SiC Merged PiN and Schottky (MPS) Power Diodes Electrothermal Modeling in SPICE
This paper sets out a behavioral macro-model of a
Merged PiN and Schottky (MPS) diode based on silicon carbide
(SiC). This model holds good for both static and dynamic electrothermal
simulations for industrial applications. Its parameters have
been worked out from datasheets curves by drawing on the
optimization method: Simulated Annealing (SA) for the SiC MPS
diodes made available in the industry. The model also adopts the
Analog Behavioral Model (ABM) of PSPICE in which it has been
implemented. The thermal behavior of the devices was also taken
into consideration by making use of Foster’ canonical network as
figured out from electro-thermal measurement provided by the
manufacturer of the device.
[1] B.J. Baliga, “Analysis of a High-Voltage Merged p-i-n/Schottky (MPS)
Rectifier”. IEEE Electron Device Letters, Vol. EDL-8, No. 9. September
1987.
[2] H.J. Hua, L.H. Liang, Z.Y. Ming, Z.Y. Men, T.X. Yan, C.F. Ping, and
S.Q. Wen “Simulation study of a mixed terminal structure for 4H-SiC
merged PiN/Schottky diode” Chin. Phys. B Vol. 20, No. 11 (2011)
118401.
[3] S. M. Sze, and Kwok K. Ng “Physics of Semiconductor Devices” 3rd
Edition A John Wiley & SONS 2007
[4] B. J Baliga “Fundamentals of power semiconductor devices” Springer
Science 2008.
[5] J.S. Yuan and J.J. Liou “Semiconductor Device Physics and Simulation”
Plenum Press 1998.
[6] T.R. McNutt, A.R. Hefner Jr, H.A. Mantooth, J.L. Duliere, D.W.
Berning, and R. Singh “Physics-based modeling and characterization
for silicon carbide power diodes” Science Direct, Solid-State
Electronics Volume 50, Issue 3, March 2006, Pages 388–398.
[7] J. Dąbrowski, and J. Zarębski “Silicon Power Schottky Diodes Model
Implemented in SPICE” TCSET 2008, February 19-23, 2008, Lviv-
Slavsko, Ukraine.
[8] F. N. Masana “SiC Schottky Diode Electrothermal Macromodel”
MIXDES 2010, 17th International Conference "Mixed Design of
Integrated Circuits and Systems", June 24-26, 2010, Wroclaw, Poland.
[9] K.J. Tseng, C.F. Foo and P.R. Palmer “Implementing power diode
models in Spice and Saber” 0-7803-18S9-S/94/$4.00 1994 IEEE.
[10] G. L. Skibinski and W.A. Sethares “Thermal Parameter Estimation
Using Recursive Identification” IEEE Transactions on power
electronics. Vol 6. No 2, April 1991.
[11] K. V. V. Murthy and R. E. Bedford “Transformation Between Foster
and Cauer Equivalent Networks” IEEE Transactions on Circuits and
Systems, Vol. CAS -25, NO. 4, APRIL 1978.
[12] Star-Hspice Manual, Release 1998.2, July 1998.
[13] Cadence OrCad, Help Product version 16.6 October 2012.
[14] G. Massobrio, P. Antognetti, “Semiconductor Device Modeling with
SPICE”, 2nd edition, McGraw Hill, 1 December 1998.
[15] J. Luo, K.J. Chung, H. Huang, and J.B. Bernstein, “Temperature
dependence of Ron-sp in silicon carbide and GaAs Schottky diode”
IEEE 02CH37320. 40th Annual international Reliability Physics
Symposium, Dallas. Texas, 2002.
[16] H. A Mantooth, Senior Member, IEEE, and Jeffrey L. Duliere “A
Unified Diode Model for Circuit Simulation” IEEE Transactions on
Power Electronics, vol. 12, no. 5, September 1997.
[17] A. Maxim, D. Andreu, and J. Boucher, « A Unified High Accuracy
SPICE Library For The Power Semiconductor Devices Built With The
Analog Behavioral Macromodeling Technique” ISPSO 2000. May 22-
25. Toulouse, France.
[18] Y.C Liang, V.J Gosbell “Diode Forward and Reverse Recovery Model
for Power Electronic SPICE Simulations” IEEE Transactions on power
electronics. Vol 5. No 3. July 1990.
[19] CSD04060–Silicon Carbide Schottky Diode, Datasheet, Rev. Q, Cree.
[20] N. Jankovic, T. Ueta, K. Hamada, T. Nishijima, P. Igic “Unified
Approach in Electro-Thermal Modelling of IGBTs and Power PiN
Diodes” Proceedings of the 19th International Symposium on Power
Semiconductor Devices & ICs May 27-30, 2007 Jeju, Korea.
[21] A. Guerra, F. Vallone, “Electro-Thermal SPICE Schottky Diode Model
Suitable Both at Room Temperature and at High Temperature,”
International Rectifier, Dec. 1999.
[22] M. Marz, P. Nance, “Thermal Modeling of Power Electronic Systems,”
Fraunhofer Institute, Apr. 2000.
[23] F.N. Masana “A straightforward analytical method for extraction of
semiconductor device transient thermal parameters” Microelectronics
Reliability 47 (2007) 2122–2128 Science Direct Elsevier.
[24] R. Chibante “Simulated Annealing Theory with Applications” Published
by Sciyo First published September 2010.
[25] C3D04060E –Silicon Carbide Schottky Diode, Datasheet, Rev. E, Cree.
[26] CSD10030 –Silicon Carbide Schottky Diode, Datasheet, Rev. B, Cree.
[27] SDP04S60 –Silicon Carbide Schottky Diode, Datasheet, Rev. 2.5,
Infineon.
[28] SDP10S30 –Silicon Carbide Schottky Diode, Datasheet, Rev. 1.5,
Infineon.
[1] B.J. Baliga, “Analysis of a High-Voltage Merged p-i-n/Schottky (MPS)
Rectifier”. IEEE Electron Device Letters, Vol. EDL-8, No. 9. September
1987.
[2] H.J. Hua, L.H. Liang, Z.Y. Ming, Z.Y. Men, T.X. Yan, C.F. Ping, and
S.Q. Wen “Simulation study of a mixed terminal structure for 4H-SiC
merged PiN/Schottky diode” Chin. Phys. B Vol. 20, No. 11 (2011)
118401.
[3] S. M. Sze, and Kwok K. Ng “Physics of Semiconductor Devices” 3rd
Edition A John Wiley & SONS 2007
[4] B. J Baliga “Fundamentals of power semiconductor devices” Springer
Science 2008.
[5] J.S. Yuan and J.J. Liou “Semiconductor Device Physics and Simulation”
Plenum Press 1998.
[6] T.R. McNutt, A.R. Hefner Jr, H.A. Mantooth, J.L. Duliere, D.W.
Berning, and R. Singh “Physics-based modeling and characterization
for silicon carbide power diodes” Science Direct, Solid-State
Electronics Volume 50, Issue 3, March 2006, Pages 388–398.
[7] J. Dąbrowski, and J. Zarębski “Silicon Power Schottky Diodes Model
Implemented in SPICE” TCSET 2008, February 19-23, 2008, Lviv-
Slavsko, Ukraine.
[8] F. N. Masana “SiC Schottky Diode Electrothermal Macromodel”
MIXDES 2010, 17th International Conference "Mixed Design of
Integrated Circuits and Systems", June 24-26, 2010, Wroclaw, Poland.
[9] K.J. Tseng, C.F. Foo and P.R. Palmer “Implementing power diode
models in Spice and Saber” 0-7803-18S9-S/94/$4.00 1994 IEEE.
[10] G. L. Skibinski and W.A. Sethares “Thermal Parameter Estimation
Using Recursive Identification” IEEE Transactions on power
electronics. Vol 6. No 2, April 1991.
[11] K. V. V. Murthy and R. E. Bedford “Transformation Between Foster
and Cauer Equivalent Networks” IEEE Transactions on Circuits and
Systems, Vol. CAS -25, NO. 4, APRIL 1978.
[12] Star-Hspice Manual, Release 1998.2, July 1998.
[13] Cadence OrCad, Help Product version 16.6 October 2012.
[14] G. Massobrio, P. Antognetti, “Semiconductor Device Modeling with
SPICE”, 2nd edition, McGraw Hill, 1 December 1998.
[15] J. Luo, K.J. Chung, H. Huang, and J.B. Bernstein, “Temperature
dependence of Ron-sp in silicon carbide and GaAs Schottky diode”
IEEE 02CH37320. 40th Annual international Reliability Physics
Symposium, Dallas. Texas, 2002.
[16] H. A Mantooth, Senior Member, IEEE, and Jeffrey L. Duliere “A
Unified Diode Model for Circuit Simulation” IEEE Transactions on
Power Electronics, vol. 12, no. 5, September 1997.
[17] A. Maxim, D. Andreu, and J. Boucher, « A Unified High Accuracy
SPICE Library For The Power Semiconductor Devices Built With The
Analog Behavioral Macromodeling Technique” ISPSO 2000. May 22-
25. Toulouse, France.
[18] Y.C Liang, V.J Gosbell “Diode Forward and Reverse Recovery Model
for Power Electronic SPICE Simulations” IEEE Transactions on power
electronics. Vol 5. No 3. July 1990.
[19] CSD04060–Silicon Carbide Schottky Diode, Datasheet, Rev. Q, Cree.
[20] N. Jankovic, T. Ueta, K. Hamada, T. Nishijima, P. Igic “Unified
Approach in Electro-Thermal Modelling of IGBTs and Power PiN
Diodes” Proceedings of the 19th International Symposium on Power
Semiconductor Devices & ICs May 27-30, 2007 Jeju, Korea.
[21] A. Guerra, F. Vallone, “Electro-Thermal SPICE Schottky Diode Model
Suitable Both at Room Temperature and at High Temperature,”
International Rectifier, Dec. 1999.
[22] M. Marz, P. Nance, “Thermal Modeling of Power Electronic Systems,”
Fraunhofer Institute, Apr. 2000.
[23] F.N. Masana “A straightforward analytical method for extraction of
semiconductor device transient thermal parameters” Microelectronics
Reliability 47 (2007) 2122–2128 Science Direct Elsevier.
[24] R. Chibante “Simulated Annealing Theory with Applications” Published
by Sciyo First published September 2010.
[25] C3D04060E –Silicon Carbide Schottky Diode, Datasheet, Rev. E, Cree.
[26] CSD10030 –Silicon Carbide Schottky Diode, Datasheet, Rev. B, Cree.
[27] SDP04S60 –Silicon Carbide Schottky Diode, Datasheet, Rev. 2.5,
Infineon.
[28] SDP10S30 –Silicon Carbide Schottky Diode, Datasheet, Rev. 1.5,
Infineon.
@article{"International Journal of Electrical, Electronic and Communication Sciences:71713", author = "A. Lakrim and D. Tahri", title = "SiC Merged PiN and Schottky (MPS) Power Diodes Electrothermal Modeling in SPICE", abstract = "This paper sets out a behavioral macro-model of a
Merged PiN and Schottky (MPS) diode based on silicon carbide
(SiC). This model holds good for both static and dynamic electrothermal
simulations for industrial applications. Its parameters have
been worked out from datasheets curves by drawing on the
optimization method: Simulated Annealing (SA) for the SiC MPS
diodes made available in the industry. The model also adopts the
Analog Behavioral Model (ABM) of PSPICE in which it has been
implemented. The thermal behavior of the devices was also taken
into consideration by making use of Foster’ canonical network as
figured out from electro-thermal measurement provided by the
manufacturer of the device.", keywords = "SiC MPS Diode, electro-thermal, SPICE Model.", volume = "8", number = "8", pages = "1374-5", }
