Ab initio Study of Co2ZrGe and Co2NbB Full Heusler Compounds

Using the first-principles full-potential linearized augmented plane wave plus local orbital (FP-LAPW+lo) method based on density functional theory (DFT), we have investigated the electronic structure and magnetism of full Heusler alloys Co2ZrGe and Co2NbB. These compounds are predicted to be half-metallic ferromagnets (HMFs) with a total magnetic moment of 2.000 B per formula unit, well consistent with the Slater-Pauling rule. Calculations show that both the alloys have an indirect band gaps, in the minority-spin channel of density of states (DOS), with values of 0.58 eV and 0.47 eV for Co2ZrGe and Co2NbB, respectively. Analysis of the DOS and magnetic moments indicates that their magnetism is mainly related to the d-d hybridization between the Co and Zr (or Nb) atoms. The half-metallicity is found to be relatively robust against volume changes. In addition, an atom inside molecule AIM formalism and an electron localization function ELF were also adopted to study the bonding properties of these compounds, building a bridge between their electronic and bonding behavior. As they have a good crystallographic compatibility with the lattice of semiconductors used industrially and negative calculated cohesive energies with considerable absolute values these two alloys could be promising magnetic materials in the spintronic field.

Novel Design of Quantum Dot Arrays to Enhance Near-Fields Excitation Resonances

Semiconductor crystals smaller than about 10 nm, known as quantum dots, have properties that differ from large samples, including a band gap that becomes larger for smaller particles. These properties create several applications for quantum dots. In this paper new shapes of quantum dot arrays are used to enhance the photo physical properties of gold nano-particles. This paper presents a study of the effect of nano-particles shape, array, and size on their absorption characteristics.

Effects of Position and Shape of Atomic Defects on the Band Gap of Graphene Nano Ribbon Superlattices

In this work, we study the behavior of introducing atomic size vacancy in a graphene nanoribbon superlattice. Our investigations are based on the density functional theory (DFT) with the Local Density Approximation in Atomistix Toolkit (ATK). We show that, in addition to its shape, the position of vacancy has a major impact on the electrical properties of a graphene nanoribbon superlattice. We show that the band gap of an armchair graphene nanoribbon may be tuned by introducing an appropriate periodic pattern of vacancies. The band gap changes in a zig-zag manner similar to the variation of band gap of a graphene nanoribbon by changing its width.

Effect of Cr and Fe Doping on the Structural and Optical Properties of ZnO Nanostructures

In the present study, we have synthesized Cr and Fe doped zinc oxide (ZnO) nanostructures (Zn1-δCraFebO; where δ = a + b = 20%, a = 5, 6, 8 & 10% and b = 15, 14, 12 & 10%) via sol-gel method at different doping concentrations. The synthesized samples were characterized for structural properties by X-ray diffractrometer and field emission scanning electron microscope and the optical properties were carried out through photoluminescence and UVvisible spectroscopy. The particle size calculated through field emission scanning electron microscope varies from 41 to 96 nm for the samples synthesized at different doping concentrations. The optical band gaps calculated through UV-visible spectroscopy are found to be decreasing from 3.27 to 3.02 eV as the doping concentration of Cr increases and Fe decreases.

Transient Enhanced LDO Voltage Regulator with Improved Feed Forward Path Compensation

Anultra-low power capacitor less low-dropout voltage regulator with improved transient response using gain enhanced feed forward path compensation is presented in this paper. It is based on a cascade of a voltage amplifier and a transconductor stage in the feed forward path with regular error amplifier to form a composite gainenhanced feed forward stage. It broadens the gain bandwidth and thus improves the transient response without substantial increase in power consumption. The proposed LDO, designed for a maximum output current of 100 mA in UMC 180 nm, requires a quiescent current of 69 )A. An undershot of 153.79mV for a load current changes from 0mA to 100mA and an overshoot of 196.24mV for current change of 100mA to 0mA. The settling time is approximately 1.1 )s for the output voltage undershooting case. The load regulation is of 2.77 )V/mA at load current of 100mA. Reference voltage is generated by using an accurate band gap reference circuit of 0.8V.The costly features of SOC such as total chip area and power consumption is drastically reduced by the use of only a total compensation capacitance of 6pF while consuming power consumption of 0.096 mW.

A Study of the Growth of Single-Phase Mg0.5Zn0.5O Films for UV LED

Single-phase, high band gap energy Zn0.5Mg0.5O films were grown under oxygen pressure, using pulse laser deposition with a Zn0.5Mg0.5O target. Structural characterization studies revealed that the crystal structures of the ZnX-1MgXO films could be controlled via changes in the oxygen pressure. TEM analysis showed that the thickness of the deposited Zn1-xMgxO thin films was 50–75 nm. As the oxygen pressure increased, we found that one axis of the crystals did not show a very significant increase in the crystallization compared with that observed at low oxygen pressure. The X-ray diffraction peak intensity for the hexagonal-ZnMgO (002) plane increased relative to that for the cubic-ZnMgO (111) plane. The corresponding c-axis of the h-ZnMgO lattice constant increased from 5.141 to 5.148 Å, and the a-axis of the c-ZnMgO lattice constant decreased from 4.255 to 4.250 Å. EDX analysis showed that the Mg content in the mixed-phase ZnMgO films decreased significantly, from 54.25 to 46.96 at.%. As the oxygen pressure was increased from 100 to 150 mTorr, the absorption edge red-shifted from 3.96 to 3.81 eV; however, a film grown at the highest oxygen pressure tested here (200 mTorr).

High Gain Mobile Base Station Antenna Using Curved Woodpile EBG Technique

This paper presents the gain improvement of a sector antenna for mobile phone base station by using the new technique to enhance its gain for microstrip antenna (MSA) array without construction enlargement. The curved woodpile Electromagnetic Band Gap (EBG) has been utilized to improve the gain instead. The advantages of this proposed antenna are reducing the length of MSAs array but providing the higher gain and easy fabrication and installation. Moreover, it provides a fan-shaped radiation pattern, wide in the horizontal direction and relatively narrow in the vertical direction, which appropriate for mobile phone base station. The paper also presents the design procedures of a 1x8 MSAs array associated with U-shaped reflector for decreasing their back and side lobes. The fabricated curved woodpile EBG exhibits bandgap characteristics at 2.1 GHz and is utilized for realizing a resonant cavity of MSAs array. This idea has been verified by both the Computer Simulation Technology (CST) software and experimental results. As the results, the fabricated proposed antenna achieves a high gain of 20.3 dB and the half-power beam widths in the E- and H-plane of 36.8 and 8.7 degrees, respectively. Good qualitative agreement between measured and simulated results of the proposed antenna was obtained.

Efficiency Improvement for Conventional Rectangular Horn Antenna by Using EBG Technique

The conventional rectangular horn has been used for microwave antenna a long time. Its gain can be increased by enlarging the construction of horn to flare exponentially. This paper presents a study of the shaped woodpile Electromagnetic Band Gap (EBG) to improve its gain for conventional horn without construction enlargement. The gain enhancement synthesis method for shaped woodpile EBG that has to transfer the electromagnetic fields from aperture of a horn antenna through woodpile EBG is presented by using the variety of shaped woodpile EBGs such as planar, triangular, quadratic, circular, gaussian, cosine, and squared cosine structures. The proposed technique has the advantages of low profile, low cost for fabrication and light weight. The antenna characteristics such as reflection coefficient (S11), radiation patterns and gain are simulated by utilized A Computer Simulation Technology (CST) software. With the proposed concept, an antenna prototype was fabricated and experimented. The S11 and radiation patterns obtained from measurements show a good impedance matching and a gain enhancement of the proposed antenna. The gain at dominant frequency of 10 GHz is 25.6 dB, application for X- and Ku-Band Radar, that higher than the gain of the basic rectangular horn antenna around 8 dB with adding only one appropriated EBG structures.

Design of a Dual Polarized Resonator Antenna for Mobile Communication System

This paper proposes the development and design of double layer metamaterials based on electromagnetic band gap (EBG) rods as a superstrate of a resonator antenna to enhance required antenna characteristics for the mobile base station. The metallic rod type metamaterial can partially reflect wave of a primary radiator. The antenna was designed and analyzed by a simulation result from CST Microwave Studio and designed technique could be confirmed by a measurement results from prototype antenna that agree with simulation results. The results indicate that the antenna can also generate a dual polarization by using a 45˚ oriented curved strip dipole located at the center of the reflector plane with double layer superstrate. It can be used to simplify the feed system of an antenna. The proposed antenna has a bandwidth covering the frequency range of 1920 – 2200 MHz, the gain of the antenna increases up to 14.06 dBi. In addition, an interesting sectoral 60˚ pattern is presented in horizontal plane.

Structural, Optical and Ferroelectric Properties of BaTiO3 Sintered at Different Temperatures

In this work, we have synthesized BaTiO3 via sol gel method by sintering at different temperatures (600, 700, 800, 900, 10000C) and studied their structural, optical and ferroelectric properties through X-ray diffraction (XRD), UV-Vis spectrophotometer and PE Loop Tracer. X-ray diffraction patterns of barium titanate samples show that the peaks of the diffractogram are successfully indexed with the tetragonal and cubic structure of BaTiO3. The Optical band gap calculated through UV Visible spectrophotometer varies from 4.37 to 3.80 eV for the samples sintered at 600 to 10000C, respectively. The particle size calculated through transmission electron microscopy varies from 20 to 40 nm for the samples sintered at 600 to 10000C, respectively. Moreover, it has been observed that the ferroelectricity increases as we increase the sintering temperature.

Design of One – Dimensional Tungsten Gratings for Thermophotovoltaic Emitters

In this paper, a one - dimensional microstructure tungsten grating (pyramids) is optimized for potential application as thermophotovoltaic (TPV) emitter. The influence of gratings geometric parameters on the spectral emittance are studied by using the rigorous coupled-wave analysis (RCWA).The results show that the spectral emittance is affected by the gratings geometrical parameters. The optimum parameters are grating period of 0.5µm, a filling ratio of 0.8 and grating height of h=0.2µm. A broad peak of high emittance is obtained at wavelengths between 0.5 and 1.8µm. The emittance drops below 0.2 at wavelengths above 1.8µm. This can be explained by the surface plasmon polaritons excitation coupled with the grating microstructures. At longer wavelengths, the emittance remains low and this is highly desired for thermophotovoltaic applications to reduce the thermal leakage due to low-energy photons that do not produce any photocurrent. The proposed structure can be used as a selective emitter for a narrow band gap cell such as GaSb. The performance of this simple 1-D emitter proved to be superior to that from more complicated structures. Almost all the radiation from the emitter incident, at angles up to 40°, on the cell, could be utilized to produce a photocurrent. There is no need for a filter.

Structural and Optical Properties ofInxAlyGa1-x-yN Quaternary Alloys

Quaternary InxAlyGa1-x-yN semiconductors have attracted much research interest because the use of this quaternary offer the great flexibility in tailoring their band gap profile while maintaining their lattice-matching and structural integrity. The structural and optical properties of InxAlyGa1-x-yN alloys grown by molecular beam epitaxy (MBE) is presented. The structural quality of InxAlyGa1-x-yN layers was characterized using high-resolution X-ray diffraction (HRXRD). The results confirm that the InxAlyGa1-x-yN films had wurtzite structure and without phase separation. As the In composition increases, the Bragg angle of the (0002) InxAlyGa1-x-yN peak gradually decreases, indicating the increase in the lattice constant c of the alloys. FWHM of (0002) InxAlyGa1-x-yN decreases with increasing In composition from 0 to 0.04, that could indicate the decrease of quality of the samples due to point defects leading to non-uniformity of the epilayers. UV-VIS spectroscopy have been used to study the energy band gap of InxAlyGa1-x-yN. As the indium (In) compositions increases, the energy band gap decreases. However, for InxAlyGa1-x-yN with In composition of 0.1, the band gap shows a sudden increase in energy. This is probably due to local alloy compositional fluctuations in the epilayer. The bowing parameter which appears also to be very sensitive on In content is investigated and obtained b = 50.08 for quaternary InxAlyGa1-x-yN alloys. From photoluminescence (PL) measurement, green luminescence (GL) appears at PL spectrum of InxAlyGa1-x-yN, emitted for all x at ~530 nm and it become more pronounced as the In composition (x) increased, which is believed cause by gallium vacancies and related to isolated native defects.

Analysis of Wave Propagation in Two-dimensional Phononic Crystals with Hollow Cylinders

Large full frequency band gaps of surface and bulk acoustic waves in two-dimensional phononic band structures with hollow cylinders are addressed in this paper. It is well-known that absolute frequency band gaps are difficultly obtained in a band structure consisted of low-acoustic-impedance cylinders in high-acoustic-impedance host materials such as PMMA/Ni band structures. Phononic band structures with hollow cylinders are analyzed and discussed to obtain large full frequency band gaps not only for bulk modes but also for surface modes. The tendency of absolute frequency band gaps of surface and bulk acoustic waves is also addressed by changing the inner radius of hollow cylinders in this paper. The technique and this kind of band structure are useful for tuning the frequency band gaps and the design of acoustic waveguides.

Optical and Structural Properties of a ZnS Buffer Layer Fabricated with Deposition Temperature of RF Magnetron Sputtering System

Optical properties of sputter-deposited ZnS thin films were investigated as potential replacements for CBD(chemical bath deposition) CdS buffer layers in the application of CIGS solar cells. ZnS thin films were fabricated on glass substrates at RT, 150oC, 200oC, and 250oC with 50 sccm Ar gas using an RF magnetron sputtering system. The crystal structure of the thin film is found to be zinc blende (cubic) structure. Lattice parameter of ZnS is slightly larger than CdS on the plane and thus better matched with that of CIGS. Within a 400-800 nm wavelength region, the average transmittance was larger than 75%. When the deposition temperature of the thin film was increased, the blue shift phenomenon was enhanced. Band gap energy of the ZnS thin film tended to increase as the deposition temperature increased. ZnS thin film is a promising material system for the CIGS buffer layer, in terms of ease of processing, low cost, environmental friendliness, higher transparency, and electrical properties

Structural and Optical Characterizations of CIGST Solar Cell Materials

Structural and UV/Visible optical properties can be useful to describe a material for the CIGS solar cell active layer, therefore, this work demonstrates the properties like surface morphology, X-ray Photoelectron Spectroscopy (XPS) bonding energy (EB) core level spectra, UV/Visible absorption spectra, refractive index (n), optical energy band (Eg), reflection spectra for the Cu25 (In16Ga9) Se40Te10 (CIGST-1) and Cu20 (In14Ga9) Se45Te12 (CIGST-2) chalcogenide compositions. Materials have been exhibited homogenous surface morphologies, broading /-or diffusion of bonding energy peaks relative elemental values and a high UV/Visible absorption tendency in the wave length range 400 nm- 850 nm range with the optical energy band gaps 1.37 and 1.42 respectively. Subsequently, UV/Visible reflectivity property in the wave length range 250 nm to 320 nm for these materials has also been discussed.

The Effect of a Graded Band Gap Window on the Performance of a Single Junction AlxGa1-xAs/GaAs Solar Cell

We have modeled the effect of a graded band gap window on the performance of a single junction AlxGa1-xAs/GaAs solar cell. First, we study the electrical characteristics of a single junction AlxGa1-xAs/GaAs solar cell, by employing an optimized structure for this solar cell, we show that grading the band gap of the window can increase the conversion efficiency of the solar cell by about 1.5%, and can also improve the quantum efficiency of the solar cell especially at shorter wavelengths.

The Influence of Doping of Fullerene Derivative (PCBM) on the Optical Properties of Vanadyl Phthalocyanine (VOPc)

This paper presents a spectroscopic study on doping of Vanadyl pathalocyanine (VOPc) by [6,6]-phenyl C61 butyric acid methyl ester (PCBM). The films are characterized by UV/Vis/NIR spectroscopy. A drastic increase in the absorption coefficient has been observed with increasing dopant concentration. Optical properties of VOPc:PCBM films deposited by spin coating technique were studied in detail. Optical band gap decreased with the PCBM incorporation in the VOPc film. Optical band gap calculated from the absorption spectra decreased from 3.32 eV to 3.26 eV with a variation of 0–75 % of PCBM concentration in the VOPC films.

Photonic Crystals for Novel Applications in Integrated-Optic Communication Systems and Devices

Photonic Crystal (PhC) based devices are being increasingly used in multifunctional, compact devices in integrated optical communication systems. They provide excellent controllability of light, yet maintaining the small size required for miniaturization. In this paper, the band gap properties of PhCs and their typical applications in optical waveguiding are considered. Novel PhC based applications such as nonlinear switching and tapers are considered and simulation results are shown using the accurate time-domain numerical method based on Finite Difference Time Domain (FDTD) scheme. The suitability of these devices for novel applications is discussed and evaluated.

STM Spectroscopy of Alloyed Nanocrystal Composite CdSxSe1-X

Nanocrystals (NC) alloyed composite CdSxSe1-x(x=0 to 1) have been prepared using the chemical solution deposition technique. The energy band gap of these alloyed nanocrystals of approximately the same size, have been determined by scanning tunneling spectroscopy (STS) technique at room temperature. The values of the energy band gap obtained directly using STS are compared to those measured by optical spectroscopy. Increasing the molar fraction ratio x from 0 to 1 causes clearly observed increase in the band gap of the alloyed composite nanocrystal. Vegard-s law was applied to calculate the parameters of the effective mass approximation (EMA) model and the dimension obtained were compared to the values measured by STM. The good agreement of the calculated and measured values is a direct result of applying Vegard's law in the nanocomposites.

Investigation on Metalosalen Complexes Binding to DNA using Ab Initio Calculations

Geometry optimizations of metal complexes of Salen(bis(Salicylidene)1,2-ethylenediamine) were carried out at HF and DFT methods employing Lanl2DZ basis set. In this work structural, energies, bond lengths and other physical properties between Mn2+,Cu2+ and Ni2+ ions coordinated by salen–type ligands are examined. All calculations were performed using Gaussian 98W program series. To investigate local aromaticities, NICS were calculated at all centers of rings. The higher the band gap indicating a higher global aromaticity. The possible binding energies have been evaluated. We have evaluated Frequencies and Zero-point energy with freq calculation. The NICS(Nucleous Independent Chemical Shift) Results show Ni(II) complexes are antiaromatic and aromaticites of Mn(II) complexes are larger than Cu(II) complexes. The energy Results show Cu(II) complexes are stability than Mn(II) and Ni(II) complexes.