Scholarly

Characterization of the LMOS with Different Channel Structure

Year: 2013 Volume: 7 Issue: 6 989 - 992 Pages

Abstract: In this paper, we propose a novel metal oxide semiconductor field effect transistor with L-shaped channel structure (LMOS), and several type of L-shaped structures are also designed, studied and compared with the conventional MOSFET device for the same average gate length (Lavg). The proposed device electrical characteristics are analyzed and evaluated by three dimension (3-D) ISE-TCAD simulator. It can be confirmed that the LMOS devices have higher on-state drain current and both lower drain-induced barrier lowering (DIBL) and subthreshold swing (S.S.) than its conventional counterpart has. In addition, the transconductance and voltage gain properties of the LMOS are also improved.

Design of Novel SCR-based ESD Protection Device for I/O Clamp in BCD Process

Year: 2011 Volume: 5 Issue: 2 187 - 190 Pages

Abstract: In this paper, a novel LVTSCR-based device for electrostatic discharge (ESD) protection of integrated circuits (ICs) is designed, fabricated and characterized. The proposed device is similar to the conventional LVTSCR but it has an embedded PMOSFET in the anode n-well to enhance the turn on speed, the clamping capability and the robustness. This is possible because the embedded PMOSFET provides the sub-path of ESD discharge current. The TLP, HBM and MM testing are carried out to verify the ESD performance of the proposed devices, which are fabricated in 0.35um (Bipolar-CMOS-DMOS) BCDMOS process. The device has the robustness of 70mA/um that is higher about 60mA/um than the LVTSCR, approximately.

Optimization of HALO Structure Effects in 45nm p-type MOSFETs Device Using Taguchi Method

Year: 2011 Volume: 5 Issue: 3 346 - 352 Pages

Abstract: In this study, the Taguchi method was used to optimize the effect of HALO structure or halo implant variations on threshold voltage (VTH) and leakage current (ILeak) in 45nm p-type Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) device. Besides halo implant dose, the other process parameters which used were Source/Drain (S/D) implant dose, oxide growth temperature and silicide anneal temperature. This work was done using TCAD simulator, consisting of a process simulator, ATHENA and device simulator, ATLAS. These two simulators were combined with Taguchi method to aid in design and optimize the process parameters. In this research, the most effective process parameters with respect to VTH and ILeak are halo implant dose (40%) and S/D implant dose (52%) respectively. Whereas the second ranking factor affecting VTH and ILeak are oxide growth temperature (32%) and halo implant dose (34%) respectively. The results show that after optimizations approaches is -0.157V at ILeak=0.195mA/μm.

A New True RMS-to-DC Converter in CMOS Technology

Year: 2010 Volume: 4 Issue: 11 1634 - 1637 Pages

Abstract: This paper presents a new true RMS-to-DC converter circuit based on a square-root-domain squarer/divider. The circuit is designed by employing up-down translinear loop and using of MOSFET transistors that operate in strong inversion saturation region. The converter offer advantages of two-quadrant input current, low circuit complexity, low supply voltage (1.2V) and immunity from the body effect. The circuit has been simulated by HSPICE. The simulation results are seen to conform to the theoretical analysis and shows benefits of the proposed circuit.

Design and Control of DC-DC Converter for the Military Application Fuel Cell

Year: 2010 Volume: 4 Issue: 11 1207 - 1212 Pages

Abstract: This paper presents a 24 watts SEPIC converter design and control using microprocessor. SEPIC converter has advantages of a wide input range and miniaturization caused by the low stress at elements. There is also an advantage that the input and output are isolated in MOSFET-off state. This paper presents the PID control through the SEPIC converter transfer function using a DSP and the protective circuit for fuel cell from the over-current and inverse-voltage by using the characteristic of SEPIC converter. Then it derives them through the experiments.

Two-dimensional Analytical Drain Current Model for Multilayered-Gate Material Engineered Trapezoidal Recessed Channel(MLGME-TRC) MOSFET: a Novel Design

Year: 2010 Volume: 4 Issue: 4 723 - 727 Pages

Abstract: In this paper, for the first time, a two-dimensional (2D) analytical drain current model for sub-100 nm multi-layered gate material engineered trapezoidal recessed channel (MLGMETRC) MOSFET: a novel design is presented and investigated using ATLAS and DEVEDIT device simulators, to mitigate the large gate leakages and increased standby power consumption that arise due to continued scaling of SiO2-based gate dielectrics. The twodimensional (2D) analytical model based on solution of Poisson-s equation in cylindrical coordinates, utilizing the cylindrical approximation, has been developed which evaluate the surface potential, electric field, drain current, switching metric: ION/IOFF ratio and transconductance for the proposed design. A good agreement between the model predictions and device simulation results is obtained, verifying the accuracy of the proposed analytical model.

Analysis of Current Mirror in 32nm MOSFET and CNTFET Technologies

Year: 2011 Volume: 5 Issue: 12 1711 - 1714 Pages

Abstract: There is need to explore emerging technologies based on carbon nanotube electronics as the MOS technology is approaching its limits. As MOS devices scale to the nano ranges, increased short channel effects and process variations considerably effect device and circuit designs. As a promising new transistor, the Carbon Nanotube Field Effect Transistor(CNTFET) avoids most of the fundamental limitations of the Traditional MOSFET devices. In this paper we present the analysis and comparision of a Carbon Nanotube FET(CNTFET) based 10(A current mirror with MOSFET for 32nm technology node. The comparision shows the superiority of the former in terms of 97% increase in output resistance,24% decrease in power dissipation and 40% decrease in minimum voltage required for constant saturation current. Furthermore the effect on performance of current mirror due to change in chirality vector of CNT has also been investigated. The circuit simulations are carried out using HSPICE model.

C-V Characterization and Analysis of Temperature and Channel Thickness Effects on Threshold Voltage of Ultra-thin SOI MOSFET by Self-Consistent Model

Year: 2010 Volume: 4 Issue: 9 1362 - 1367 Pages

Abstract: The threshold voltage and capacitance voltage characteristics of ultra-thin Silicon-on-Insulator MOSFET are greatly influenced by the thickness and doping concentration of the silicon film. In this work, the capacitance voltage characteristics and threshold voltage of the device have been analyzed with quantum mechanical effects using the Self-Consistent model. Reduction of channel thickness and adding doping impurities cause an increase in the threshold voltage. Moreover, the temperature effects cause a significant amount of threshold voltage shift. The temperature dependence of threshold voltage has also been observed with Self- Consistent approach which are well supported from experimental performance of practical devices.

A Low-Voltage Current-Mode Wheatstone Bridge using CMOS Transistors

Year: 2011 Volume: 5 Issue: 10 1324 - 1328 Pages

Authors:
Ebrahim Farshidi

Abstract: This paper presents a new circuit arrangement for a current-mode Wheatstone bridge that is suitable for low-voltage integrated circuits implementation. Compared to the other proposed circuits, this circuit features severe reduction of the elements number, low supply voltage (1V) and low power consumption (

A Comparative Study of Electrical Transport Phenomena in Ultrathin vs. Nanoscale SOI MOSFETs Devices

Year: 2013 Volume: 7 Issue: 1 12 - 16 Pages

Abstract: Ultrathin (UTD) and Nanoscale (NSD) SOI-MOSFET devices, sharing a similar W/L but with a channel thickness of 46nm and 1.6nm respectively, were fabricated using a selective “gate recessed” process on the same silicon wafer. The electrical transport characterization at room temperature has shown a large difference between the two kinds of devices and has been interpreted in terms of a huge unexpected series resistance. Electrical characteristics of the Nanoscale device, taken in the linear region, can be analytically derived from the ultrathin device ones. A comparison of the structure and composition of the layers, using advanced techniques such as Focused Ion Beam (FIB) and High Resolution TEM (HRTEM) coupled with Energy Dispersive X-ray Spectroscopy (EDS), contributes an explanation as to the difference of transport between the devices.

Analysis of a Novel Strained Silicon RF LDMOS

Year: 2010 Volume: 4 Issue: 9 1357 - 1361 Pages

Abstract: In this paper we propose a novel RF LDMOS structure which employs a thin strained silicon layer at the top of the channel and the N-Drift region. The strain is induced by a relaxed Si0.8 Ge0.2 layer which is on top of a compositionally graded SiGe buffer. We explain the underlying physics of the device and compare the proposed device with a conventional LDMOS in terms of energy band diagram and carrier concentration. Numerical simulations of the proposed strained silicon laterally diffused MOS using a 2 dimensional device simulator indicate improvements in saturation and linear transconductance, current drivability, cut off frequency and on resistance. These improvements are however accompanied with a suppression in the break down voltage.

Simulation Study of Lateral Trench Gate Power MOSFET on 4H-SiC

Year: 2014 Volume: 8 Issue: 2 217 - 220 Pages

Abstract: A lateral trench-gate power metal-oxide-semiconductor on 4H-SiC is proposed. The device consists of two separate trenches in which two gates are placed on both sides of P-body region resulting two parallel channels. Enhanced current conduction and reduced-surface-field effect in the structure provide substantial improvement in the device performance. Using two dimensional simulations, the performance of proposed device is evaluated and compare of with that of the conventional device for same cell pitch. It is demonstrated that the proposed structure provides two times higher output current, 11% decrease in threshold voltage, 70% improvement in transconductance, 70% reduction in specific ON-resistance, 52% increase in breakdown voltage, and nearly eight time improvement in figure-of-merit over the conventional device.

A Novel Source/Drain-to-Gate Non-overlap MOSFET to Reduce Gate Leakage Current in Nano Regime

Year: 2011 Volume: 5 Issue: 10 1102 - 1108 Pages

Abstract: In this paper, gate leakage current has been mitigated by the use of novel nanoscale MOSFET with Source/Drain-to-Gate Non-overlapped and high-k spacer structure for the first time. A compact analytical model has been developed to study the gate leakage behaviour of proposed MOSFET structure. The result obtained has found good agreement with the Sentaurus Simulation. Fringing gate electric field through the dielectric spacer induces inversion layer in the non-overlap region to act as extended S/D region. It is found that optimal Source/Drain-to-Gate Non-overlapped and high-k spacer structure has reduced the gate leakage current to great extent as compared to those of an overlapped structure. Further, the proposed structure had improved off current, subthreshold slope and DIBL characteristic. It is concluded that this structure solves the problem of high leakage current without introducing the extra series resistance.

New Gate Stack Double Diffusion MOSFET Design to Improve the Electrical Performances for Power Applications

Year: 2010 Volume: 4 Issue: 12 1718 - 1721 Pages

Abstract: In this paper, we have developed an explicit analytical drain current model comprising surface channel potential and threshold voltage in order to explain the advantages of the proposed Gate Stack Double Diffusion (GSDD) MOSFET design over the conventional MOSFET with the same geometric specifications that allow us to use the benefits of the incorporation of the high-k layer between the oxide layer and gate metal aspect on the immunity of the proposed design against the self-heating effects. In order to show the efficiency of our proposed structure, we propose the simulation of the power chopper circuit. The use of the proposed structure to design a power chopper circuit has showed that the (GSDD) MOSFET can improve the working of the circuit in terms of power dissipation and self-heating effect immunity. The results so obtained are in close proximity with the 2D simulated results thus confirming the validity of the proposed model.

Implementation and Simulation of Half-Bridge Series Resonant Inverter in Zero Voltage Switching

Year: 2011 Volume: 5 Issue: 11 1417 - 1421 Pages

Authors:
Buket Turan Azizoğlu

Abstract: In switch mode power inverters, small sized inverters can be obtained by increasing the switching frequency. Switching frequency increment causes high driver losses. Also, high dt di and dt dv produced by the switching action creates high Electromagnetic Interference (EMI) and Radio Frequency Interference (RFI). In this paper, a series half bridge series resonant inverter circuit is simulated and evaluated practically to demonstrate the turn-on and turn-off conditions during zero or close to zero voltage switching. Also, the reverse recovery current effects of the body diode of the MOSFETs were investigated by operating above and below resonant frequency.

Efficiency Enhancement of PWM Controlled Water Electrolysis Cells

Year: 2011 Volume: 5 Issue: 2 130 - 134 Pages

Abstract: By analyzing the sources of energy and power loss in PWM (Pulse Width Modulation) controlled drivers of water electrolysis cells, it is possible to reduce the power dissipation and enhance the efficiency of such hydrogen production units. A PWM controlled power driver is based on a semiconductor switching element where its power dissipation might be a remarkable fraction of the total power demand of an electrolysis system. Power dissipation in a semiconductor switching element is related to many different parameters which could be fitted into two main categories: switching losses and conduction losses. Conduction losses are directly related to the built, structure and capabilities of a switching device itself and indeed the conditions in which the element is handling the switching application such as voltage, current, temperature and of course the fabrication technology. On the other hand, switching losses have some other influencing variables other than the mentioned such as control system, switching method and power electronics circuitry of the PWM power driver. By analyzings the characteristics of recently developed power switching transistors from different families of Bipolar Junction Transistors (BJT), Metal Oxide Semiconductor Field Effect Transistors (MOSFET) and Insulated Gate Bipolar Transistors (IGBT), some recommendations are made in this paper which are able to lead to achieve higher hydrogen production efficiency by utilizing PWM controlled water electrolysis cells.

Analytical Modeling of Channel Noise for Gate Material Engineered Surrounded/Cylindrical Gate (SGT/CGT) MOSFET

Year: 2010 Volume: 4 Issue: 4 701 - 704 Pages

Abstract: In this paper, an analytical modeling is presentated to describe the channel noise in GME SGT/CGT MOSFET, based on explicit functions of MOSFETs geometry and biasing conditions for all channel length down to deep submicron and is verified with the experimental data. Results shows the impact of various parameters such as gate bias, drain bias, channel length ,device diameter and gate material work function difference on drain current noise spectral density of the device reflecting its applicability for circuit design applications.

3D Quantum Numerical Simulation of Horizontal Rectangular Dual Metal Gate\Gate All Around MOSFETs

Year: 2014 Volume: 8 Issue: 4 658 - 661 Pages

Abstract: The integrity and issues related to electrostatic performance associated with scaling Si MOSFET bulk sub 10nm channel length promotes research in new device architectures such as SOI, double gate and GAA MOSFET. In this paper, we present some novel characteristic of horizontal rectangular gate\gate all around MOSFETs with dual metal of gate we obtained using SILVACO TCAD tools. We will also exhibit some simulation results we obtained relating to the influence of some parameters variation on our structure, that having a direct impact on their threshold voltage and drain current. In addition, our TFET showed reasonable ION/IOFF ratio of (104) and low drain induced barrier lowering (DIBL) of 39 mV/V.

Keywords:
GAA
SILVACO
QUANTUM
MOSFETs.

A Low Voltage High Performance Self Cascode Current Mirror

Year: 2008 Volume: 2 Issue: 5 712 - 715 Pages

Abstract: A current mirror (CM) based on self cascode MOSFETs low voltage analog and mixed mode structures has been proposed. The proposed CM has high output impedance and can operate at 0.5 V. P-Spice simulations confirm the high performance of this CM with a bandwidth of 6.0 GHz at input current of 100 μA.

Top Journal

SUGGEST A JOURNAL