room temperature. Each specimen were subjected to the same applied voltage stress level at 8 kV AC rms, with various frequency, 50, 100, 500, 1000 and 2000 Hz. Initiation time, propagation speed and pattern of electrical treeing were examined in order to study the effect of applied voltage stress frequency. By the experimental results, initial time of visible treeing decreases with increasing in applied voltage frequency. Also, obviously, propagation speed of electrical treeing increases with increasing in applied voltage frequency.Furthermore, two types of electrical treeing, bush-like and branch-like treeing were observed.The experimental results confirmed the effect of voltage stress frequency as well.

Fabrication and Characterization of CdS Nanoparticles Annealed by using Different Radiations

The systematic manipulations of shapes and sizes of inorganic compounds greatly benefit the various application fields including optics, magnetic, electronics, catalysis and medicine. However shape control has been much more difficult to achieve. Hence exploration of novel method for the preparation of differently shaped nanoparticles is challenging research area. II-VI group of semiconductor cadmium sulphide (CdS) nanostructure with different morphologies (such as, acicular like, mesoporous, spherical shapes) and of crystallite sizes vary from 11 to 16 nm were successfully synthesized by chemical aqueous precipitation of Cd2+ ions with homogeneously released S2- ions from decomposition of cadmium sulphate (CdSO4) and thioacetamide (CH3CSNH2) by annealing at different radiations (microwave, ultrasonic and sunlight) with matter and systematic research has been done for various factors affecting the controlled growth rate of CdS nanoparticles. The obtained nanomaterials have been characterized by X-ray Diffraction (XRD), Fourier Transform Infrared Spectroscopy (FTIR), Thermogravometric (DSC-TGA) analysis and Scanning Electron Microscopy (SEM). The result indicates that on increasing the reaction time particle size increases but on increasing the molar ratios grain size decreases.

Influence of Rolling Temperature on Microstructure and Mechanical Properties of Cryorolled Al-Mg-Si Alloy

An effect of rolling temperature on the mechanical properties and microstructural evolution of an Al-Mg-Si alloy was studied. The material was rolled up to a true strain of ~0.7 at three different temperatures viz; room temperature, liquid propanol and liquid nitrogen. The liquid nitrogen rolled sample exhibited superior properties with a yield and tensile strength of 332 MPa and 364 MPa, respectively, with a reasonably good ductility of ~9%. The liquid nitrogen rolled sample showed around 54 MPa increase in tensile strength without much reduction in the ductility as compared to the as received T6 condition alloy. The microstructural details revealed equiaxed grains in the annealed and solutionized sample and elongated grains in the rolled samples. In addition, the cryorolled samples exhibited fine grain structure compared to the room temperature rolled samples.

Effects of Annealing Treatment on Optical Properties of Anatase TiO2 Thin Films

In this investigation, anatase TiO2 thin films were grown by radio frequency magnetron sputtering on glass substrates at a high sputtering pressure and room temperature. The anatase films were then annealed at 300-600 °C in air for a period of 1 hour. To examine the structure and morphology of the films, X-ray diffraction (XRD) and atomic force microscopy (AFM) methods were used respectively. From X-ray diffraction patterns of the TiO2 films, it was found that the as-deposited film showed some differences compared with the annealed films and the intensities of the peaks of the crystalline phase increased with the increase of annealing temperature. From AFM images, the distinct variations in the morphology of the thin films were also observed. The optical constants were characterized using the transmission spectra of the films obtained by UV-VIS-IR spectrophotometer. Besides, optical thickness of the film deposited at room temperature was calculated and cross-checked by taking a cross-sectional image through SEM. The optical band gaps were evaluated through Tauc model. It was observed that TiO2 films produced at room temperatures exhibited high visible transmittance and transmittance decreased slightly with the increase of annealing temperatures. The films were found to be crystalline having anatase phase. The refractive index of the films was found from 2.31-2.35 in the visible range. The extinction coefficient was nearly zero in the visible range and was found to increase with annealing temperature. The allowed indirect optical band gap of the films was estimated to be in the range from 3.39 to 3.42 eV which showed a small variation. The allowed direct band gap was found to increase from 3.67 to 3.72 eV. The porosity was also found to decrease at a higher annealing temperature making the film compact and dense.