Abstract: This paper sets out a behavioral macro-model of a
Merged PiN and Schottky (MPS) diode based on silicon carbide
(SiC). This model holds good for both static and dynamic electrothermal
simulations for industrial applications. Its parameters have
been worked out from datasheets curves by drawing on the
optimization method: Simulated Annealing (SA) for the SiC MPS
diodes made available in the industry. The model also adopts the
Analog Behavioral Model (ABM) of PSPICE in which it has been
implemented. The thermal behavior of the devices was also taken
into consideration by making use of Foster’ canonical network as
figured out from electro-thermal measurement provided by the
manufacturer of the device.
Abstract: There is need to explore emerging technologies based on carbon nanotube electronics as the MOS technology is approaching its limits. As MOS devices scale to the nano ranges, increased short channel effects and process variations considerably effect device and circuit designs. As a promising new transistor, the Carbon Nanotube Field Effect Transistor(CNTFET) avoids most of the fundamental limitations of the Traditional MOSFET devices. In this paper we present the analysis and comparision of a Carbon Nanotube FET(CNTFET) based 10(A current mirror with MOSFET for 32nm technology node. The comparision shows the superiority of the former in terms of 97% increase in output resistance,24% decrease in power dissipation and 40% decrease in minimum voltage required for constant saturation current. Furthermore the effect on performance of current mirror due to change in chirality vector of CNT has also been investigated. The circuit simulations are carried out using HSPICE model.