Abstract: Flow control valves comprise a silicon flexible membrane that deflects against a substrate, usually made of glass, containing pillars, an outlet hole, and anti-stiction features. However, there is a strong interest in using silicon instead of glass as substrate material, as it would simplify the process flow by allowing the use of well controlled anisotropic etching. Moreover, specific devices demanding a bending of the substrate would also benefit from the inherent outstanding mechanical strength of monocrystalline silicon. Unfortunately, direct Si-Si bonding is not easily achieved with highly structured wafers since residual stress may prevent the good adhesion between wafers. Using a thermoplastic polymer, such as parylene, as intermediate layer is not well adapted to this design as the wafer-to-wafer alignment is critical. An alternative anodic bonding method using an intermediate borosilicate layer has been successfully tested. This layer has been deposited onto the silicon substrate. The bonding recipe has been adapted to account for the presence of the SOI buried oxide and intermediate glass layer in order not to exceed the breakdown voltage. Flow control valves dedicated to infusion of viscous fluids at very high pressure have been made and characterized. The results are compared to previous data obtained using the standard anodic bonding method.
Abstract: The present research reports the investigation of fast etching of silicon for the fabrication of microelectromechanical systems (MEMS) structures using silicon wet bulk micromachining. Low concentration tetramethyl-ammonium hydroxide (TMAH) and hydroxylamine (NH2OH) are used as main etchant and additive, respectively. The concentration of NH2OH is varied to optimize the composition to achieve best etching characteristics such as high etch rate, significantly high undercutting at convex corner for the fast release of the microstructures from the substrate, and improved etched surface morphology. These etching characteristics are studied on Si{100} and Si{110} wafers as they are most widely used in the fabrication of MEMS structures as wells diode, transistors and integrated circuits.
Abstract: The miniaturization of circuits is advancing. During chip manufacturing, structures are filled for example by metal organic chemical vapor deposition (MOCVD). Since this process reaches its limits in case of very high aspect ratios, the use of alternatives such as the atomic layer deposition (ALD) is possible, requiring the extension of existing coating systems. However, it is an unsolved question to what extent MOCVD can achieve results similar as an ALD process. In this context, this work addresses the characterization of a metal organic vapor deposition of titanium nitride. Based on the current state of the art, the film properties coating thickness, sheet resistance, resistivity, stress and chemical composition are considered. The used setting parameters are temperature, plasma gas ratio, plasma power, plasma treatment time, deposition time, deposition pressure, number of cycles and TDMAT flow. The derived process instructions for unstructured wafers and inside a structure with high aspect ratio include lowering the process temperature and increasing the number of cycles, the deposition and the plasma treatment time as well as the plasma gas ratio of hydrogen to nitrogen (H2:N2). In contrast to the current process configuration, the deposited titanium nitride (TiN) layer is more uniform inside the entire test structure. Consequently, this paper provides approaches to employ the MOCVD for structures with increasing aspect ratios.
Abstract: Wetting efficiency of microstructures or nanostructures patterned on Si wafers is a real challenge in integrated circuits manufacturing. In fact, bad or non-uniform wetting during wet processes limits chemical reactions and can lead to non-complete etching or cleaning inside the patterns and device defectivity. This issue is more and more important with the transistors size shrinkage and concerns mainly high aspect ratio structures. Deep Trench Isolation (DTI) structures enabling pixels’ isolation in imaging devices are subject to this phenomenon. While low-frequency acoustic reflectometry principle is a well-known method for Non Destructive Test applications, we have recently shown that it is also well suited for nanostructures wetting characterization in a higher frequency range. In this paper, we present a high-frequency acoustic reflectometry characterization of DTI wetting through a confrontation of both experimental and modeling results. The acoustic method proposed is based on the evaluation of the reflection of a longitudinal acoustic wave generated by a 100 µm diameter ZnO piezoelectric transducer sputtered on the silicon wafer backside using MEMS technologies. The transducers have been fabricated to work at 5 GHz corresponding to a wavelength of 1.7 µm in silicon. The DTI studied structures, manufactured on the wafer frontside, are crossing trenches of 200 nm wide and 4 µm deep (aspect ratio of 20) etched into a Si wafer frontside. In that case, the acoustic signal reflection occurs at the bottom and at the top of the DTI enabling its characterization by monitoring the electrical reflection coefficient of the transducer. A Finite Difference Time Domain (FDTD) model has been developed to predict the behavior of the emitted wave. The model shows that the separation of the reflected echoes (top and bottom of the DTI) from different acoustic modes is possible at 5 Ghz. A good correspondence between experimental and theoretical signals is observed. The model enables the identification of the different acoustic modes. The evaluation of DTI wetting is then performed by focusing on the first reflected echo obtained through the reflection at Si bottom interface, where wetting efficiency is crucial. The reflection coefficient is measured with different water / ethanol mixtures (tunable surface tension) deposited on the wafer frontside. Two cases are studied: with and without PFTS hydrophobic treatment. In the untreated surface case, acoustic reflection coefficient values with water show that liquid imbibition is partial. In the treated surface case, the acoustic reflection is total with water (no liquid in DTI). The impalement of the liquid occurs for a specific surface tension but it is still partial for pure ethanol. DTI bottom shape and local pattern collapse of the trenches can explain these incomplete wetting phenomena. This high-frequency acoustic method sensitivity coupled with a FDTD propagative model thus enables the local determination of the wetting state of a liquid on real structures. Partial wetting states for non-hydrophobic surfaces or low surface tension liquids are then detectable with this method.
Abstract: The nanoindentation behaviour and phase
transformation of annealed single-crystal silicon wafers are examined.
The silicon specimens are annealed at temperatures of 250, 350 and
450ºC, respectively, for 15 minutes and are then indented to maximum
loads of 30, 50 and 70 mN. The phase changes induced in the indented
specimens are observed using transmission electron microscopy
(TEM) and micro-Raman scattering spectroscopy (RSS). For all
annealing temperatures, an elbow feature is observed in the unloading
curve following indentation to a maximum load of 30 mN. Under
higher loads of 50 mN and 70 mN, respectively, the elbow feature is
replaced by a pop-out event. The elbow feature reveals a complete
amorphous phase transformation within the indented zone, whereas
the pop-out event indicates the formation of Si XII and Si III phases.
The experimental results show that the formation of these crystalline
silicon phases increases with an increasing annealing temperature and
indentation load. The hardness and Young’s modulus both decrease as
the annealing temperature and indentation load are increased.
Abstract: Compositions of different molar ratios of
polymethylmethacrylate-co-methacrylic acid (PMMA-co-MAA)
were synthesized via free-radical polymerization. Polymer coated
surfaces have been produced on silicon wafers. Coated samples were
analyzed by atomic force microscopy (AFM). The results have shown
that the roughness of the surfaces have increased by increasing the
molar ratio of monomer methacrylic acid (MAA). This study reveals
that the gradual increase in surface roughness is due to the fact that
carboxylic functional groups have been generated by MAA segments.
Such surfaces can be desirable platforms for fabrication of the
biosensors for detection of the viruses and diseases.
Abstract: Alkylated silicon nanocrystals (C11-SiNCs) were
prepared successfully by galvanostatic etching of p-Si(100) wafers
followed by a thermal hydrosilation reaction of 1-undecene in
refluxing toluene in order to extract C11-SiNCs from porous silicon.
Erbium trichloride was added to alkylated SiNCs using a simple
mixing chemical route. To the best of our knowledge, this is the first
investigation on mixing SiNCs with erbium ions (III) by this
chemical method. The chemical characterization of C11-SiNCs and
their mixtures with Er3+(Er/C11-SiNCs) were carried out using X-ray
photoemission spectroscopy (XPS). The optical properties of C11-
SiNCs and their mixtures with Er3+ were investigated using Raman
spectroscopy and photoluminescence (PL). The erbium mixed
alkylated SiNCs shows an orange PL emission peak at around 595
nm that originates from radiative recombination of Si. Er/C11-SiNCs
mixture also exhibits a weak PL emission peak at 1536 nm that
originates from the intra-4f transition in erbium ions (Er3+). The PL
peak of Si in Er/C11-SiNCs mixture is increased in the intensity up to
three times as compared to pure C11-SiNCs. The collected data
suggest that this chemical mixing route leads instead to a transfer of
energy from erbium ions to alkylated SiNCs.
Abstract: Nowadays, with the increasing of the wafer's size and
the decreasing of critical size of integrated circuit manufacturing in
modern high-tech, microelectronics industry needs a maximum
attention to challenge the contamination control. The move to 300
[mm] is accompanied by the use of Front Opening Unified Pods for
wafer and his storage. In these pods an airborne cross contamination
may occur between wafers and the pods. A predictive approach using
modeling and computational methods is very powerful method to
understand and qualify the AMCs cross contamination processes.
This work investigates the required numerical tools which are
employed in order to study the AMCs cross-contamination transfer
phenomena between wafers and FOUPs. Numerical optimization and
finite element formulation in transient analysis were established.
Analytical solution of one dimensional problem was developed and
the calibration process of physical constants was performed. The least
square distance between the model (analytical 1D solution) and the
experimental data are minimized. The behavior of the AMCs
intransient analysis was determined. The model framework preserves
the classical forms of the diffusion and convection-diffusion
equations and yields to consistent form of the Fick's law. The
adsorption process and the surface roughness effect were also
traduced as a boundary condition using the switch condition Dirichlet
to Neumann and the interface condition. The methodology is applied,
first using the optimization methods with analytical solution to define
physical constants, and second using finite element method including
adsorption kinetic and the switch of Dirichlet to Neumann condition.
Abstract: A major challenge in biomaterials research is the
regulation of protein adsorption which is a key factor for controlling
the subsequent cell adhesion at implant surfaces. The aim of the
present study was to control the adsorption of fibronectin (FN) and
the attachment of MG-63 osteoblasts with an electronic
nanostructure. Shallow doping line lattices with a period of 260 nm
were produced for this purpose by implantation of phosphorous in
silicon wafers. Protein coverage was determined after incubating the
substrate with FN by means of an immunostaining procedure and the
measurement of the fluorescence intensity with a TECAN analyzer.
We observed an increased amount of adsorbed FN on the
nanostructure compared to control substrates. MG-63 osteoblasts
were cultivated for 24h on FN-incubated substrates and their
morphology was assessed by SEM. Preferred orientation and
elongation of the cells in direction of the doping lattice lines was
observed on FN-coated nanostructures.
Abstract: In a state-of-the-art industrial production line of
photovoltaic products the handling and automation processes are of
particular importance and implication. While processing a fully
functional crystalline solar cell an as-cut photovoltaic wafer is subject
to numerous repeated handling steps. With respect to stronger
requirements in productivity and decreasing rejections due to defects
the mechanical stress on the thin wafers has to be reduced to a
minimum as the fragility increases by decreasing wafer thicknesses.
In relation to the increasing wafer fragility, researches at the
Fraunhofer Institutes IPA and CSP showed a negative correlation
between multiple handling processes and the wafer integrity. Recent
work therefore focused on the analysis and optimization of the dry
wafer stack separation process with compressed air. The achievement
of a wafer sensitive process capability and a high production
throughput rate is the basic motivation in this research.