Abstract: A device analysis of the photoconductive
semiconductor switch is carried out to investigate distribution of
electric field and carrier concentrations as well as the current density
distribution. The operation of this device was then investigated as a
switch operating in X band. It is shown that despite the presence of
symmetry geometry, switch current density of the on-state steady
state mode is distributed asymmetrically throughout the device.
Abstract: This paper presents the study of hardness profile of spur gear heated by induction heating process in function of the machine parameters, such as the power (kW), the heating time (s) and the generator frequency (kHz). The global work is realized by 3D finite-element simulation applied to the process by coupling and resolving the electromagnetic field and the heat transfer problems, and it was performed in three distinguished steps. First, a Comsol 3D model was built using an adequate formulation and taking into account the material properties and the machine parameters. Second, the convergence study was conducted to optimize the mesh. Then, the surface temperatures and the case depths were deeply analyzed in function of the initial current density and the heating time in medium frequency (MF) and high frequency (HF) heating modes and the edge effect were studied. Finally, the simulations results are validated using experimental tests.
Abstract: We report the size dependence of 1D superconductivity in ultrathin (10-130 nm) nanowires produced by coating suspended carbon nanotubes with a superconducting NbN thin film. The resistance-temperature characteristic curves for samples with ≧25 nm wire width show the superconducting transition. On the other hand, for the samples with 10-nm width, the superconducting transition is not exhibited owing to the quantum size effect. The differential resistance vs. current density characteristic curves show some peak, indicating that Josephson junctions are formed in nanowires. The presence of the Josephson junctions is well explained by the measurement of the magnetic field dependence of the critical current. These understanding allow for the further expansion of the potential application of NbN, which is utilized for single photon detectors and so on.
Abstract: We report a lithography-free approach to fabricate the
biomimetics, quasi-beehive Si nanostructures (QBSNs), on
Si-substrates. The self-assembled SiGe nanoislands via the strain
induced surface roughening (Asaro-Tiller-Grinfeld instability) during
in-situ annealing play a key role as patterned sacrifice regions for
subsequent reactive ion etching (RIE) process performed for
fabricating quasi-beehive nanostructures on Si-substrates. As the
measurements of field emission, the bare QBSNs show poor field
emission performance, resulted from the existence of the native oxide
layer which forms an insurmountable barrier for electron emission. In
order to dramatically improve the field emission characteristics, the
platinum nanopillars (Pt-NPs) were deposited on QBSNs to form
Pt-NPs/QBSNs heterostructures. The turn-on field of Pt-NPs/QBSNs
is as low as 2.29 V/μm (corresponding current density of 1 μA/cm2),
and the field enhancement factor (β-value) is significantly increased to
6067. More importantly, the uniform and continuous electrons excite
light emission, due to the surrounding filed emitters from
Pt-NPs/QBSNs, can be easily obtained. This approach does not require
an expensive photolithographic process and possesses great potential
for applications.