Abstract: The technical realization of data transmission using
glass fiber began after the development of diode laser in year 1962.
The erbium doped fiber amplifiers (EDFA's) in high speed networks
allow information to be transmitted over longer distances without
using of signal amplification repeaters. These kinds of fibers are
doped with erbium atoms which have energy levels in its atomic
structure for amplifying light at 1550nm. When a carried signal wave
at 1550nm enters the erbium fiber, the light stimulates the excited
erbium atoms which pumped with laser beam at 980nm as additional
light. The wavelength and intensity of the semiconductor lasers
depend on the temperature of active zone and the injection current.
The present paper shows the effect of the diode lasers temperature
and injection current on the optical amplification. From the results of
in- and output power one may calculate the max. optical gain by
erbium doped fiber amplifier.