Abstract: The present work is motivated by the idea that the
layer deformation in anisotropic elasticity can be estimated from the
theory of interfacial dislocations. In effect, this work which is an
extension of a previous approach given by one of the authors
determines the anisotropic displacement fields and the critical
thickness due to a complex biperiodic network of MDs lying just
below the free surface in view of the arrangement of dislocations.
The elastic fields of such arrangements observed along interfaces
play a crucial part in the improvement of the physical properties of
epitaxial systems. New results are proposed in anisotropic elasticity
for hexagonal networks of MDs which contain intrinsic and extrinsic
stacking faults. We developed, using a previous approach based on
the relative interfacial displacement and a Fourier series formulation
of the displacement fields, the expressions of elastic fields when
there is a possible dissociation of MDs. The numerical investigations
in the case of the observed system Si/(111)Si with low twist angles
show clearly the effect of the anisotropy and thickness when the
misfit networks are dissociated.