Abstract: The contact resistance between source/drain electrodes
and semiconductor layer is an important parameter affecting electron
transporting performance in the thin film transistor (TFT). In this
work, we introduced a transparent and the solution prossable
single-walled carbon nanotube (SWCNT)/Al-doped ZnO nano particle
(AZO NP) bilayer electrodes showing low contact resistance with
indium-oxide (In2O3) sol gel thin film. By inserting low work function
AZO NPs into the interface between the SWCNTs and the In2O3 which
has a high energy barrier, we could obtain an electrical Ohmic contact
between them. Finally, with the SWCNT-AZO NP bilayer electrodes,
we successfully fabricated a TFT showing a field effect mobility of
5.38 cm2/V·s at 250°C.
Abstract: The electrical and structural properties of Hf/Al/Ni/Au
(20/100/25/50 nm) ohmic contact to n-GaN are reported in this study.
Specific contact resistivities of Hf/Al/Ni/Au based contacts have been
investigated as a function of annealing temperature and achieve the
lowest value of 1.09´10-6 Ω·cm2 after annealing at 650 oC in vacuum.
A detailed mechanism of ohmic contact formation is discussed. By
using different chemical analyses, it is anticipated that the formation of
Hf-Al-N alloy might be responsible to form low temperature ohmic
contacts for the Hf-based scheme to n-GaN.