Raman Scattering and PL Studies on AlGaN/GaN HEMT Layers on 200 mm Si(111)
The crystalline quality of the AlGaN/GaN high electron mobility transistor (HEMT) structure grown on a 200 mm silicon substrate has been investigated using UV-visible micro- Raman scattering and photoluminescence (PL). The visible Raman scattering probes the whole nitride stack with the Si substrate and shows the presence of a small component of residual in-plane stress in the thick GaN buffer resulting from a wafer bowing, while the UV micro-Raman indicates a tensile interfacial stress induced at the top GaN/AlGaN/AlN layers. PL shows a good crystal quality GaN channel where the yellow band intensity is very low compared to that of the near-band-edge transition. The uniformity of this sample is shown by measurements from several points across the epiwafer.
[1] Y. Dora; A. Chakraborty, L. McCarthy, S. Keller, S. P. DenBaars, and
U. K. Mishra, "High Breakdown Voltage Achieved on AlGaN/GaN
HEMTs with Integrated Slant Field Plates", IEEE Electron Device Lett.,
vol. 27, pp. 713-715, 2006.
[2] Tanya Paskova and Keith R. Evans, "GaN Substrates-Progress, Status,
and Prospects", IEEE J. Selected Topics in Quantum Electron., vol. 15,
pp. 1041-1052, July/Aug. 2009.
[3] P. Chen, R. Zhang, Z. M. Zhao, D. J. Xi, B. Shen, Z. Z. Chen, Y. G.
Zhou, S. Y. Xie, W. F. Lu, and Y. D. Zheng, "Growth of high quality
GaN layers with AlN buffer on Si(111) substrates", J. Cryst. Growth,
vol. 225, pp. 150-154, 2001.
[4] K. Cheng, M. Leys, S. Degroote, B. Van Daele, S. Boeykens, J.
Derluyn, M. Germain, G. Van Tendeloo, J. Engelen, and G. Borghs,
"Flat GaN Epitaxial Layers Grown on Si(111) by Metalorganic Vapor
Phase Epitaxy Using Step-Graded AlGaN Intermediate Layers", J.
Electron. Mater., vol. 35, pp. 592-598, 2006.
[5] A. Able, W. Wegscheider, K. Engl, and J. Zweck, "Growth of crack-free
GaN on Si(111) with graded AlGaN buffer layers", J. Cryst. Growth,
vol. 276, pp. 415-418, 2005.
[6] E. Feltin, B. Beaumont, M. La├╝gt, P. de Mierry, P. Vennéguès, H.
Lahrèche, M. Leroux, and P. Gibart, " Stress control in GaN grown on
silicon (111) by metalorganic vapor phase epitaxy", Appl. Phys. Lett.,
vol. 79, pp. 3230-3232, 2001.
[7] Eric Frayssinet, Yvon Cordier, H. P. David Schenk, and Alexis Bavard,
"Growth of thick GaN layers on 4-in. and 6-in. silicon (111) by metal
organic vapor phase epitaxy", Phys. Status Solidi C, vol. 8, pp. 1479-
1482, 2011.
[8] A. Dadgar, T. Hempel, J. Bläsing, O. schulz, S. Fritze, J. Christen, and
A. Krost, "Improving GaN-on-silicon properties for GaN device
epitaxy", Phys. Status Solidi C, vol. 8, pp. 1503-1508, 2011.
[9] E. Feltin, B. Beaumont, P. Vennéguès, M. Vaille, and P. Gibart,
"Epitaxial lateral overgrowth of GaN on Si (111)", J. Appl. Phys., vol.
93, pp. 182-185, Jan. 2003.
[10] R. F. Davis, T. Gehrke, K. J. Linthicum, E. Preble, P. Rajagopal, C.
Ronning, C. Zorman, M. Mehregany, "Conventional and pendeoepitaxial
growth of GaN(0001) thin films on Si(111) substrates", J.
Cryst. Growth, vol. 231, pp. 335-341, 2001.
[11] S. Tripathy, S. J. Chua, P. Chen, and Z. L. Miao, "Micro-Raman
investigation of strain in GaN and AlxGa1-xN/GaN heterostructures
grown on Si(111)", J. Appl. Phys., vol. 92, pp. 3503-3510, Oct. 2002.
[12] M. Kuball, "Raman spectroscopy of GaN, AlGaN and AlN for process
and growth monitoring/control", Surf. Interface Anal., vol. 31, pp. 987-
999, 2001.
[13] M. Yoshikawa, J. Wagner, H. Obloh, M. Kunzer, and M. Maier,
"Resonant Raman scattering from buried AlxGa1-xN (xÔëñ0.17) layers in
(Al,Ga,In)N heterostructures", J. Appl. Phys., vol. 87, pp. 2853-2856,
2000.
[1] Y. Dora; A. Chakraborty, L. McCarthy, S. Keller, S. P. DenBaars, and
U. K. Mishra, "High Breakdown Voltage Achieved on AlGaN/GaN
HEMTs with Integrated Slant Field Plates", IEEE Electron Device Lett.,
vol. 27, pp. 713-715, 2006.
[2] Tanya Paskova and Keith R. Evans, "GaN Substrates-Progress, Status,
and Prospects", IEEE J. Selected Topics in Quantum Electron., vol. 15,
pp. 1041-1052, July/Aug. 2009.
[3] P. Chen, R. Zhang, Z. M. Zhao, D. J. Xi, B. Shen, Z. Z. Chen, Y. G.
Zhou, S. Y. Xie, W. F. Lu, and Y. D. Zheng, "Growth of high quality
GaN layers with AlN buffer on Si(111) substrates", J. Cryst. Growth,
vol. 225, pp. 150-154, 2001.
[4] K. Cheng, M. Leys, S. Degroote, B. Van Daele, S. Boeykens, J.
Derluyn, M. Germain, G. Van Tendeloo, J. Engelen, and G. Borghs,
"Flat GaN Epitaxial Layers Grown on Si(111) by Metalorganic Vapor
Phase Epitaxy Using Step-Graded AlGaN Intermediate Layers", J.
Electron. Mater., vol. 35, pp. 592-598, 2006.
[5] A. Able, W. Wegscheider, K. Engl, and J. Zweck, "Growth of crack-free
GaN on Si(111) with graded AlGaN buffer layers", J. Cryst. Growth,
vol. 276, pp. 415-418, 2005.
[6] E. Feltin, B. Beaumont, M. La├╝gt, P. de Mierry, P. Vennéguès, H.
Lahrèche, M. Leroux, and P. Gibart, " Stress control in GaN grown on
silicon (111) by metalorganic vapor phase epitaxy", Appl. Phys. Lett.,
vol. 79, pp. 3230-3232, 2001.
[7] Eric Frayssinet, Yvon Cordier, H. P. David Schenk, and Alexis Bavard,
"Growth of thick GaN layers on 4-in. and 6-in. silicon (111) by metal
organic vapor phase epitaxy", Phys. Status Solidi C, vol. 8, pp. 1479-
1482, 2011.
[8] A. Dadgar, T. Hempel, J. Bläsing, O. schulz, S. Fritze, J. Christen, and
A. Krost, "Improving GaN-on-silicon properties for GaN device
epitaxy", Phys. Status Solidi C, vol. 8, pp. 1503-1508, 2011.
[9] E. Feltin, B. Beaumont, P. Vennéguès, M. Vaille, and P. Gibart,
"Epitaxial lateral overgrowth of GaN on Si (111)", J. Appl. Phys., vol.
93, pp. 182-185, Jan. 2003.
[10] R. F. Davis, T. Gehrke, K. J. Linthicum, E. Preble, P. Rajagopal, C.
Ronning, C. Zorman, M. Mehregany, "Conventional and pendeoepitaxial
growth of GaN(0001) thin films on Si(111) substrates", J.
Cryst. Growth, vol. 231, pp. 335-341, 2001.
[11] S. Tripathy, S. J. Chua, P. Chen, and Z. L. Miao, "Micro-Raman
investigation of strain in GaN and AlxGa1-xN/GaN heterostructures
grown on Si(111)", J. Appl. Phys., vol. 92, pp. 3503-3510, Oct. 2002.
[12] M. Kuball, "Raman spectroscopy of GaN, AlGaN and AlN for process
and growth monitoring/control", Surf. Interface Anal., vol. 31, pp. 987-
999, 2001.
[13] M. Yoshikawa, J. Wagner, H. Obloh, M. Kunzer, and M. Maier,
"Resonant Raman scattering from buried AlxGa1-xN (xÔëñ0.17) layers in
(Al,Ga,In)N heterostructures", J. Appl. Phys., vol. 87, pp. 2853-2856,
2000.
@article{"International Journal of Electrical, Electronic and Communication Sciences:53161", author = "W. Z. Wang and S. Todd and S. B. Dolmanan and K. B. Lee and L. Yuan and H. F. Sun and S. L. Selvaraj and M.Krishnakumar and G. Q. Lo and S. Tripathy", title = "Raman Scattering and PL Studies on AlGaN/GaN HEMT Layers on 200 mm Si(111)", abstract = "The crystalline quality of the AlGaN/GaN high electron mobility transistor (HEMT) structure grown on a 200 mm silicon substrate has been investigated using UV-visible micro- Raman scattering and photoluminescence (PL). The visible Raman scattering probes the whole nitride stack with the Si substrate and shows the presence of a small component of residual in-plane stress in the thick GaN buffer resulting from a wafer bowing, while the UV micro-Raman indicates a tensile interfacial stress induced at the top GaN/AlGaN/AlN layers. PL shows a good crystal quality GaN channel where the yellow band intensity is very low compared to that of the near-band-edge transition. The uniformity of this sample is shown by measurements from several points across the epiwafer.
", keywords = "Raman, photo luminescence, AlGaN/GaN, HEMT.", volume = "6", number = "9", pages = "922-4", }
