Abstract: In this paper an extensive verification of the extraction
method (published earlier) that consistently accounts for self-heating
and Early effect to accurately extract both base and thermal resistance
of bipolar junction transistors is presented. The method verification is
demonstrated on advanced RF SiGe HBTs were the extracted results
for the thermal resistance are compared with those from another
published method that ignores the effect of Early effect on internal
base-emitter voltage and the extracted results of the base resistance
are compared with those determined from noise measurements. A
self-consistency of our method in the extracted base resistance and
thermal resistance using compact model simulation results is also
carried out in order to study the level of accuracy of the method.