Abstract: The use of nanostructured semiconducting material to catalyze degradation of environmental pollutants still receives much attention to date. One of the desired characteristics for pollutant degradation under ultra-violet visible light is the materials with extended carrier charge separation that allows for electronic transfer between the catalyst and the pollutants. In this work, zinc oxide n-type semiconductor vertically aligned structures were fabricated on silicon (100) substrates using the chemical bath deposition method. The as-synthesized structures were treated with nickel and sulphur. X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy were used to characterize the phase purity, structural dimensions and elemental composition of the obtained structures respectively. Photoluminescence emission measurements showed a decrease in both the near band edge emission as well as the defect band emission upon addition of nickel and sulphur with different concentrations. This was attributed to increased charger-carrier-separation due to the presence of Ni-S material on ZnO surface, which is linked to improved charge transfer during photocatalytic reactions.
Abstract: Well-defined 2D Eu+3 co-doped ZrO2: Gd+3 nanoparticles were successfully synthesized by microwave assisted solution combustion technique for luminescent applications. The present investigation reports the rapid and effective method for the synthesis of the Eu+3 co-doped ZrO2:Gd+3 nanoparticles and study of the luminescence behavior of Eu+3 ion in ZrO2:Gd+3 nanostructures. The optical properties of the prepared nanostructures were investigated by using UV-visible spectroscopy and photoluminescence spectra. The phase formation and the morphology of the nanoplatelets were studied by XRD, FESEM and HRTEM. The average grain size was found to be 45-50 nm. The presence of Gd3+ ion increases the crystallinity of the material and hence acts as a good nucleating agent. The ZrO2:Gd3+ co-doped with Eu+3 nanoplatelets gives an emission at 607 nm, a strong red emission under the excitation wavelength of 255 nm.
Abstract: A thin gold metal layer was deposited on the top of
silicon oxide films containing embedded Si nanocrystals (Si-nc). The
sample was annealed in a gas containing nitrogen, and subsequently
characterized by photoluminescence. We obtained 3-fold
enhancement of photon emission from the Si-nc embedded in silicon
dioxide covered with a Gold layer as compared with an uncovered
sample. We attribute this enhancement to the increase of the
spontaneous emission rate caused by the coupling of the Si-nc
emitters with the surface plasmons (SP). The evolution of PL
emission with laser irradiated time was also collected from covered
samples, and compared to that from uncovered samples. In an
uncovered sample, the PL intensity decreases with time,
approximately with two decay constants. Although the decrease of
the initial PL intensity associated with the increase of sample
temperature under CW pumping is still observed in samples covered
with a gold layer, this film significantly contributes to reduce the
permanent deterioration of the PL intensity. The resistance to
degradation of light-emitting silicon nanocrystals can be increased by
SP coupling to suppress the permanent deterioration. Controlling the
permanent photodeterioration can allow to perform a reliable optical
gain measurement.
Abstract: The photoluminescence (PL) at 1.55 μm from
semiconducting β-FeSi2 has attracted a noticeable interest for
silicon-based optoelectronic applications. Moreover, its high optical
absorption coefficient (higher than 105 cm-1 above 1.0 eV) allows this
semiconducting material to be used as photovoltanics devices.
A clear PL spectrum for β-FeSi2 was observed by Cu or Au coating
on Si(001). High-crystal-quality β-FeSi2 with a low-level nonradiative
center was formed on a Cu- or Au- reated Si layer. This method of
deposition can be applied to other materials requiring high crystal
quality.