Abstract: This paper sets out a behavioral macro-model of a
Merged PiN and Schottky (MPS) diode based on silicon carbide
(SiC). This model holds good for both static and dynamic electrothermal
simulations for industrial applications. Its parameters have
been worked out from datasheets curves by drawing on the
optimization method: Simulated Annealing (SA) for the SiC MPS
diodes made available in the industry. The model also adopts the
Analog Behavioral Model (ABM) of PSPICE in which it has been
implemented. The thermal behavior of the devices was also taken
into consideration by making use of Foster’ canonical network as
figured out from electro-thermal measurement provided by the
manufacturer of the device.