Abstract: In this paper an extensive verification of the extraction
method (published earlier) that consistently accounts for self-heating
and Early effect to accurately extract both base and thermal resistance
of bipolar junction transistors is presented. The method verification is
demonstrated on advanced RF SiGe HBTs were the extracted results
for the thermal resistance are compared with those from another
published method that ignores the effect of Early effect on internal
base-emitter voltage and the extracted results of the base resistance
are compared with those determined from noise measurements. A
self-consistency of our method in the extracted base resistance and
thermal resistance using compact model simulation results is also
carried out in order to study the level of accuracy of the method.
Abstract: RF performance of SOI CMOS device has attracted
significant amount of interest recently. In order to improve RF
parameters, Strained Si/Relaxed Si0.8Ge0.2 investigated as a
replacement for Si technology .Enhancement of carrier mobility
associated with strain engineering makes Strained Si a promising
candidate for improving RF performance of CMOS technology.
From the simulation, the cut-off frequency is estimated to be 224
GHZ, whereas in SOI at similar bias is about 188 GHZ. Therefore,
Strained Si exhibits 19% improvement in cut-off frequency over
similar Si counterpart. In this paper, Ion/Ioff ratio is studied as one of
the key parameters in logic and digital application. Strained Si/SiGe
demonstrates better Ion/Ioff characteristic than SOI, in similar channel
length of 100 nm.Another important key analog figures of merit such
as Early Voltage (VEA) ,transconductance vs drain current (gm /Ids)
are studied. They introduce the efficiency of the devices to convert
dc power into ac frequency.