Abstract: Direct conversion of methane to methanol by partial oxidation in a thermal reactor has a poor yield of about 2% which is less than the expected economical yield of about 10%. Conventional thermal catalytic reactors have been proposed to be superseded by plasma reactors as a promising approach, due to strength of the electrical energy which can break C-H bonds of methane. Among the plasma techniques, non-thermal dielectric barrier discharge (DBD) plasma chemical process is one of the most future promising technologies in synthesizing methanol. The purpose of this paper is presenting a brief review of CH4 oxidation with O2 in DBD plasma reactors based on the recent investigations. For this reason, the effect of various parameters of reactor configuration, feed ratio, applied voltage, residence time (gas flow rate), type of applied catalyst, pressure and reactor wall temperature on methane conversion and methanol selectivity are discussed.
Abstract: Semiconductor materials with coatings have a wide range of applications in MEMS and NEMS. This work uses transfermatrix method for calculating the radiative properties. Dopped silicon is used and the coherent formulation is applied. The Drude model for the optical constants of doped silicon is employed. Results showed that for the visible wavelengths, more emittance occurs in greater concentrations and the reflectance decreases as the concentration increases. In these wavelengths, transmittance is negligible. Donars and acceptors act similar in visible wavelengths. The effect of wave interference can be understood by plotting the spectral properties such as reflectance or transmittance of a thin dielectric film versus the film thickness and analyzing the oscillations of properties due to constructive and destructive interferences. But this effect has not been shown at visible wavelengths. At room temperature, the scattering process is dominated by lattice scattering for lightly doped silicon, and the impurity scattering becomes important for heavily doped silicon when the dopant concentration exceeds1018cm-3 .
Abstract: Fast delay estimation methods, as opposed to
simulation techniques, are needed for incremental performance
driven layout synthesis. On-chip inductive effects are becoming
predominant in deep submicron interconnects due to increasing clock
speed and circuit complexity. Inductance causes noise in signal
waveforms, which can adversely affect the performance of the circuit
and signal integrity. Several approaches have been put forward which
consider the inductance for on-chip interconnect modelling. But for
even much higher frequency, of the order of few GHz, the shunt
dielectric lossy component has become comparable to that of other
electrical parameters for high speed VLSI design. In order to cope up
with this effect, on-chip interconnect has to be modelled as
distributed RLCG line. Elmore delay based methods, although
efficient, cannot accurately estimate the delay for RLCG interconnect
line. In this paper, an accurate analytical delay model has been
derived, based on first and second moments of RLCG
interconnection lines. The proposed model considers both the effect
of inductance and conductance matrices. We have performed the
simulation in 0.18μm technology node and an error of as low as less
as 5% has been achieved with the proposed model when compared to
SPICE. The importance of the conductance matrices in interconnect
modelling has also been discussed and it is shown that if G is
neglected for interconnect line modelling, then it will result an delay
error of as high as 6% when compared to SPICE.