Abstract: This work deals with the designing of an efficient low noise amplifier for 10.00 GHz applications. The amplifier is designed using Gallium Arsenide High Electron Mobility Transistor (GaAs HEMT) ATF – 36077 with inductive source degeneration technique which is one of the techniques to improve the stability of the potentially unstable device and make it unconditionally stable. Also, different substrates are used for designing the LNA to identify the suitable substrate that gives optimum results. It is observed that the noise immunity is more in Low Noise Amplifier (LNA) designed using RT Duroid 5880 substrate. This design resulted in noise figure of 0.859 dB and power gain of 15.530 dB. The comparative analysis of the LNA design is discussed in this paper.
Abstract: In this paper, a fraction-order model for pad parasitic effect of GaN HEMT on Si substrate is developed and validated. Open de-embedding structure is used to characterize and de-embed substrate loading parasitic effects. Unbiased device measurements are implemented to extract parasitic inductances and resistances. The model shows very good simulation for S-parameter measurements under different bias conditions. It has been found that this approach can improve the simulation of intrinsic part of the transistor, which is very important for small- and large-signal modeling process.
Abstract: In this study, we report calculations of gate capacitance of AlGaN/GaN HEMTs with nextnano device simulation software. We have used a physical gate capacitance model for III-V FETs that incorporates quantum capacitance and centroid capacitance in the channel. These simulations explore various device structures with different values of barrier thickness and channel thickness. A detailed understanding of the impact of gate capacitance in HEMTs will allow us to determine their role in future 10 nm physical gate length node.
Abstract: In this paper, a genetic-neural-network (GNN) based large-signal model for GaN HEMTs is presented along with its parameters extraction procedure. The model is easy to construct and implement in CAD software and requires only DC and S-parameter measurements. An improved decomposition technique is used to model self-heating effect. Two GNN models are constructed to simulate isothermal drain current and power dissipation, respectively. The two model are then composed to simulate the drain current. The modeling procedure was applied to a packaged GaN-on-Si HEMT and the developed model is validated by comparing its large-signal simulation with measured data. A very good agreement between the simulation and measurement is obtained.
Abstract: The out-of-band impedance environment is considered
to be of paramount importance in engineering the in-band impedance
environment. Presenting the frequency independent and constant outof-
band impedances across the wide modulation bandwidth is
extremely important for reliable device characterization for future
wireless systems. This paper presents an out-of-band impedance
optimization scheme based on simultaneous engineering of
significant baseband components IF1 (twice the modulation
frequency) and IF2 (four times the modulation frequency) and higher
baseband components such as IF3 (six times the modulation
frequency) and IF4 (eight times the modulation frequency) to
engineer the in-band impedance environment. The investigations
were carried out on a 10W GaN HEMT device driven to deliver a
peak envelope power of approximately 40.5dBm under modulated
excitation. The presentation of frequency independent baseband
impedances to all the significant baseband components whilst
maintaining the optimum termination for fundamental tones as well
as reactive termination for 2nd harmonic under class-J mode of
operation has outlined separate optimum impedances for best
intermodulation (IM) linearity.
Abstract: This article proposes a new method for application in
communication circuit systems that increase efficiency, PAE, output
power and gain in the circuit. The proposed method is based on a
combination of switching class-E and class-J and has been termed
class-EJ. This method was investigated using both theory and
simulation to confirm ∼72% PAE and output power of >39dBm. The
combination and design of the proposed power amplifier accrues gain
of over 15dB in the 2.9 to 3.5GHz frequency bandwidth. This circuit
was designed using MOSFET and high power transistors. The loadand
source-pull method achieved the best input and output networks
using lumped elements. The proposed technique was investigated for
fundamental and second harmonics having desirable amplitudes for
the output signal.
Abstract: A novel technique has been developed to generate ultra-stable millimeter-wave signal by optical heterodyning of the output from two slave laser (SL) sources injection-locked to the sidebands of a frequency modulated (FM) master laser (ML). Precise thermal tuning of the SL sources is required to lock the particular slave laser frequency to the desired FM sidebands of the ML. The output signals from the injection-locked SL when coherently heterodyned in a fast response photo detector like high electron mobility transistor (HEMT), extremely stable millimeter-wave signal having very narrow line width can be generated. The scheme may also be used to generate ultra-stable sub-millimeter-wave/terahertz signal.
Abstract: The objective of this paper is to simulate static I-V and dynamic characteristics of an appropriated and recessed n-GaN/AlxGa1-xN/GaN high electron mobility (HEMT). Using SILVACO TCAD device simulation, and optimized technological parameters; we calculate the drain-source current (lDS) as a function of the drain-source voltage (VDS) for different values of the gate-source voltage (VGS), and the drain-source current (lDS) depending on the gate-source voltage (VGS) for a drain-source voltage (VDS) of 20 V, for various temperatures. Then, we calculate the cut-off frequency and the maximum oscillation frequency for different temperatures.
We obtain a high drain-current equal to 60 mA, a low knee voltage (Vknee) of 2 V, a high pinch-off voltage (VGS0) of 53.5 V, a transconductance greater than 600 mS/mm, a cut-off frequency (fT) of about 330 GHz, and a maximum oscillation frequency (fmax) of about 1 THz.
Abstract: This research explores on the development of the structure of Carbon Credit Registry System those accords to the need of future events in Thailand. This research also explores the big picture of every connected system by referring to the design of each system, the Data Flow Diagram, and the design in term of the system-s data using DES standard. The purpose of this paper is to show how to design the model of each system. Furthermore, this paper can serve as guideline for designing an appropriate Carbon Credit Registry System.
Abstract: The design of Class A and Class AB 2-stage X band
Power Amplifier is described in this report. This power amplifier is
part of a transceiver used in radar for monitoring iron characteristics
in a blast furnace. The circuit was designed using foundry WIN
Semiconductors. The specification requires 15dB gain in the linear
region, VSWR nearly 1 at input as well as at the output, an output
power of 10 dBm and good stable performance in the band 10.9-12.2
GHz. The design was implemented by using inter-stage
configuration, the Class A amplifier was chosen for driver stage i.e.
the first amplifier focusing on the gain and the output amplifier
conducted at Class AB with more emphasis on output power.
Abstract: A proposed small-signal model parameters for a pseudomorphic high electron mobility transistor (PHEMT) is presented. Both extrinsic and intrinsic circuit elements of a smallsignal model are determined using genetic algorithm (GA) as a stochastic global search and optimization tool. The parameters extraction of the small-signal model is performed on 200-μm gate width AlGaAs/InGaAs PHEMT. The equivalent circuit elements for a proposed 18 elements model are determined directly from the measured S- parameters. The GA is used to extract the parameters of the proposed small-signal model from 0.5 up to 18 GHz.
Abstract: An optimized design of E/O and O/E for access points
of WiMAX RoF was carried out by evaluating RCE. The use of the
DFB-LD, a low input-impedance driving, a low distortion PIN-PD,
and a high gain EPHEMT amplifier is promising the cost-effective
design. For the uplink RoF design, the use of EDFA and EP-HEMT
amplifiers is necessity.
Abstract: A simple analytical model has been developed to
optimize biasing conditions for obtaining maximum linearity among
lattice-matched, pseudomorphic and metamorphic HEMT types as
well as enhancement and depletion HEMT modes. A nonlinear
current-voltage model has been simulated based on extracted data to
study and select the most appropriate type and mode of HEMT in
terms of a given gate-source biasing voltage within the device so as
to employ the circuit for the highest possible output current or
voltage linear swing. Simulation results can be used as a basis for the
selection of optimum gate-source biasing voltage for a given type
and mode of HEMT with regard to a circuit design. The
consequences can also be a criterion for choosing the optimum type
or mode of HEMT for a predetermined biasing condition.
Abstract: The crystalline quality of the AlGaN/GaN high electron mobility transistor (HEMT) structure grown on a 200 mm silicon substrate has been investigated using UV-visible micro- Raman scattering and photoluminescence (PL). The visible Raman scattering probes the whole nitride stack with the Si substrate and shows the presence of a small component of residual in-plane stress in the thick GaN buffer resulting from a wafer bowing, while the UV micro-Raman indicates a tensile interfacial stress induced at the top GaN/AlGaN/AlN layers. PL shows a good crystal quality GaN channel where the yellow band intensity is very low compared to that of the near-band-edge transition. The uniformity of this sample is shown by measurements from several points across the epiwafer.
Abstract: In this work, the physical based device model of
AlGaN/GaN high electron mobility transistors (HEMTs) has been
established and the corresponding device operation behavior has
been investigated also by using Sentaurus TCAD from Synopsys.
Advanced AlGaN/GaN hetero-structures with GaN cap layer and AlN
spacer have been considered and the GaN cap layer and AlN spacer
are found taking important roles on the gate leakage blocking and
off-state breakdown voltage enhancement.
Abstract: Due to the high increase in and demand for a wide assortment of applications that require low-cost, high-efficiency, and compact systems, RF power amplifiers are considered the most critical design blocks and power consuming components in wireless communication, TV transmission, radar, and RF heating. Therefore, much research has been carried out in order to improve the performance of power amplifiers. Classes-A, B, C, D, E and F are the main techniques for realizing power amplifiers.
An implementation of high efficiency class-F power amplifier with Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) was realized in this paper. The simulation and optimization of the class-F power amplifier circuit model was undertaken using Agilent’s Advanced Design system (ADS). The circuit was designed using lumped elements.