Applying Wavelet Transform to Ferroresonance Detection and Protection

Non-synchronous breakage or line failure in power systems with light or no loads can lead to core saturation in transformers or potential transformers. This can cause component and capacitance matching resulting in the formation of resonant circuits, which trigger ferroresonance. This study employed a wavelet transform for the detection of ferroresonance. Simulation results demonstrate the efficacy of the proposed method.

Internal Node Stabilization for Voltage Sense Amplifiers in Multi-Channel Systems

This paper discusses the undesirable charge transfer by the parasitic capacitances of the input transistors in a voltage sense amplifier. Due to its intrinsic rail-to-rail voltage transition, the input sides are inevitably disturbed. It can possible disturb the stabilities of the reference voltage levels. Moreover, it becomes serious in multi-channel systems by altering them for other channels, and so degrades the linearity of the systems. In order to alleviate the internal node voltage transition, the internal node stabilization technique is proposed by utilizing an additional biasing circuit. It achieves 47% and 43% improvements for node stabilization and input referred disturbance, respectively.

A Semi-Cylindrical Capacitive Sensor Used for Soil Moisture Measurement

Differing from the structure of traditional parallel plate capacitive sensor a semi cylindrical capacitive sensor has been introduced in this present work to measure the soil moisture conveniently. Here, the numerical analysis method to evaluate the capacitance from the semi-cylindrical capacitive sensor is analyzed and discussed. The changes of capacitance with the variation of soil moisture obtained linear in the nano farad range (nF) and which converted into voltage variation by using proper signal conditioning circuit. Experimental results depict the satisfactory performance of the sensor for measurement of soil moisture in the range of 0 to 70%. We investigated the linearity of 4% of FSO and sensitivity of 70 mV/unit percentage changes in soil moisture level (DB).

Low Value Capacitance Measurement System with Adjustable Lead Capacitance Compensation

The present paper describes the development of a low cost, highly accurate low capacitance measurement system that can be used over a range of 0 – 400 pF with a resolution of 1 pF. The range of capacitance may be easily altered by a simple resistance or capacitance variation of the measurement circuit. This capacitance measurement system uses quad two-input NAND Schmitt trigger circuit CD4093B with hysteresis for the measurement and this system is integrated with PIC 18F2550 microcontroller for data acquisition purpose. The microcontroller interacts with software developed in the PC end through USB architecture and an attractive graphical user interface (GUI) based system is developed in the PC end to provide the user with real time, online display of capacitance under measurement. The system uses a differential mode of capacitance measurement, with reference to a trimmer capacitance, that effectively compensates lead capacitances, a notorious error encountered in usual low capacitance measurements. The hysteresis provided in the Schmitt-trigger circuits enable reliable operation of the system by greatly minimizing the possibility of false triggering because of stray interferences, usually regarded as another source of significant error. The real life testing of the proposed system showed that our measurements could produce highly accurate capacitance measurements, when compared to cutting edge, high end digital capacitance meters.

Effect of Field Dielectric Material on Performance of InGaAs Power LDMOSFET

In this paper, a power laterally-diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET) on In0.53Ga0.47As is presented. The device utilizes a thicker field-oxide with low dielectric constant under the field-plate in order to achieve possible reduction in device capacitances and reduced-surface-field effect. Using 2D numerical simulations, performance of the proposed device is analyzed and compared with that of the conventional LDMOSFET. The proposed structure provides 50% increase in the breakdown voltage, 21% increase in transit frequency, and 72% improvement in figure-of-merit over the conventional device for same cell pitch.

Low Power Capacitance-to-Voltage Converter for Magnetometer Interface IC

This paper presents the design and implementation of a fully integrated Capacitance-to-Voltage Converter (CVC) as the analog front-end for magnetometer interface IC. The application demands very low power solution operating in the frequency of around 20 KHz. The design adapts low power architecture to create low noise electronic interface for Capacitive Micro-machined Lorentz force magnetometer sensor. Using a 0.18-μm CMOS process, simulation results of this interface IC show that the proposed CVC can provide 33 dB closed loop gain, 20 nV/√Hz input referred noise at 20 KHz, while consuming 65 μA current from 1.8-V supply. 

Accuracy of Displacement Estimation and Selection of Capacitors for a Four Degrees of Freedom Capacitive Force Sensor

Force sensor has been used as requisite for knowing information on the amount and the directions of forces on the skin surface. We have developed a four-degrees-of-freedom capacitive force sensor (approximately 20×20×5 mm3) that has a flexible structure and sixteen parallel plate capacitors. An iterative algorithm was developed for estimating four displacements from the sixteen capacitances using fourth-order polynomial approximation of characteristics between capacitance and displacement. The estimation results from measured capacitances had large error caused by deterioration of the characteristics. In this study, effective capacitors had major information were selected on the basis of the capacitance change range and the characteristic shape. Maximum errors in calibration and non-calibration points were 25%and 6.8%.However the maximum error was larger than desired value, the smallness of averaged value indicated the occurrence of a few large error points. On the other hand, error in non-calibration point was within desired value.  

Resonant-Based Capacitive Pressure Sensor Read-Out Oscillating at 1.67 GHz in 0.18

This paper presents a resonant-based read-out circuit for capacitive pressure sensors. The proposed read-out circuit consists of an LC oscillator and a counter. The circuit detects the capacitance changes of a capacitive pressure sensor by means of frequency shifts from its nominal operation frequency. The proposed circuit is designed in 0.18m CMOS with an estimated power consumption of 43.1mW. Simulation results show that the circuit has a capacitive resolution of 8.06kHz/fF, which enables it for high resolution pressure detection.

Slugging Frequency Correlation for Inclined Gas-liquid Flow

In this work, new experimental data for slugging frequency in inclined gas-liquid flow are reported, and a new correlation is proposed. Scale experiments were carried out using a mixture of air and water in a 6 m long pipe. Two different pipe diameters were used, namely, 38 and 67 mm. The data were taken with capacitance type sensors at a data acquisition frequency of 200 Hz over an interval of 60 seconds. For the range of flow conditions studied, the liquid superficial velocity is observed to influence the frequency strongly. A comparison of the present data with correlations available in the literature reveals a lack of agreement. A new correlation for slug frequency has been proposed for the inclined flow, which represents the main contribution of this work.

Error Analysis of Nonconventional Electrical Moisture-meter under Simplified Conditions

An electrical apparatus for measuring moisture content was developed by our laboratory and uses dependence of electrical properties on water content in studied material. Error analysis of the apparatus was run by measuring different volumes of water in a simplified specimen, i.e. hollow plexiglass block, in order to avoid as many side-effects as possible. Obtained data were processed using both basic and advanced statistics and results were compared with each other. The influence of water content on accuracy of measured data was studied as well as the influence of variation of apparatus' proper arrangement or factual methodics of its usage. The overall coefficient of variation was 4%. There was no trend found in results of error dependence on water content. Comparison with current surveys led to a conclusion, that the studied apparatus can be used for indirect measurement of water content in porous materials, with expectable error and under known conditions. Factual experiments with porous materials are not involved, but are currently under investigation.

Analysis of SEIG for a Wind Pumping Plant Using Induction Motor

In contrast to conventional generators, self-excited induction generators are found to be most suitable machines for wind energy conversion in remote and windy areas due to many advantages over grid connected machines. This papers presents a Self-Excited Induction Generator (SEIG) driven by wind turbine and supplying an induction motor which is coupled to a centrifugal pump. A method to describe the steady state performance based on nodal analysis is presented. Therefore the advanced knowledge of the minimum excitation capacitor value is required. The effects of variation of excitation capacitance on system and rotor speed under different loading conditions have been analyzed and considered to optimize induction motor pump performances.

Artificial Voltage-Controlled Capacitance and Inductance using Voltage-Controlled Transconductance

In this paper, a technique is proposed to implement an artificial voltage-controlled capacitance or inductance which can replace the well-known varactor diode in many applications. The technique is based on injecting the current of a voltage-controlled current source onto a fixed capacitor or inductor. Then, by controlling the transconductance of the current source by an external bias voltage, a voltage-controlled capacitive or inductive reactance is obtained. The proposed voltage-controlled reactance devices can be designed to work anywhere in the frequency spectrum. Practical circuits for the proposed voltage-controlled reactances are suggested and simulated.

Doping Profile Measurement and Characterization by Scanning Capacitance Microscope for PocketImplanted Nano Scale n-MOSFET

This paper presents the doping profile measurement and characterization technique for the pocket implanted nano scale n-MOSFET. Scanning capacitance microscopy and atomic force microscopy have been used to image the extent of lateral dopant diffusion in MOS structures. The data are capacitance vs. voltage measurements made on a nano scale device. The technique is nondestructive when imaging uncleaved samples. Experimental data from the published literature are presented here on actual, cleaved device structures which clearly indicate the two-dimensional dopant profile in terms of a spatially varying modulated capacitance signal. Firstorder deconvolution indicates the technique has much promise for the quantitative characterization of lateral dopant profiles. The pocket profile is modeled assuming the linear pocket profiles at the source and drain edges. From the model, the effective doping concentration is found to use in modeling and simulation results of the various parameters of the pocket implanted nano scale n-MOSFET. The potential of the technique to characterize important device related phenomena on a local scale is also discussed.

Influence of Paralleled Capacitance Effect in Well-defined Multiple Value Logical Level System with Active Load

Three similar negative differential resistance (NDR) profiles with both high peak to valley current density ratio (PVCDR) value and high peak current density (PCD) value in unity resonant tunneling electronic circuit (RTEC) element is developed in this paper. The PCD values and valley current density (VCD) values of the three NDR curves are all about 3.5 A and 0.8 A, respectively. All PV values of NDR curves are 0.40 V, 0.82 V, and 1.35 V, respectively. The VV values are 0.61 V, 1.07 V, and 1.69 V, respectively. All PVCDR values reach about 4.4 in three NDR curves. The PCD value of 3.5 A in triple PVCDR RTEC element is better than other resonant tunneling devices (RTD) elements. The high PVCDR value is concluded the lower VCD value about 0.8 A. The low VCD value is achieved by suitable selection of resistors in triple PVCDR RTEC element. The low PV value less than 1.35 V possesses low power dispersion in triple PVCDR RTEC element. The designed multiple value logical level (MVLL) system using triple PVCDR RTEC element provides equidistant logical level. The logical levels of MVLL system are about 0.2 V, 0.8 V, 1.5 V, and 2.2 V from low voltage to high voltage and then 2.2 V, 1.3 V, 0.8 V, and 0.2 V from high voltage back to low voltage in half cycle of sinusoid wave. The output level of four levels MVLL system is represented in 0.3 V, 1.1 V, 1.7 V, and 2.6 V, which satisfies the NMP condition of traditional two-bit system. The remarkable logical characteristic of improved MVLL system with paralleled capacitor are with four significant stable logical levels about 220 mV, 223 mV, 228 mV, and 230 mV. The stability and articulation of logical levels of improved MVLL system are outstanding. The average holding time of improved MVLL system is approximately 0.14 μs. The holding time of improved MVLL system is fourfold than of basic MVLL system. The function of additional capacitor in the improved MVLL system is successfully discovered.

Development of a Spark Electrode Ignition System for an Explosion Vessel

This paper presents development of an ignition system using spark electrodes for application in a research explosion vessel. A single spark is aimed to be discharged with quantifiable ignition energy. The spark electrode system would enable study of flame propagation, ignitability of fuel-air mixtures and other fundamental characteristics of flames. The principle of the capacitive spark circuit of ASTM is studied to charge an appropriate capacitance connected across the spark gap through a large resistor by a high voltage from the source of power supply until the initiation of spark. Different spark energies could be obtained mainly by varying the value of the capacitance and the supply current. The spark sizes produced are found to be affected by the spark gap, electrode size, input voltage and capacitance value.

Low Power Low Voltage Current Mode Pipelined A/D Converters

This paper presents two prototypes of low power low voltage current mode 9 bit pipelined a/d converters. The first and the second converters are configured of 1.5 bit and 2.5 bit stages, respectively. The a/d converter structures are composed of current mode building blocks and final comparator block which converts the analog current signal into digital voltage signal. All building blocks have been designed in CMOS AMS 0.35μm technology, then simulated to verify proposed concept. The performances of both converters are compared to performances of known current mode and voltage mode switched capacitance converter structures. Low power consumption and small chip area are advantages of the proposed converters.

Theory of Nanowire Radial p-n-Junction

We have developed an analytic model for the radial pn-junction in a nanowire (NW) core-shell structure utilizing as a new building block in different semiconductor devices. The potential distribution through the p-n-junction is calculated and the analytical expressions are derived to compute the depletion region widths. We show that the widths of space charge layers, surrounding the core, are the functions of core radius, which is the manifestation of so called classical size effect. The relationship between the depletion layer width and the built-in potential in the asymptotes of infinitely large core radius transforms to square-root dependence specific for conventional planar p-n-junctions. The explicit equation is derived to compute the capacitance of radial p-n-junction. The current-voltage behavior is also carefully determined taking into account the “short base" effects.

Self Compensating ON Chip LDO Voltage Regulator in 180nm

An on chip low drop out voltage regulator that employs elegant compensation scheme is presented in this paper. The novelty in this design is that the device parasitic capacitances are exploited for compensation at different loads. The proposed LDO is designed to provide a constant voltage of 1.2V and is implemented in UMC 180 nano meter CMOS technology. The voltage regulator presented improves stability even at lighter loads and enhances line and load regulation.

High Temperature Hydrogen Sensors Based On Pd/Ta2O5/SiC MOS Capacitor

There are a many of needs for the development of SiC-based hydrogen sensor for harsh environment applications. We fabricated and investigated Pd/Ta2O5/SiC-based hydrogen sensors with MOS capacitor structure for high temperature process monitoring and leak detection applications in such automotive, chemical and petroleum industries as well as direct monitoring of combustion processes. In this work, we used silicon carbide (SiC) as a substrate to replace silicon which operating temperatures are limited to below 200°C. Tantalum oxide was investigated as dielectric layer which has high permeability for hydrogen gas and high dielectric permittivity, compared with silicon dioxide or silicon nitride. Then, electrical response properties, such as I-V curve and dependence of capacitance on hydrogen concentrations were analyzed in the temperature ranges of room temperature to 500°C for performance evaluation of the sensor.

A High-Speed and Low-Energy Ternary Content Addressable Memory Design Using Feedback in Match-Line Sense Amplifier

In this paper we present an energy efficient match-line (ML) sensing scheme for high-speed ternary content-addressable memory (TCAM). The proposed scheme isolates the sensing unit of the sense amplifier from the large and variable ML capacitance. It employs feedback in the sense amplifier to successfully detect a match while keeping the ML voltage swing low. This reduced voltage swing results in large energy saving. Simulation performed using 130nm 1.2V CMOS logic shows at least 30% total energy saving in our scheme compared to popular current race (CR) scheme for similar search speed. In terms of speed, dynamic energy, peak power consumption and transistor count our scheme also shows better performance than mismatch-dependant (MD) power allocation technique which also employs feedback in the sense amplifier. Additionally, the implementation of our scheme is simpler than CR or MD scheme because of absence of analog control voltage and programmable delay circuit as have been used in those schemes.