Abstract: This paper focuses on the analysis of Nanoptenna for extreme fast communication. The Nanoptenna is basically a nano antenna designed for communication at optical range of frequencies. Since, this range of frequencies includes the visible spectrum of the light, so there is a high possibility of the data transfer at high rates and extreme fast communication (XFC). The shape chosen for the analysis is a bow tie structure due to its various characteristics of electric field enhancement.
Abstract: In this work we numerically examine structures which
could confine light in nanometer areas. A system consisting of two silicon disks with in plane separation of a few tens of nanometers has
been studied first. The normalized unitless effective mode volume, Veff, has been calculated for the two lowest whispering gallery mode resonances. The effective mode volume is reduced significantly as the gap between the disks decreases. In addition, the effect of the substrate is also studied. In that case, Veff of approximately the same
value as the non-substrate case for a similar two disk system can be
obtained by using disks almost twice as thick. We also numerically examine a structure consisting of a circular slot waveguide which is formed into a silicon disk resonator. We show that the proposed structure could have high Q resonances thus raising the belief that it
is a very promising candidate for optical interconnects applications.
The study includes several numerical calculations for all the geometric parameters of the structure. It also includes numerical simulations of the coupling between a waveguide and the proposed
disk resonator leading to a very promising conclusion about its applicability.
Abstract: We report a lithography-free approach to fabricate the
biomimetics, quasi-beehive Si nanostructures (QBSNs), on
Si-substrates. The self-assembled SiGe nanoislands via the strain
induced surface roughening (Asaro-Tiller-Grinfeld instability) during
in-situ annealing play a key role as patterned sacrifice regions for
subsequent reactive ion etching (RIE) process performed for
fabricating quasi-beehive nanostructures on Si-substrates. As the
measurements of field emission, the bare QBSNs show poor field
emission performance, resulted from the existence of the native oxide
layer which forms an insurmountable barrier for electron emission. In
order to dramatically improve the field emission characteristics, the
platinum nanopillars (Pt-NPs) were deposited on QBSNs to form
Pt-NPs/QBSNs heterostructures. The turn-on field of Pt-NPs/QBSNs
is as low as 2.29 V/μm (corresponding current density of 1 μA/cm2),
and the field enhancement factor (β-value) is significantly increased to
6067. More importantly, the uniform and continuous electrons excite
light emission, due to the surrounding filed emitters from
Pt-NPs/QBSNs, can be easily obtained. This approach does not require
an expensive photolithographic process and possesses great potential
for applications.