Abstract: The objective of this paper is to simulate static I-V and dynamic characteristics of an appropriated and recessed n-GaN/AlxGa1-xN/GaN high electron mobility (HEMT). Using SILVACO TCAD device simulation, and optimized technological parameters; we calculate the drain-source current (lDS) as a function of the drain-source voltage (VDS) for different values of the gate-source voltage (VGS), and the drain-source current (lDS) depending on the gate-source voltage (VGS) for a drain-source voltage (VDS) of 20 V, for various temperatures. Then, we calculate the cut-off frequency and the maximum oscillation frequency for different temperatures.
We obtain a high drain-current equal to 60 mA, a low knee voltage (Vknee) of 2 V, a high pinch-off voltage (VGS0) of 53.5 V, a transconductance greater than 600 mS/mm, a cut-off frequency (fT) of about 330 GHz, and a maximum oscillation frequency (fmax) of about 1 THz.
Abstract: This paper describes a low-voltage and low-power
channel selection analog front end with continuous-time low pass
filters and highly linear programmable gain amplifier (PGA). The
filters were realized as balanced Gm-C biquadratic filters to achieve a
low current consumption. High linearity and a constant wide
bandwidth are achieved by using a new transconductance (Gm) cell.
The PGA has a voltage gain varying from 0 to 65dB, while
maintaining a constant bandwidth. A filter tuning circuit that requires
an accurate time base but no external components is presented.
With a 1-Vrms differential input and output, the filter achieves
-85dB THD and a 78dB signal-to-noise ratio. Both the filter and PGA
were implemented in a 0.18um 1P6M n-well CMOS process. They
consume 3.2mW from a 1.8V power supply and occupy an area of
0.19mm2.