Photoluminescence Study of Erbium-Mixed Alkylated Silicon Nanocrystals
Alkylated silicon nanocrystals (C11-SiNCs) were
prepared successfully by galvanostatic etching of p-Si(100) wafers
followed by a thermal hydrosilation reaction of 1-undecene in
refluxing toluene in order to extract C11-SiNCs from porous silicon.
Erbium trichloride was added to alkylated SiNCs using a simple
mixing chemical route. To the best of our knowledge, this is the first
investigation on mixing SiNCs with erbium ions (III) by this
chemical method. The chemical characterization of C11-SiNCs and
their mixtures with Er3+(Er/C11-SiNCs) were carried out using X-ray
photoemission spectroscopy (XPS). The optical properties of C11-
SiNCs and their mixtures with Er3+ were investigated using Raman
spectroscopy and photoluminescence (PL). The erbium mixed
alkylated SiNCs shows an orange PL emission peak at around 595
nm that originates from radiative recombination of Si. Er/C11-SiNCs
mixture also exhibits a weak PL emission peak at 1536 nm that
originates from the intra-4f transition in erbium ions (Er3+). The PL
peak of Si in Er/C11-SiNCs mixture is increased in the intensity up to
three times as compared to pure C11-SiNCs. The collected data
suggest that this chemical mixing route leads instead to a transfer of
energy from erbium ions to alkylated SiNCs.
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light-emitting and memory devices, J. Phys. D-Appl. Phys., 46
(2013).
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Applied Physics, 82 (1997) 1-39.
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R65-R84.
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passivation on luminescence-center-mediated Er excitation in Si-rich
with and without Si nanocrystals, Physical Review B, 77 (2008) 205438.
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analysis of the spectral line shape of electronic transitions in rare earth
ions embedded in host crystals, New Journal of Physics, 15 (2013)
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Higher Education, 2006.
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Baker (Ed.) Electron Microscopy and Analysis Group Conference 2009,
Iop Publishing Ltd, Bristol, 2010.
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rich oxynitride films: effect of thermal treatments, Opt. Express, 22
(2014) 13022-13028.
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Evolution of the sensitized Er3+ emission by silicon nanoclusters and
luminescence centers in silicon-rich silica, Nanoscale Res. Lett., 9
(2014).
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Influence of the ion synthesis and ion doping regimes on the effect of
sensitization of erbium emission by silicon nanoclusters in silicon
dioxide films, Phys. Solid State, 55 (2013) 2361-2367.
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Mura, M.L. Mercuri, G. Bongiovanni, P. Deplano, Fully Efficient Direct
Yb-to-Er Energy Transfer at Molecular Level in a Near-Infrared
Emitting Heterometallic Trinuclear Quinolinolato Complex, J. Phys.
Chem. Lett., 4 (2013) 3062-3066.
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luminescence of erbium‐implanted III‐V semiconductors and silicon,
Applied Physics Letters, 43 (1983) 943-945.
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1.54‐μm electroluminescence of erbium‐doped silicon grown by
molecular beam epitaxy, Applied Physics Letters, 46 (1985) 381-383.
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Jambois, J.M. Fedeli, L. Pavesi, N. Prtljaga, P. Rivallin, A. Tengattini,
D. Navarro-Urrios, B. Garrido, Er-doped light emitting slot waveguides
monolithically integrated in a silicon photonic chip, Nanotechnology, 24
(2013).
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Kozanecki, M.J. Soares, M. Peres, Photoluminescence of nc-Si:Er thin
films obtained by physical and chemical vapour deposition techniques:
The effects of microstructure and chemical composition, Thin Solid
Films, 517 (2009) 5808-5812.
[16] M.F. Cerqueira, T. Monteiro, M.J. Soares, A. Kozanecki, P. Alpuim, E.
Alves, Erbium doped nanocrystalline silicon thin films produced by RF
sputtering - annealing effect on the Er emission, physica status solidi (c),
7 (2010) 683-687.
[17] B. Garrido, C. García, P. Pellegrino, D. Navarro-Urrios, N. Daldosso, L.
Pavesi, F. Gourbilleau, R. Rizk, Distance dependent interaction as the
limiting factor for Si nanocluster to Er energy transfer in silica, Applied
Physics Letters, 89 (2006) 163103.
[18] S.A. Denisov, S.A. Matveev, V.Y. Chalkov, V.G. Shengurov, Y.N.
Drozdov, M.V. Stepikhova, D.V. Shengurov, Z.F. Krasilnik, Si1-x Ge
(x) /Si heterostructures grown by molecular-beam epitaxy on silicon-onsapphire
substrates, Semiconductors, 48 (2014) 402-405.
[19] H. Omar, N.K. Sabri, A. Radzi, M. Rusop, S. Abdullah, N.I. Ikhsan,
Optical Characterization of Porous Silicon (PS) doped Erbium (Er) using
Photoluminescence Spectroscopy, in: M.H. Mamat, Z. Khusaimi, S.A.
Bakar, A.M. Nor, T. Soga, M.R. Mahmood (Eds.) Nanoscience,
Nanotechnology and Nanoengineering, Trans Tech Publications Ltd,
Stafa-Zurich, 2014, pp. 617-621.
[20] R.J. Kashtiban, U. Bangert, I.F. Crowe, M. Halsall, A.J. Harvey, M.
Gass, Study of erbium doped silicon nanocrystals in silica, Journal of
Physics: Conference Series, 241 (2010) 012097.
[21] M. Fujii, M. Yoshida, S. Hayashi, K. Yamamoto, Photoluminescence
from SiO2 films containing Si nanocrystals and Er: Effects of
nanocrystalline size on the photoluminescence efficiency of Er3+,
Journal of Applied Physics, 84 (1998) 4525-4531.
[22] M. Fujii, M. Yoshida, Y. Kanzawa, S. Hayashi, K. Yamamoto, 1.54 mu
m photoluminescence of Er3+ doped into SiO2 films containing Si
nanocrystals: Evidence for energy transfer from Si nanocrystals to Er3+,
Applied Physics Letters, 71 (1997) 1198-1200.
[23] J. St. John, J.L. Coffer, Y. Chen, R.F. Pinizzotto, Synthesis and
Characterization of Discrete Luminescent Erbium Doped Silicon
Nanocrystals, Journal of the American Chemical Society, 121 (1999)
1888-1892.
[24] J. Ji, R.A. Senter, L.R. Tessler, D. Back, C.H. Winter, J.L. Coffer, Rare
earth doped silicon nanocrystals derived from an erbium amidinate
precursor, Nanotechnology, 15 (2004) 643.
[25] P.G. Kik, M.L. Brongersma, A. Polman, Strong exciton-erbium coupling
in Si nanocrystal-doped SiO2, Applied Physics Letters, 76 (2000) 2325-
2327.
[26] L.H. Lie, M. Duerdin, E.M. Tuite, A. Houlton, B.R. Horrocks,
Preparation and characterisation of luminescent alkylated-silicon
quantum dots, Journal of Electroanalytical Chemistry, 538–539 (2002)
183-190.
[27] Y. Chao, L. Šiller, S. Krishnamurthy, P.R. Coxon, U. Bangert, M. Gass,
L. Kjeldgaard, S.N. Patole, L.H. Lie, N. O'Farrell, T.A. Alsop, A.
Houlton, B.R. Horrocks, Evaporation and deposition of alkyl-capped
silicon nanocrystals in ultrahigh vacuum, Nat Nano, 2 (2007) 486-489.
[28] F.M. Dickinson, T.A. Alsop, N. Al-Sharif, C.E.M. Berger, H.K. Datta,
L. Šiller, Y. Chao, E.M. Tuite, A. Houlton, B.R. Horrocks, Dispersions
of alkyl-capped silicon nanocrystals in aqueous media:
photoluminescence and ageing, Analyst, 133 (2008) 1573-1580.
[29] Y. Chao, S. Krishnamurthy, M. Montalti, L.H. Lie, A. Houlton, B.R.
Horrocks, L. Kjeldgaard, V.R. Dhanak, M.R.C. Hunt, L. Šiller,
Reactions and luminescence in passivated Si nanocrystallites induced by vacuum ultraviolet and soft-x-ray photons, Journal of Applied Physics,
98 (2005) 044316.
[30] L. Šiller, S. Krishnamurthy, L. Kjeldgaard, B.R. Horrocks, Y. Chao, A.
Houlton, A.K. Chakraborty, M.R.C. Hunt, Core and valence exciton
formation in x-ray absorption, x-ray emission and x-ray excited optical
luminescence from passivated Si nanocrystals at the Si L 2,3 edge,
Journal of Physics: Condensed Matter, 21 (2009) 095005.
[31] Y. Hijikata, H. Yaguchi, M. Yoshikawa, S. Yoshida, Composition
analysis of SiO2/SiC interfaces by electron spectroscopic measurements
using slope-shaped oxide films, Applied Surface Science, 184 (2001)
161-166.
[32] T.J. Pinnavaia, A. Sayari, Nanoporous Materials II, Elsevier Science,
2000.
[33] L.J. Bellamy, The Infra-red Spectra of Complex Molecules, Chapman
and Hall, 1975.
[34] B.C. Smith, Fundamentals of Fourier Transform Infrared Spectroscopy,
Taylor & Francis, 1995.
[35] M. Losurdo, M.M. Giangregorio, G. Bruno, D. Yang, E.A. Irene, A.A.
Suvorova, M. Saunders, Er2O3 as a high-K dielectric candidate, Applied
Physics Letters, 91 (2007) 091914.
[36] M. Losurdo, M.M. Giangregorio, P. Capezzuto, G. Bruno, G.
Malandrino, I.L. Fragalà, L. Armelao, D. Barreca, E. Tondello,
Structural and Optical Properties of Nanocrystalline Er2O3 Thin Films
Deposited by a Versatile Low-Pressure MOCVD Approach, J.
Electrochem. Soc., 155 (2008) G44-G50.
[37] H.H. Shen, S.M. Peng, X.G. Long, X.S. Zhou, L. Yang, X.T. Zu, The
effect of substrate temperature on the oxidation behavior of erbium thick
films, Vacuum, 86 (2012) 1097-1101.
[38] G.A. Bhaduri, R. Little, R.B. Khomane, S.U. Lokhande, B.D. Kulkarni,
B.G. Mendis, L. Šiller, Green synthesis of silver nanoparticles using
sunlight, Journal of Photochemistry and Photobiology A: Chemistry,
258 (2013) 1-9.
[39] S.K. Mishra, A.S. Bhattacharyya, P.K.P. Rupa, L.C. Pathak, XPS
Studies on Nanocomposite Si-C-N Coatings Deposited by Magnetron
Sputtering, Nanosci. Nanotechnol. Lett., 4 (2012) 352-357.
[40] Y.S. Gu, Y.P. Zhang, X.R. Chang, Z.Z. Tian, N.X. Chen, D.X. Shi, X.F.
Zhang, L. Yuan, Synthesis and characterization of C3N4 hard films, Sci.
China Ser. A-Math. Phys. Astron., 43 (2000) 185-198.
[41] T. Mohanty, N.C. Mishra, A. Pradhan, D. Kanjilal, Luminescence from
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@article{"International Journal of Chemical, Materials and Biomolecular Sciences:68859", author = "Khamael M. Abualnaja and Lidija Šiller and Benjamin R. Horrocks", title = "Photoluminescence Study of Erbium-Mixed Alkylated Silicon Nanocrystals", abstract = "Alkylated silicon nanocrystals (C11-SiNCs) were
prepared successfully by galvanostatic etching of p-Si(100) wafers
followed by a thermal hydrosilation reaction of 1-undecene in
refluxing toluene in order to extract C11-SiNCs from porous silicon.
Erbium trichloride was added to alkylated SiNCs using a simple
mixing chemical route. To the best of our knowledge, this is the first
investigation on mixing SiNCs with erbium ions (III) by this
chemical method. The chemical characterization of C11-SiNCs and
their mixtures with Er3+(Er/C11-SiNCs) were carried out using X-ray
photoemission spectroscopy (XPS). The optical properties of C11-
SiNCs and their mixtures with Er3+ were investigated using Raman
spectroscopy and photoluminescence (PL). The erbium mixed
alkylated SiNCs shows an orange PL emission peak at around 595
nm that originates from radiative recombination of Si. Er/C11-SiNCs
mixture also exhibits a weak PL emission peak at 1536 nm that
originates from the intra-4f transition in erbium ions (Er3+). The PL
peak of Si in Er/C11-SiNCs mixture is increased in the intensity up to
three times as compared to pure C11-SiNCs. The collected data
suggest that this chemical mixing route leads instead to a transfer of
energy from erbium ions to alkylated SiNCs.
", keywords = "Photoluminescence, Silicon Nanocrystals, Erbium,
Raman Spectroscopy.", volume = "9", number = "2", pages = "238-11", }
