Abstract: The principle of all-silicon Raman lasers for an
output wavelength of 1.3 μm is presented, which employs
quasi-phase-matched structures and resonators to enhance the output
power. 1.3-μm laser beams for GE-PONs in FTTH systems generated
from a silicon device are very important because such a silicon device
can be monolithically integrated with the silicon planar lightwave
circuits (Si PLCs) used in the GE-PONs. This reduces the device
fabrication processes and time and also optical losses at the junctions
between optical waveguides of the Si PLCs and Si laser devices
when compared with 1.3-μm III-V semiconductor lasers set on the
Si PLCs employed at present. We show that the quasi-phase-matched
Si Raman laser with resonators can produce about 174 times larger
laser power at 1.3 μm (at maximum) than that without resonators
for a Si waveguide of Raman gain 20 cm/GW and optical loss 1.2
dB/cm, pumped at power 10 mW, where the length of the waveguide
is 3 mm and its cross-section is (1.5 μm)2.