Abstract: We investigated magneto-optical Kerr effect in transparent region of implanted ferrite-garnet films for the (YBiCa)3(FeGe)5O12. The implantation process was carried out at room temperature by Ne+ ions with energy of 100 KeV and with various doses (0.5-2.5) 1014 ion/cm2. We discovered that slight deviation of the plane of external alternating magnetic field from plane of sample leads to appearance intensive magneto-optical maximum in transparent region of garnet films ħω=0.5-2.0 eV. In the proceeding, we have also found that the deviation of polarization plane from P- component of incident light leads to the appearance of the similar magneto-optical effects in this region. The research of magnetization processes in transparent region of garnet films showed that the formation of magneto-optical effects in region ħω=0.5-2.3 eV has a rather complex character.
Abstract: Ellipsometry is an optical method based on the study of the behavior of polarized light. The light reflected on a surface induces a change in the polarization state which depends on the characteristics of the material (complex refractive index and thickness of the different layers constituting the device). The purpose of this work is to determine the optical properties of semiconductor thin films by ellipsometry. This paper describes the experimental aspects concerning the semiconductor samples, the SE400 ellipsometer principle, and the results obtained by direct measurements of ellipsometric parameters and modelling using appropriate software.
Abstract: This study fabricates p-type Ni1−xO:Li/n-Si heterojunction solar cells (P+/n HJSCs) by using radio frequency (RF) magnetron sputtering and investigates the effect of substrate temperature on photovoltaic cell properties. Grazing incidence x-ray diffraction, four point probe, and ultraviolet-visible-near infrared discover the optoelectrical properties of p-Ni1-xO thin films. The results show that p-Ni1-xO thin films deposited at 300 oC has the highest grain size (22.4 nm), average visible transmittance (~42%), and electrical resistivity (2.7 Ωcm). However, the conversion efficiency of cell is shown only 2.33% which is lower than the cell (3.39%) fabricated at room temperature. This result can be mainly attributed to interfacial layer thickness (SiOx) reduces from 2.35 nm to 1.70 nm, as verified by high-resolution transmission electron microscopy.
Abstract: The substrate heater designed for this investigation is a front side substrate heating system. It consists of 10 conventional tungsten halogen lamps and an aluminum reflector, total input electrical power of 5 kW. The substrate is heated by means of a radiation from conventional tungsten halogen lamps directed to the substrate through a glass window. This design allows easy replacement of the lamps and maintenance of the system. Within 2 to 6 minutes the substrate temperature reaches 500 to 830 C by varying the vertical distance between the glass window and the substrate holder. Moreover, the substrate temperature can be easily controlled by controlling the input power to the system. This design gives excellent opportunity to deposit many deferent films at deferent temperatures in the same deposition time. This substrate heater was successfully used for Chemical Vapor Deposition (CVD) of many thin films, such as Silicon, iron, etc.
Abstract: ZnO-SnO2 i.e. Zinc-Tin-Oxide (ZTO) thin films were
deposited on glass substrate with varying concentrations (ZnO:SnO2
- 100:0, 90:10, 70:30 and 50:50 wt.%) at room temperature by flash
evaporation technique. These deposited ZTO film were annealed at
450 0C in vacuum. These films were characterized to study the effect
of annealing on the structural, electrical, and optical properties.
Atomic force microscopy (AFM) and Scanning electron microscopy
(SEM) images manifest the surface morphology of these ZTO thin
films. The apparent growth of surface features revealed the formation
of nanostructure ZTO thin films. The small value of surface
roughness (root mean square RRMS) ensures the usefulness in
optical coatings. The sheet resistance was also found to be decreased
for both types of films with increasing concentration of SnO2. The
optical transmittance found to be decreased however blue shift has
been observed after annealing.
Abstract: Resistive switching of aluminum nitride (AlNx) thin film was demonstrated in a TaN/AlNx/TiN memory cell that was prepared by sputter deposition techniques. The memory cell showed bipolar switching of resistance between +3.5 V and –3.5 V. The resistance ratio of high resistance state (HRS) to low resistance state (HRS), RHRS/RLRS, was about 2 over 100 cycles of endurance test. Both the LRS and HRS of the memory cell exhibited ohmic conduction at low voltages and Poole-Frenkel emission at high voltages. The electrical conduction in the TaN/AlNx/TiN memory cell was possibly attributed to the interactions between charges and defects in the AlNx film.
Abstract: Tungsten trioxide has been prepared by using P-PTA
as a precursor on alumina substrates by spin coating method.
Palladium introduced on WO3 film via electrolysis deposition by
using palladium chloride as catalytic precursor. The catalytic
precursor was introduced on the series of films with different
morphologies. X-ray diffractometry (XRD), Scanning electron
microscopy (SEM) and XPS were applied to analyze structure and
morphology of the fabricated thin films. Then we measured variation
of samples- electrical conductivity of pure and Pd added films in air
and diluted hydrogen. Addition of Pd resulted in a remarkable
improvement of the hydrogen sensing properties of WO3 by detection
of Hydrogen below 1% at room temperature. Also variation of the
electrical conductivity in the presence of diluted hydrogen revealed
that response of samples depends rather strongly on the palladium
configuration on the surface.