Abstract: A group of Stellite alloys are studied in consideration
of temperature effects on their hardness and wear resistance. The
hardness test is conducted on a micro-hardness tester with a hot stage
equipped that allows heating the specimen up to 650°C. The wear
resistance of each alloy is evaluated using a pin-on-disc tribometer
with a heating furnace built-in that provides the temperature capacity
up to 450°C. The experimental results demonstrate that the hardness
and wear resistance of Stellite alloys behave differently at room
temperature and at high temperatures. The wear resistance of Stellite
alloys at room temperature mainly depends on their carbon content and
also influenced by the tungsten content in the alloys. However, at high
temperatures the wear mechanisms of Stellite alloys become more
complex, involving multiple factors. The relationships between
chemical composition, microstructure, hardness and wear resistance of
these alloys are studied, with focus on temperature effect on these
relations.
Abstract: The threshold voltage and capacitance voltage characteristics of ultra-thin Silicon-on-Insulator MOSFET are greatly influenced by the thickness and doping concentration of the silicon film. In this work, the capacitance voltage characteristics and threshold voltage of the device have been analyzed with quantum mechanical effects using the Self-Consistent model. Reduction of channel thickness and adding doping impurities cause an increase in the threshold voltage. Moreover, the temperature effects cause a significant amount of threshold voltage shift. The temperature dependence of threshold voltage has also been observed with Self- Consistent approach which are well supported from experimental performance of practical devices.
Abstract: Nowadays, quasi-continuous wave diode lasers are
used in a widespread variety of applications. Temperature effects in
these lasers can strongly influence their performance. In this paper,
the effects of temperature have been experimentally investigated on
different features of a 60W-QCW diode laser. The obtained results
indicate that the conversion efficiency and operation voltage of diode
laser decrease with the augmentation of the working temperature
associated with a redshift in the laser peak wavelength. Experimental
results show the emission peak wavelength of laser shifts 0.26 nm
and the conversion efficiency decreases 1.76 % with the increase of
temperature from 40 to 50 ̊C. Present study also shows the slope
efficiency decreases gradually at low temperatures and rapidly at
higher temperatures. Regarding the close dependence of the
mentioned parameters to the operating temperature, it is of great
importance to carefully control the working temperature of diode
laser, particularly for medical applications.
Abstract: An organic bulk heterojunction (BHJ) was fabricated using a blended film containing Copper (II) tetrakis(4-acumylphenoxy) phthalocyanine (Tc-CuPc) along with [6,6]-Phenyl C61 butyric acid methyl ester (PCBM). Weight ratio between Tc-CuPc and PCBM was 1:1. The electrical properties of Tc-CuPc: PCBM BHJ were examined. Rectifying nature of the BHJ was displayed by current-voltage (I-V) curves, recorded in dark and at various temperatures. At low voltages, conduction was ohmic succeeded by space-charge limiting current (SCLC) conduction at higher voltages in which exponential trap distribution was dominant. Series resistance, shunt resistance, ideality factor, effective barrier height and mobility at room temperature were found to be 526 4, 482 k4, 3.7, 0.17 eV and 2×10-7 cm2V-1s-1 respectively. Temperature effect towards different BHJ parameters was observed under dark condition.